JPS5248467A - Process for production of semiconductor device - Google Patents
Process for production of semiconductor deviceInfo
- Publication number
- JPS5248467A JPS5248467A JP50124759A JP12475975A JPS5248467A JP S5248467 A JPS5248467 A JP S5248467A JP 50124759 A JP50124759 A JP 50124759A JP 12475975 A JP12475975 A JP 12475975A JP S5248467 A JPS5248467 A JP S5248467A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- formation
- active layer
- exchanging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make an active layer of good crystal characteristics by forming the state of zero presence of dopant gas in exchanging from the formation of a buffer layer to the formation of the active layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50124759A JPS5248467A (en) | 1975-10-15 | 1975-10-15 | Process for production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50124759A JPS5248467A (en) | 1975-10-15 | 1975-10-15 | Process for production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5248467A true JPS5248467A (en) | 1977-04-18 |
JPS5534575B2 JPS5534575B2 (en) | 1980-09-08 |
Family
ID=14893401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50124759A Granted JPS5248467A (en) | 1975-10-15 | 1975-10-15 | Process for production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5248467A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586113A (en) * | 1978-12-23 | 1980-06-28 | Fujitsu Ltd | Vapor phase growth process |
JPS5635411A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Epitaxial wafer of gallium arsenide and its manufacture |
-
1975
- 1975-10-15 JP JP50124759A patent/JPS5248467A/en active Granted
Non-Patent Citations (1)
Title |
---|
JAPANESE JOURNAL OF APPLIED PHYSICS#V10#M2=1971 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586113A (en) * | 1978-12-23 | 1980-06-28 | Fujitsu Ltd | Vapor phase growth process |
JPS5712527B2 (en) * | 1978-12-23 | 1982-03-11 | ||
JPS5635411A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Epitaxial wafer of gallium arsenide and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS5534575B2 (en) | 1980-09-08 |
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