SE9503427D0 - A method for growing epitaxially and a device for such growth - Google Patents

A method for growing epitaxially and a device for such growth

Info

Publication number
SE9503427D0
SE9503427D0 SE9503427A SE9503427A SE9503427D0 SE 9503427 D0 SE9503427 D0 SE 9503427D0 SE 9503427 A SE9503427 A SE 9503427A SE 9503427 A SE9503427 A SE 9503427A SE 9503427 D0 SE9503427 D0 SE 9503427D0
Authority
SE
Sweden
Prior art keywords
substrate
growth
source material
susceptor
gas flow
Prior art date
Application number
SE9503427A
Other languages
Swedish (sv)
Inventor
Olle Kordina
Christer Hallin
Erik Janzen
Asko Vehanen
Rositza Yakimova
Marko Tuominen
Original Assignee
Abb Research Ltd
Okmetic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd, Okmetic Ltd filed Critical Abb Research Ltd
Priority to SE9503427A priority Critical patent/SE9503427D0/en
Publication of SE9503427D0 publication Critical patent/SE9503427D0/en
Priority to PCT/SE1996/001231 priority patent/WO1997013012A1/en
Priority to JP9514192A priority patent/JPH11513352A/en
Priority to EP96933698A priority patent/EP0853689A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

In a method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof on a substrate (13) received in a susceptor (7) having circumferential walls (8) these walls and by that the substrate and a source material (24) for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably. The carrier gas flow is fed into the susceptor towards the substrate for carrying said source material to the substrate for said growth. At least a part (24) of said source material is provided in a solid state as the material grown in a container comprising the susceptor (7), and said source material part is by heating in said container brought to a vapour state and carried in the vapour state by the carrier gas flow to the substrate for said growth.
SE9503427A 1995-10-04 1995-10-04 A method for growing epitaxially and a device for such growth SE9503427D0 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9503427A SE9503427D0 (en) 1995-10-04 1995-10-04 A method for growing epitaxially and a device for such growth
PCT/SE1996/001231 WO1997013012A1 (en) 1995-10-04 1996-10-02 A method for epitaxially growing objects and a device for such a growth
JP9514192A JPH11513352A (en) 1995-10-04 1996-10-02 Method for epitaxially growing an object and apparatus for such growth
EP96933698A EP0853689A1 (en) 1995-10-04 1996-10-02 A method for epitaxially growing objects and a device for such a growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9503427A SE9503427D0 (en) 1995-10-04 1995-10-04 A method for growing epitaxially and a device for such growth

Publications (1)

Publication Number Publication Date
SE9503427D0 true SE9503427D0 (en) 1995-10-04

Family

ID=20399688

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9503427A SE9503427D0 (en) 1995-10-04 1995-10-04 A method for growing epitaxially and a device for such growth

Country Status (4)

Country Link
EP (1) EP0853689A1 (en)
JP (1) JPH11513352A (en)
SE (1) SE9503427D0 (en)
WO (1) WO1997013012A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063186A (en) 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
FR2839730B1 (en) * 2002-05-15 2004-08-27 Centre Nat Rech Scient SINGLE CRYSTAL SILICON CARBIDE FORMATION
JP4751373B2 (en) * 2007-07-09 2011-08-17 住友電気工業株式会社 Synthesis method of GaN single crystal
JP6675197B2 (en) * 2015-12-28 2020-04-01 昭和電工株式会社 Silicon carbide single crystal manufacturing equipment
CN108588836A (en) * 2018-06-14 2018-09-28 河北普兴电子科技股份有限公司 Growing silicon carbice crystals thermal field rotating device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05208900A (en) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd Apparatus for growing silicon carbide single crystal

Also Published As

Publication number Publication date
JPH11513352A (en) 1999-11-16
WO1997013012A1 (en) 1997-04-10
EP0853689A1 (en) 1998-07-22

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