JPS5663899A - Growing method of artificial rock crystal - Google Patents

Growing method of artificial rock crystal

Info

Publication number
JPS5663899A
JPS5663899A JP14007079A JP14007079A JPS5663899A JP S5663899 A JPS5663899 A JP S5663899A JP 14007079 A JP14007079 A JP 14007079A JP 14007079 A JP14007079 A JP 14007079A JP S5663899 A JPS5663899 A JP S5663899A
Authority
JP
Japan
Prior art keywords
temp
growing
crystal
rock crystal
artificial rock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14007079A
Other languages
Japanese (ja)
Inventor
Shogo Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP14007079A priority Critical patent/JPS5663899A/en
Publication of JPS5663899A publication Critical patent/JPS5663899A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain artificial rock crystal almost free from lattice defects such as dislocation by holding an artificial rock crystal growing system at a temp. below the growing temp. for a fixed time, raising the temp. to the growing temp., and carrying out heat treatment to relieve the strain when the crystal is grown by a hydrothermal synthesis reaction.
CONSTITUTION: Starting material rock crystal is put in a lower part of an autoclave, and seed crystal is suspended from an upper part. The growing temp. is determined with a temp. difference so that the temp. of the upper part is made lower than that of the lower part. The upper and lower parts are held at a temp. below the growing temp. for a dixed time to well relive the strain of the seed crystal, and then heat treatment is carried out so that the growing temp. is simultaneously attained with the temp. difference. Both the crystals are melted to liq. phase, and the lower rock crystal is carried upward by a heat convection, supersatd., deposited on the seed crystal, and grown.
COPYRIGHT: (C)1981,JPO&Japio
JP14007079A 1979-10-30 1979-10-30 Growing method of artificial rock crystal Pending JPS5663899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14007079A JPS5663899A (en) 1979-10-30 1979-10-30 Growing method of artificial rock crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14007079A JPS5663899A (en) 1979-10-30 1979-10-30 Growing method of artificial rock crystal

Publications (1)

Publication Number Publication Date
JPS5663899A true JPS5663899A (en) 1981-05-30

Family

ID=15260263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14007079A Pending JPS5663899A (en) 1979-10-30 1979-10-30 Growing method of artificial rock crystal

Country Status (1)

Country Link
JP (1) JPS5663899A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009137828A (en) * 2007-11-15 2009-06-25 Nippon Dempa Kogyo Co Ltd Quartz device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009137828A (en) * 2007-11-15 2009-06-25 Nippon Dempa Kogyo Co Ltd Quartz device

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