JPS57149722A - Method of vapor epitaxial growth - Google Patents

Method of vapor epitaxial growth

Info

Publication number
JPS57149722A
JPS57149722A JP3461881A JP3461881A JPS57149722A JP S57149722 A JPS57149722 A JP S57149722A JP 3461881 A JP3461881 A JP 3461881A JP 3461881 A JP3461881 A JP 3461881A JP S57149722 A JPS57149722 A JP S57149722A
Authority
JP
Japan
Prior art keywords
tein
controlled
kept
tube
choking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3461881A
Other languages
Japanese (ja)
Inventor
Takashi Fukui
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3461881A priority Critical patent/JPS57149722A/en
Publication of JPS57149722A publication Critical patent/JPS57149722A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

PURPOSE:To obtain a homogeneous and high quality compound semiconductor with good reproducibility, by introducing the vapor of organic metal compound kept over a room temperature and under a boiling point into a reaction tube at a temperature under the decomposition temperature thereof. CONSTITUTION:A thermostat 20 is kept at 50 deg.C with TEIn (triethyl In) in a bomb 2 kept at T1=50 deg.C and heated for keeping at T2=70 deg.C. H23 is purified 4 and controlled 6 to 100cc/min with PH3l diluted to 5% with H2 controlled 8 to 10cc/min. Carrier H2 is controlled 5 to 3,000cc/min t to be supplied to the reaction tube 13 for the growth of InP on a substrate 15 at 600 deg.C. This method increases the vapor pressure of TEIn in the bomb 2 with the reduction of the introduced amount of H2 to producte no liquid-drops of TEIn on bubbling without choking the tube or liquid-drop attachment on the substrate. Further, heating 21 prevents TEIn from attaching on the tube wall, choking and decomposing. Thus, a homogeneous and high quality InP is grown with good reproducibility.
JP3461881A 1981-03-12 1981-03-12 Method of vapor epitaxial growth Pending JPS57149722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3461881A JPS57149722A (en) 1981-03-12 1981-03-12 Method of vapor epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3461881A JPS57149722A (en) 1981-03-12 1981-03-12 Method of vapor epitaxial growth

Publications (1)

Publication Number Publication Date
JPS57149722A true JPS57149722A (en) 1982-09-16

Family

ID=12419359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3461881A Pending JPS57149722A (en) 1981-03-12 1981-03-12 Method of vapor epitaxial growth

Country Status (1)

Country Link
JP (1) JPS57149722A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154027A (en) * 1984-12-26 1986-07-12 Toshiba Corp Method for gas-phase growth of semiconductor single crystal
US5256595A (en) * 1993-02-19 1993-10-26 The United States Of America As Represented By The Secretary Of The Army. Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017951A (en) * 1973-06-18 1975-02-25
JPS5132952A (en) * 1974-09-13 1976-03-19 Nippon Electric Co Denshibuhin no seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017951A (en) * 1973-06-18 1975-02-25
JPS5132952A (en) * 1974-09-13 1976-03-19 Nippon Electric Co Denshibuhin no seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154027A (en) * 1984-12-26 1986-07-12 Toshiba Corp Method for gas-phase growth of semiconductor single crystal
US5256595A (en) * 1993-02-19 1993-10-26 The United States Of America As Represented By The Secretary Of The Army. Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor

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