JPS5624927A - Method of vapor phase growth of 3-5 group compound semiconductor in periodic table - Google Patents

Method of vapor phase growth of 3-5 group compound semiconductor in periodic table

Info

Publication number
JPS5624927A
JPS5624927A JP10055979A JP10055979A JPS5624927A JP S5624927 A JPS5624927 A JP S5624927A JP 10055979 A JP10055979 A JP 10055979A JP 10055979 A JP10055979 A JP 10055979A JP S5624927 A JPS5624927 A JP S5624927A
Authority
JP
Japan
Prior art keywords
reaction chamber
group
substrate
iii
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10055979A
Other languages
Japanese (ja)
Other versions
JPS647487B2 (en
Inventor
Masaji Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10055979A priority Critical patent/JPS5624927A/en
Publication of JPS5624927A publication Critical patent/JPS5624927A/en
Publication of JPS647487B2 publication Critical patent/JPS647487B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a uniform and less contaminated III-V group epitaxial layer in the Periodic Table by a method wherein the respective vapor of volatile compound of III and V group compound is introduced into an evacuated reaction chamber, and the chemical reaction is made occur over a substrate within the reaction chamber. CONSTITUTION:Only the vapor of III group and V group elements are introduced without using of carrier gas, when a substrate which to be grown is entered in a reaction chamber holding a vaccum condition and makes III-V group semiconductor layer epitaxially grown thereon by heating at a prescribed temperature. That is, GaAs semi-insulating substrate which to be grown is provided in the reaction chamber made of quartz having an electric furnace 4 at the outer circumference by mans of a substrate holder 1 made of quartz, and the inside of the reaction chamber 3 is made vaccum condition, 6 Torr and the substrate 2 is heated at about 700 deg.C. In this condition, N+ type GaAs layer is epitaxially grown over the substrate 2 by feeding vapor of volatile compound 7 such as AlCl, GaCl, or the like containing III group element through one gas inlet 5 provided at the reaction chamber 3 and vapor of volatile compound 8 such as PH3, AsH4, or the like containing V group element through another gas inlet 6.
JP10055979A 1979-08-06 1979-08-06 Method of vapor phase growth of 3-5 group compound semiconductor in periodic table Granted JPS5624927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10055979A JPS5624927A (en) 1979-08-06 1979-08-06 Method of vapor phase growth of 3-5 group compound semiconductor in periodic table

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10055979A JPS5624927A (en) 1979-08-06 1979-08-06 Method of vapor phase growth of 3-5 group compound semiconductor in periodic table

Publications (2)

Publication Number Publication Date
JPS5624927A true JPS5624927A (en) 1981-03-10
JPS647487B2 JPS647487B2 (en) 1989-02-09

Family

ID=14277278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10055979A Granted JPS5624927A (en) 1979-08-06 1979-08-06 Method of vapor phase growth of 3-5 group compound semiconductor in periodic table

Country Status (1)

Country Link
JP (1) JPS5624927A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5621364A (en) * 1992-04-27 1997-04-15 Siemens Aktiengesellschaft Weighted reflector for surface acoustic waves

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS534778A (en) * 1976-07-02 1978-01-17 Matsushita Electric Ind Co Ltd Crystal growth method with molecular beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS534778A (en) * 1976-07-02 1978-01-17 Matsushita Electric Ind Co Ltd Crystal growth method with molecular beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5621364A (en) * 1992-04-27 1997-04-15 Siemens Aktiengesellschaft Weighted reflector for surface acoustic waves

Also Published As

Publication number Publication date
JPS647487B2 (en) 1989-02-09

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