JPS5632304A - Metal oxide film forming method - Google Patents

Metal oxide film forming method

Info

Publication number
JPS5632304A
JPS5632304A JP10463779A JP10463779A JPS5632304A JP S5632304 A JPS5632304 A JP S5632304A JP 10463779 A JP10463779 A JP 10463779A JP 10463779 A JP10463779 A JP 10463779A JP S5632304 A JPS5632304 A JP S5632304A
Authority
JP
Japan
Prior art keywords
gas
furnace
growing
substrate
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10463779A
Other languages
Japanese (ja)
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10463779A priority Critical patent/JPS5632304A/en
Publication of JPS5632304A publication Critical patent/JPS5632304A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a metal oxide film free from a protrusion due to a metal wiring layer and a pinhole on a substrate by using a growing gas contg. CO2 gas as a reactive gas and irradiating a growing region with far ultraviolet rays which excite CO2 gas.
CONSTITUTION: Semiconductor substrate 4 having a metal wiring layer and mounted on susceptor 5 is put in transparent growing furnace 3 provided with gas introduction pipe 1 at one side and gas exhaust pipe 2 at the other side. Growing gas 6 contg. CO2 gas as a reactive gas is fed into furnace 3 from pipe 1 at 100W200cc/min flow rate. The growing region of furnace 3 including substrate 4 and susceptor 5 is then irradiated with far ultraviolet rays 7, through the upper wall of furnace 3, having wavelengths in which rays 7 are absorbed in CO2 gas and excite the gas. At the same time, substrate 4 is heated with infrared heater 8 set under furnace 3 to grow a metal oxide film on substrate 4.
COPYRIGHT: (C)1981,JPO&Japio
JP10463779A 1979-08-17 1979-08-17 Metal oxide film forming method Pending JPS5632304A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10463779A JPS5632304A (en) 1979-08-17 1979-08-17 Metal oxide film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10463779A JPS5632304A (en) 1979-08-17 1979-08-17 Metal oxide film forming method

Publications (1)

Publication Number Publication Date
JPS5632304A true JPS5632304A (en) 1981-04-01

Family

ID=14385955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10463779A Pending JPS5632304A (en) 1979-08-17 1979-08-17 Metal oxide film forming method

Country Status (1)

Country Link
JP (1) JPS5632304A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59501157A (en) * 1982-06-22 1984-07-05 ヒユ−ズ・エア　クラフト・カンパニ− Low temperature method for depositing epitaxial layers
JPS6314872A (en) * 1986-07-03 1988-01-22 Semiconductor Energy Lab Co Ltd Formation of silicon oxide film
JPH03107464A (en) * 1989-08-31 1991-05-07 American Teleph & Telegr Co <Att> Method and device for accumulating dielectric film
US8003429B2 (en) * 2007-11-19 2011-08-23 Samsung Electronics Co., Ltd. Method of fabricating image sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59501157A (en) * 1982-06-22 1984-07-05 ヒユ−ズ・エア　クラフト・カンパニ− Low temperature method for depositing epitaxial layers
JPS6314872A (en) * 1986-07-03 1988-01-22 Semiconductor Energy Lab Co Ltd Formation of silicon oxide film
JPH0474429B2 (en) * 1986-07-03 1992-11-26
JPH03107464A (en) * 1989-08-31 1991-05-07 American Teleph & Telegr Co <Att> Method and device for accumulating dielectric film
US8003429B2 (en) * 2007-11-19 2011-08-23 Samsung Electronics Co., Ltd. Method of fabricating image sensor

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