JPS5586113A - Vapor phase growth process - Google Patents

Vapor phase growth process

Info

Publication number
JPS5586113A
JPS5586113A JP16162378A JP16162378A JPS5586113A JP S5586113 A JPS5586113 A JP S5586113A JP 16162378 A JP16162378 A JP 16162378A JP 16162378 A JP16162378 A JP 16162378A JP S5586113 A JPS5586113 A JP S5586113A
Authority
JP
Japan
Prior art keywords
container
gas
vapor phase
phase growth
sulfur
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16162378A
Other languages
Japanese (ja)
Other versions
JPS5712527B2 (en
Inventor
Masaharu Nogami
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16162378A priority Critical patent/JPS5586113A/en
Publication of JPS5586113A publication Critical patent/JPS5586113A/en
Publication of JPS5712527B2 publication Critical patent/JPS5712527B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a desired impurity density distribution in a vapor phase growth layer in good reproducibility through simple operation by dropping suddenly a temperature to hold a vessel containing an impurity source to add in the vapor phase growth layer lower than a constant temperature.
CONSTITUTION: A buffer layer of high resistance is grown by feeding a carrier gas containing AsCl3 gas on Ga 3 through passing AsCl3 bulb container 4 from a gas path. Then, a path 7 is opened with the gas fed from paths 5, 8 retained as it is, a carrier gas containing sulfur-saturated gas is fed in a reaction tube 1 from a sulfur container 6 kept warm by a thermostatic oven 11 installed beforehand, and few seconds later, the container 6 is removed from the thermostatic oven 11. The container 6 is thus exposed to room atmosphere to sudden cooling, and a steam pressure of the sulfur gas from the container 6 is decreased to grow an operation layer. A desired impurity density distribution can thus be formed in the vapor phase growth layer.
COPYRIGHT: (C)1980,JPO&Japio
JP16162378A 1978-12-23 1978-12-23 Vapor phase growth process Granted JPS5586113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16162378A JPS5586113A (en) 1978-12-23 1978-12-23 Vapor phase growth process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16162378A JPS5586113A (en) 1978-12-23 1978-12-23 Vapor phase growth process

Publications (2)

Publication Number Publication Date
JPS5586113A true JPS5586113A (en) 1980-06-28
JPS5712527B2 JPS5712527B2 (en) 1982-03-11

Family

ID=15738693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16162378A Granted JPS5586113A (en) 1978-12-23 1978-12-23 Vapor phase growth process

Country Status (1)

Country Link
JP (1) JPS5586113A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010077977A (en) * 2008-09-23 2010-04-08 Murakami Corp Suction cup device
CN109962164A (en) * 2019-03-26 2019-07-02 暨南大学 A kind of constant temperature gas treatment equipment includes solar battery of three-dimensional-two-dimentional perovskite thin film and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248467A (en) * 1975-10-15 1977-04-18 Fujitsu Ltd Process for production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248467A (en) * 1975-10-15 1977-04-18 Fujitsu Ltd Process for production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010077977A (en) * 2008-09-23 2010-04-08 Murakami Corp Suction cup device
CN109962164A (en) * 2019-03-26 2019-07-02 暨南大学 A kind of constant temperature gas treatment equipment includes solar battery of three-dimensional-two-dimentional perovskite thin film and preparation method thereof

Also Published As

Publication number Publication date
JPS5712527B2 (en) 1982-03-11

Similar Documents

Publication Publication Date Title
GB996020A (en) Improvements in or relating to methods of synthesizing compound semiconductor crystals
JPS5586113A (en) Vapor phase growth process
JPS54133480A (en) Growth method for liquid phase epitaxial
JPS5626800A (en) Vapor phase epitaxial growing method
JPS56134508A (en) Synthetic method of diamond
JPS5681924A (en) Susceptor for vertical type high frequency heating vapor phase growing system
Seki et al. Vapor Transport of Gallium in the Ga-PCl3-H2 System
JPS573797A (en) Vapor phase growing method of compound semiconductor and its vapor phase growing apparatus
JPS56124228A (en) Method for low-tension epitaxial growth
JPS6379315A (en) Growth of iii-v compound single crystal
JPS54102867A (en) Gaas epitaxial vapor phase growth method
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5751127A (en) Growth of semiconductor of compound of 3-5 group in gaseous phase
JPS5599717A (en) Method of growing crystal
JPS55167199A (en) Vapor phase epitaxial growing apparatus
JPS6421074A (en) Method for selectively growing thin metallic film
JPS5756400A (en) Continuous vapor-phase epitaxial growing furnace
JPS5650509A (en) Vapor-phase epitaxial growth method
JPS5632400A (en) Vapor phase growing method for gallium phosphide layer
JPS5474672A (en) Gaas vapor phase growth method
JPS57149722A (en) Method of vapor epitaxial growth
JPS5544791A (en) Diffusing method for impurity to 3-5 compound
JPS574120A (en) Vapor phase growth of compound semiconductor
JPS53105966A (en) Growth method for epitaxial layer
JPS57149721A (en) Method of vapor epitaxial growth