JPS5487700A - Gas phase magnespinel growing apparatus - Google Patents

Gas phase magnespinel growing apparatus

Info

Publication number
JPS5487700A
JPS5487700A JP15679277A JP15679277A JPS5487700A JP S5487700 A JPS5487700 A JP S5487700A JP 15679277 A JP15679277 A JP 15679277A JP 15679277 A JP15679277 A JP 15679277A JP S5487700 A JPS5487700 A JP S5487700A
Authority
JP
Japan
Prior art keywords
magnespinel
heated
gas phase
tray
holds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15679277A
Other languages
Japanese (ja)
Other versions
JPS6052118B2 (en
Inventor
Masayuki Chifuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52156792A priority Critical patent/JPS6052118B2/en
Publication of JPS5487700A publication Critical patent/JPS5487700A/en
Publication of JPS6052118B2 publication Critical patent/JPS6052118B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: Mg and Al are passed through different passages in reactor and heated to a predetermined temperature, thereby to grow desired magnespinel on substrate without contaminating Al source.
CONSTITUTION: A tray 5b holds Mg 6b and a tray 5c holds Al 6c respectively. A lower hollow portion 2c holding Al has a length l2, preferably 1.5 to 2 times lenght l1 of an upper hollow portion 2b holding Mg. If l2 is shorter than this length, effective prevention of Al contamination is not achieved. Al is heated to 500 to 600°C by a heating means 7b and Mg is heated to 600 to 900°C by a heating means 7c. Mg is contacted with HCl gas. Carrier gas from an inlet port 8 mixes with reactive of Al and Mg and advances toward magnespinel substrates 10 which are heated to 1000 to 1300°C to effect growing of magnespinel single crystal to a desired thickness.
COPYRIGHT: (C)1979,JPO&Japio
JP52156792A 1977-12-26 1977-12-26 Magnesia spinel vapor phase growth equipment Expired JPS6052118B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52156792A JPS6052118B2 (en) 1977-12-26 1977-12-26 Magnesia spinel vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52156792A JPS6052118B2 (en) 1977-12-26 1977-12-26 Magnesia spinel vapor phase growth equipment

Publications (2)

Publication Number Publication Date
JPS5487700A true JPS5487700A (en) 1979-07-12
JPS6052118B2 JPS6052118B2 (en) 1985-11-18

Family

ID=15635399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52156792A Expired JPS6052118B2 (en) 1977-12-26 1977-12-26 Magnesia spinel vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS6052118B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0533368Y2 (en) * 1987-07-24 1993-08-25

Also Published As

Publication number Publication date
JPS6052118B2 (en) 1985-11-18

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