JPS5248467A - Process for production of semiconductor device - Google Patents

Process for production of semiconductor device

Info

Publication number
JPS5248467A
JPS5248467A JP50124759A JP12475975A JPS5248467A JP S5248467 A JPS5248467 A JP S5248467A JP 50124759 A JP50124759 A JP 50124759A JP 12475975 A JP12475975 A JP 12475975A JP S5248467 A JPS5248467 A JP S5248467A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
formation
active layer
exchanging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50124759A
Other languages
Japanese (ja)
Other versions
JPS5534575B2 (en
Inventor
Akihiro Shibatomi
Kenya Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50124759A priority Critical patent/JPS5248467A/en
Publication of JPS5248467A publication Critical patent/JPS5248467A/en
Publication of JPS5534575B2 publication Critical patent/JPS5534575B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make an active layer of good crystal characteristics by forming the state of zero presence of dopant gas in exchanging from the formation of a buffer layer to the formation of the active layer.
COPYRIGHT: (C)1977,JPO&Japio
JP50124759A 1975-10-15 1975-10-15 Process for production of semiconductor device Granted JPS5248467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50124759A JPS5248467A (en) 1975-10-15 1975-10-15 Process for production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50124759A JPS5248467A (en) 1975-10-15 1975-10-15 Process for production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5248467A true JPS5248467A (en) 1977-04-18
JPS5534575B2 JPS5534575B2 (en) 1980-09-08

Family

ID=14893401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50124759A Granted JPS5248467A (en) 1975-10-15 1975-10-15 Process for production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5248467A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586113A (en) * 1978-12-23 1980-06-28 Fujitsu Ltd Vapor phase growth process
JPS5635411A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Epitaxial wafer of gallium arsenide and its manufacture

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS#V10#M2=1971 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586113A (en) * 1978-12-23 1980-06-28 Fujitsu Ltd Vapor phase growth process
JPS5712527B2 (en) * 1978-12-23 1982-03-11
JPS5635411A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Epitaxial wafer of gallium arsenide and its manufacture

Also Published As

Publication number Publication date
JPS5534575B2 (en) 1980-09-08

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