Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP14168276ApriorityCriticalpatent/JPS5365664A/en
Publication of JPS5365664ApublicationCriticalpatent/JPS5365664A/en
PURPOSE: To avoid the danger in that the hydrogen gas is used in a high-temperature furnace, by carrying out a thermal treatment after forming a hydrogen injection layer near the wafer surface under the manufacture process of the semiconductor.
COPYRIGHT: (C)1978,JPO&Japio
JP14168276A1976-11-241976-11-24Manufacture of semiconductor device
PendingJPS5365664A
(en)