SE9503427D0 - A method for epitaxially growing objects and a device for such a growth - Google Patents

A method for epitaxially growing objects and a device for such a growth

Info

Publication number
SE9503427D0
SE9503427D0 SE9503427A SE9503427A SE9503427D0 SE 9503427 D0 SE9503427 D0 SE 9503427D0 SE 9503427 A SE9503427 A SE 9503427A SE 9503427 A SE9503427 A SE 9503427A SE 9503427 D0 SE9503427 D0 SE 9503427D0
Authority
SE
Sweden
Prior art keywords
substrate
growth
source material
susceptor
gas flow
Prior art date
Application number
SE9503427A
Other languages
English (en)
Inventor
Olle Kordina
Christer Hallin
Erik Janzen
Asko Vehanen
Rositza Yakimova
Marko Tuominen
Original Assignee
Abb Research Ltd
Okmetic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd, Okmetic Ltd filed Critical Abb Research Ltd
Priority to SE9503427A priority Critical patent/SE9503427D0/sv
Publication of SE9503427D0 publication Critical patent/SE9503427D0/sv
Priority to EP96933698A priority patent/EP0853689A1/en
Priority to JP9514192A priority patent/JPH11513352A/ja
Priority to PCT/SE1996/001231 priority patent/WO1997013012A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE9503427A 1995-10-04 1995-10-04 A method for epitaxially growing objects and a device for such a growth SE9503427D0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9503427A SE9503427D0 (sv) 1995-10-04 1995-10-04 A method for epitaxially growing objects and a device for such a growth
EP96933698A EP0853689A1 (en) 1995-10-04 1996-10-02 A method for epitaxially growing objects and a device for such a growth
JP9514192A JPH11513352A (ja) 1995-10-04 1996-10-02 物体をエピタキシャル成長させる方法及びそのような成長のための装置
PCT/SE1996/001231 WO1997013012A1 (en) 1995-10-04 1996-10-02 A method for epitaxially growing objects and a device for such a growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9503427A SE9503427D0 (sv) 1995-10-04 1995-10-04 A method for epitaxially growing objects and a device for such a growth

Publications (1)

Publication Number Publication Date
SE9503427D0 true SE9503427D0 (sv) 1995-10-04

Family

ID=20399688

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9503427A SE9503427D0 (sv) 1995-10-04 1995-10-04 A method for epitaxially growing objects and a device for such a growth

Country Status (4)

Country Link
EP (1) EP0853689A1 (sv)
JP (1) JPH11513352A (sv)
SE (1) SE9503427D0 (sv)
WO (1) WO1997013012A1 (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063186A (en) 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
FR2839730B1 (fr) * 2002-05-15 2004-08-27 Centre Nat Rech Scient Formation de carbure de silicium monocristallin
JP4751373B2 (ja) * 2007-07-09 2011-08-17 住友電気工業株式会社 ＧａＮ単結晶の合成方法
JP6675197B2 (ja) * 2015-12-28 2020-04-01 昭和電工株式会社 炭化珪素単結晶の製造装置
CN108588836A (zh) * 2018-06-14 2018-09-28 河北普兴电子科技股份有限公司 碳化硅晶体生长热场旋转装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置

Also Published As

Publication number Publication date
WO1997013012A1 (en) 1997-04-10
EP0853689A1 (en) 1998-07-22
JPH11513352A (ja) 1999-11-16

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