GB2008084A - Improvements in or relating to the growth of semiconductor compounds - Google Patents

Improvements in or relating to the growth of semiconductor compounds

Info

Publication number
GB2008084A
GB2008084A GB7844821A GB7844821A GB2008084A GB 2008084 A GB2008084 A GB 2008084A GB 7844821 A GB7844821 A GB 7844821A GB 7844821 A GB7844821 A GB 7844821A GB 2008084 A GB2008084 A GB 2008084A
Authority
GB
United Kingdom
Prior art keywords
growth
substrates
semiconductor compounds
source
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7844821A
Other versions
GB2008084B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Post Office
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Priority to GB7844821A priority Critical patent/GB2008084B/en
Publication of GB2008084A publication Critical patent/GB2008084A/en
Application granted granted Critical
Publication of GB2008084B publication Critical patent/GB2008084B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

This invention relates to the growth of semiconductor compounds. A system for growing semiconductor compounds such as gallium arsenide has a furnace 10 which includes a growth enclosure defined by two tubular housing members 12, 14 connected together to form a sealed enclosure. The furnace has two zones a first of which can be maintained at a first temperature and the second of which can be maintained at a second different temperature. The first zone contains a source 21 of the semiconductor material to be grown and the second zone contains a substrate or substrates 26 on which the material is grown. A vapour transport medium is passed over the source material towards the substrates and the temperatures are so set that the transport medium transports material from the source and deposits it on the substrates. Dopant material is fed into the second zone. <IMAGE>
GB7844821A 1977-11-17 1978-11-16 Growth of semiconductor compounds Expired GB2008084B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7844821A GB2008084B (en) 1977-11-17 1978-11-16 Growth of semiconductor compounds

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4793577 1977-11-17
GB7844821A GB2008084B (en) 1977-11-17 1978-11-16 Growth of semiconductor compounds

Publications (2)

Publication Number Publication Date
GB2008084A true GB2008084A (en) 1979-05-31
GB2008084B GB2008084B (en) 1982-07-28

Family

ID=26266169

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7844821A Expired GB2008084B (en) 1977-11-17 1978-11-16 Growth of semiconductor compounds

Country Status (1)

Country Link
GB (1) GB2008084B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0426105A1 (en) * 1989-10-30 1991-05-08 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus
EP0555614A1 (en) * 1992-02-13 1993-08-18 International Business Machines Corporation Metal-organic gas supply for MOVPE and MOMBE
US5250323A (en) * 1989-10-30 1993-10-05 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus having an exhaust device including trap
EP2439769A1 (en) * 2010-10-07 2012-04-11 Sandvik Thermal Process, Inc. Apparatus with multiple heating systems for in-line thermal treatment of substrates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0426105A1 (en) * 1989-10-30 1991-05-08 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus
US5250323A (en) * 1989-10-30 1993-10-05 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus having an exhaust device including trap
EP0555614A1 (en) * 1992-02-13 1993-08-18 International Business Machines Corporation Metal-organic gas supply for MOVPE and MOMBE
EP2439769A1 (en) * 2010-10-07 2012-04-11 Sandvik Thermal Process, Inc. Apparatus with multiple heating systems for in-line thermal treatment of substrates

Also Published As

Publication number Publication date
GB2008084B (en) 1982-07-28

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee
PCPE Delete 'patent ceased' from journal

Free format text: DELETE IN JOURNAL 5236, PAGE 2358

PCNP Patent ceased through non-payment of renewal fee

Effective date: 19951116