JPS553632A - Manufacturing silicon carbide substrate - Google Patents

Manufacturing silicon carbide substrate

Info

Publication number
JPS553632A
JPS553632A JP7500578A JP7500578A JPS553632A JP S553632 A JPS553632 A JP S553632A JP 7500578 A JP7500578 A JP 7500578A JP 7500578 A JP7500578 A JP 7500578A JP S553632 A JPS553632 A JP S553632A
Authority
JP
Japan
Prior art keywords
substrate
sic
specimine
polycrystal
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7500578A
Other languages
Japanese (ja)
Other versions
JPS609659B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP53075005A priority Critical patent/JPS609659B2/en
Publication of JPS553632A publication Critical patent/JPS553632A/en
Publication of JPS609659B2 publication Critical patent/JPS609659B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain an SiC substrate containing polycrystal Si by placing an Si substrate on a specimine table having a surface layer containing C, growing an SiC layer on the surface and sides in gaseous phase, heating the substrate to melt it to the temperature at or above the melting point of Si and not to damage SiC, and then condensing it.
CONSTITUTION: A water-cool dual vertical quargz reaction tube 2 with a gas inlet port 18 at the top and working coils 8 outside of it is placed on a stainless steel flange 10 having a gas exhaust port 12 and a support which supports a quartz support pole 16. Then, a graphite support 4, on the top of which a specimine talbe 6 made of SiC coated graphite is provided, is inserted into the support pole 16, and an Si substrate 28 is placed on the specimine table 6. In this constitution, the substrate 28 is heated to the range of 1,100 to 1,200°C, and a 3C-type SiC layer 30 is grown on the substrate 28, and SiC polycrystal layers 31 and 29 are grown on the sides and the back of the substrate, by the use of SiCl4 containing carrier gas. Then the temperature is raised up to the range of 1,410 to 1,440°C to melt only the substrate 28, thereafter it is cooled, whereby the SiC substrate, in which polycrystal Si is included, can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP53075005A 1978-06-20 1978-06-20 Method for manufacturing silicon carbide substrate Expired JPS609659B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53075005A JPS609659B2 (en) 1978-06-20 1978-06-20 Method for manufacturing silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53075005A JPS609659B2 (en) 1978-06-20 1978-06-20 Method for manufacturing silicon carbide substrate

Publications (2)

Publication Number Publication Date
JPS553632A true JPS553632A (en) 1980-01-11
JPS609659B2 JPS609659B2 (en) 1985-03-12

Family

ID=13563642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53075005A Expired JPS609659B2 (en) 1978-06-20 1978-06-20 Method for manufacturing silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS609659B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100092666A1 (en) * 2006-12-25 2010-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100092666A1 (en) * 2006-12-25 2010-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method
US8696814B2 (en) * 2006-12-25 2014-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method

Also Published As

Publication number Publication date
JPS609659B2 (en) 1985-03-12

Similar Documents

Publication Publication Date Title
CN107223168B (en) The furnace of the brilliant distillation of kind for wide bandgap crystal
JP2008515749A5 (en)
US6800136B2 (en) Axial gradient transport apparatus and process
JPS55144499A (en) Producing silicon carbide crystal layer
JP4654030B2 (en) SiC wafer and manufacturing method thereof
ATE50886T1 (en) CARRIER DISC FOR SEMICONDUCTOR ARRANGEMENT MADE OF SILICON CARBIDE.
JPS553632A (en) Manufacturing silicon carbide substrate
JPS553631A (en) Manufacturing silicon carbide substrate
JPS54157780A (en) Production of silicon single crystal
EP3072995A1 (en) Method for producing silicon carbide crystals from vapour phase
JPS5632397A (en) Silicon single crystal pulling apparatus
JPS6045159B2 (en) Method for manufacturing silicon carbide crystal layer
JPS5648237A (en) Evacuated gaseous phase reactor
JPH0443878B2 (en)
JPS5696883A (en) Manufacture of silicon carbide diode
JPS5632396A (en) Silicon single crystal pulling apparatus
Runyan Growth of Large Diameter Silicon and Germanium Crystals by the Teal‐Little Method
JPS5510436A (en) Susceptor for vapor phase crystal growth
JPS54106081A (en) Growth method in vapor phase
JPS55116700A (en) Production of silicon carbide crystal layer
JPS5681924A (en) Susceptor for vertical type high frequency heating vapor phase growing system
JPH0364480B2 (en)
GB1487446A (en) Glass manufacture
JPS5561035A (en) Method for gas phase epitaxial growth of magnesia spinel
JPS6430212A (en) Substrate conveying tray for organic metal chemical vapor growth device