JPS57164524A - Vapor reaction for semiconductor wafer - Google Patents

Vapor reaction for semiconductor wafer

Info

Publication number
JPS57164524A
JPS57164524A JP4843081A JP4843081A JPS57164524A JP S57164524 A JPS57164524 A JP S57164524A JP 4843081 A JP4843081 A JP 4843081A JP 4843081 A JP4843081 A JP 4843081A JP S57164524 A JPS57164524 A JP S57164524A
Authority
JP
Japan
Prior art keywords
reaction tube
semiconductor wafers
reaction
gas
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4843081A
Other languages
Japanese (ja)
Inventor
Yoshitami Oka
Toshio Yonezawa
Takashi Yasujima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4843081A priority Critical patent/JPS57164524A/en
Publication of JPS57164524A publication Critical patent/JPS57164524A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

PURPOSE:To prevent a thickened part formed at the circumference of the film and the irregularity of the film thickness or the like by a method wherein vapor phase reaction is applied to semiconductor wafers by horizontally arranging the semiconductor wafers in a vertical reaction tube. CONSTITUTION:A reaction tube 11 made by a heat resistant material is vertically provided and semiconductor wafers 1, 1'... are inserted in a boat 12 so that the main surface of the seminconductor wafers may be vertical to the axis line of the reaction tube 11 and the semiconductor wafers are housed in the reaction tube 11 from a lid part 11a located at the upper part of the reaction tube 11. The reaction tube 11 is provided with a guide port 11b for reactor gas and an exhaust port 11c to maintain desired composite gas and pressure atmosphere. Next, the inside of the reaction tube 11 is washed by nitric gas, for example, to decompress and to guide reaction gas in the reaction tube 11 and after forming the reaction tube 11 at desired atmosphere, vapor phase reaction is applied to the semiconductor wafers by moving heat coils 13 up and down. The distance, speed, and cycle or the like of the heat coils 13 in up and down directions are controlled by previously designing a program.
JP4843081A 1981-04-02 1981-04-02 Vapor reaction for semiconductor wafer Pending JPS57164524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4843081A JPS57164524A (en) 1981-04-02 1981-04-02 Vapor reaction for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4843081A JPS57164524A (en) 1981-04-02 1981-04-02 Vapor reaction for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS57164524A true JPS57164524A (en) 1982-10-09

Family

ID=12803126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4843081A Pending JPS57164524A (en) 1981-04-02 1981-04-02 Vapor reaction for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS57164524A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247029U (en) * 1988-09-28 1990-03-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247029U (en) * 1988-09-28 1990-03-30

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