JPS553631A - Manufacturing silicon carbide substrate - Google Patents
Manufacturing silicon carbide substrateInfo
- Publication number
- JPS553631A JPS553631A JP7500378A JP7500378A JPS553631A JP S553631 A JPS553631 A JP S553631A JP 7500378 A JP7500378 A JP 7500378A JP 7500378 A JP7500378 A JP 7500378A JP S553631 A JPS553631 A JP S553631A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- specimine
- sic
- support
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain an SiC plate with a large area by placing an Si substrate on a specimine table, growing a thin SiC film on the substrate in gaseous phase, heating the substrate to melt at a temerature at or above the melting point of Si and at or below 1,400°C, spreading it on the specimine table, and using it as a substrate to grow SiC.
CONSTITUTION: A water-cool dual vertical quartz reaction table 2 with a gas inlet port 18 at the top and working coils 8 outside of it is placed on a stainless steel flange 10 having a gas exhaust port 12 and a support 14 which supports a quartz support pole 16. Then a graphite support 4, on the top of which a specimine table 6 made of tantalum-silicide covered tantalum is provided, is inserted into the support pole 16, and an Si substrate 28 is placed on the specimine table 6. In this constitution, the substrate 28 is heated to the range of 1,100 to 1,200°C, and a 3C- type SiC layer 30 is grown on the substrate 28 by the use of SiCl4 containing carrier gas. Then, the temperature is raised up to the range of 1,400 to 1,460°C to melt only the substrate 28, and the solution 28' is spread on the specimine table 6 and cooled, whereby a thin SiC film 32 is grown on the layer 30 including the solution at 1,700°C.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53075003A JPS609658B2 (en) | 1978-06-20 | 1978-06-20 | Method for manufacturing silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53075003A JPS609658B2 (en) | 1978-06-20 | 1978-06-20 | Method for manufacturing silicon carbide substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS553631A true JPS553631A (en) | 1980-01-11 |
| JPS609658B2 JPS609658B2 (en) | 1985-03-12 |
Family
ID=13563581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53075003A Expired JPS609658B2 (en) | 1978-06-20 | 1978-06-20 | Method for manufacturing silicon carbide substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609658B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4869929A (en) * | 1987-11-10 | 1989-09-26 | Air Products And Chemicals, Inc. | Process for preparing sic protective films on metallic or metal impregnated substrates |
| CN102420178A (en) * | 2011-07-01 | 2012-04-18 | 上海华力微电子有限公司 | Novel silicon carbide film process for avoiding photoresistance poisoning |
| JP2017154955A (en) * | 2016-03-04 | 2017-09-07 | 株式会社デンソー | Semiconductor substrate formed of silicon carbide and method for manufacturing the same |
-
1978
- 1978-06-20 JP JP53075003A patent/JPS609658B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4869929A (en) * | 1987-11-10 | 1989-09-26 | Air Products And Chemicals, Inc. | Process for preparing sic protective films on metallic or metal impregnated substrates |
| CN102420178A (en) * | 2011-07-01 | 2012-04-18 | 上海华力微电子有限公司 | Novel silicon carbide film process for avoiding photoresistance poisoning |
| JP2017154955A (en) * | 2016-03-04 | 2017-09-07 | 株式会社デンソー | Semiconductor substrate formed of silicon carbide and method for manufacturing the same |
| US10490635B2 (en) | 2016-03-04 | 2019-11-26 | Denso Corporation | Semiconductor substrate made of silicon carbide and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS609658B2 (en) | 1985-03-12 |
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