SE9502288D0 - A device and a method for epitaxially growing objects by CVD - Google Patents

A device and a method for epitaxially growing objects by CVD

Info

Publication number
SE9502288D0
SE9502288D0 SE9502288A SE9502288A SE9502288D0 SE 9502288 D0 SE9502288 D0 SE 9502288D0 SE 9502288 A SE9502288 A SE 9502288A SE 9502288 A SE9502288 A SE 9502288A SE 9502288 D0 SE9502288 D0 SE 9502288D0
Authority
SE
Sweden
Prior art keywords
substrate
walls
susceptor
epitaxially growing
gas mixture
Prior art date
Application number
SE9502288A
Other languages
English (en)
Inventor
Olle Kordina
Christer Hallin
Erik Janzen
Original Assignee
Abb Research Ltd
Okmetic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=20398726&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SE9502288(D0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Abb Research Ltd, Okmetic Ltd filed Critical Abb Research Ltd
Priority to SE9502288A priority Critical patent/SE9502288D0/sv
Publication of SE9502288D0 publication Critical patent/SE9502288D0/sv
Priority to US08/511,324 priority patent/US5704985A/en
Priority to EP96922326A priority patent/EP0835336B2/en
Priority to DE69623962T priority patent/DE69623962T3/de
Priority to JP50435097A priority patent/JP4121555B2/ja
Priority to PCT/SE1996/000822 priority patent/WO1997001658A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
SE9502288A 1995-06-26 1995-06-26 A device and a method for epitaxially growing objects by CVD SE9502288D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9502288A SE9502288D0 (sv) 1995-06-26 1995-06-26 A device and a method for epitaxially growing objects by CVD
US08/511,324 US5704985A (en) 1995-06-26 1995-08-04 Device and a method for epitaxially growing objects by CVD
EP96922326A EP0835336B2 (en) 1995-06-26 1996-06-24 A device and a method for epitaxially growing objects by cvd
DE69623962T DE69623962T3 (de) 1995-06-26 1996-06-24 Verfahren und vorrichtung zum epitaktischen wachstum mittels cvd
JP50435097A JP4121555B2 (ja) 1995-06-26 1996-06-24 Ｃｖｄによって目的物をエピタキシアル成長させる装置と方法
PCT/SE1996/000822 WO1997001658A1 (en) 1995-06-26 1996-06-24 A device and a method for epitaxially growing objects by cvd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9502288A SE9502288D0 (sv) 1995-06-26 1995-06-26 A device and a method for epitaxially growing objects by CVD

Publications (1)

Publication Number Publication Date
SE9502288D0 true SE9502288D0 (sv) 1995-06-26

Family

ID=20398726

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9502288A SE9502288D0 (sv) 1995-06-26 1995-06-26 A device and a method for epitaxially growing objects by CVD

Country Status (6)

Country Link
US (1) US5704985A (sv)
EP (1) EP0835336B2 (sv)
JP (1) JP4121555B2 (sv)
DE (1) DE69623962T3 (sv)
SE (1) SE9502288D0 (sv)
WO (1) WO1997001658A1 (sv)

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SE9603586D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth
SE9603587D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
JP3336897B2 (ja) * 1997-02-07 2002-10-21 三菱住友シリコン株式会社 気相成長装置用サセプター
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
RU2162117C2 (ru) * 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
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US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
CN1312079C (zh) * 2004-07-07 2007-04-25 中国科学院半导体研究所 一种竖直式高温大功率碳化硅外延材料制造装置
JP4923452B2 (ja) * 2004-08-27 2012-04-25 株式会社デンソー ＳｉＣ単結晶の製造方法
US7811943B2 (en) * 2004-12-22 2010-10-12 Cree, Inc. Process for producing silicon carbide crystals having increased minority carrier lifetimes
JP4604728B2 (ja) * 2005-01-14 2011-01-05 株式会社デンソー 炭化珪素単結晶の製造方法
CN100418193C (zh) * 2005-06-14 2008-09-10 中国科学院半导体研究所 制造厚膜氮化物材料的氢化物气相外延装置
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US9388509B2 (en) 2005-12-07 2016-07-12 Ii-Vi Incorporated Method for synthesizing ultrahigh-purity silicon carbide
US20070169687A1 (en) * 2006-01-26 2007-07-26 Caracal, Inc. Silicon carbide formation by alternating pulses
WO2008014449A2 (en) * 2006-07-28 2008-01-31 Caracal, Inc. Seed holder for crystal growth reactors
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
JP5332168B2 (ja) * 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
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JP4591523B2 (ja) * 2008-03-05 2010-12-01 株式会社デンソー 炭化珪素単結晶の製造装置
JP5332916B2 (ja) * 2009-06-03 2013-11-06 株式会社デンソー 炭化珪素単結晶の製造装置
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JP5481224B2 (ja) * 2010-02-19 2014-04-23 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
JP5212455B2 (ja) 2010-12-16 2013-06-19 株式会社デンソー 炭化珪素単結晶の製造装置
US9322110B2 (en) 2013-02-21 2016-04-26 Ii-Vi Incorporated Vanadium doped SiC single crystals and method thereof
JP6187372B2 (ja) * 2014-04-11 2017-08-30 株式会社デンソー 炭化珪素単結晶製造装置
US9580837B2 (en) 2014-09-03 2017-02-28 Ii-Vi Incorporated Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
JP6083766B2 (ja) * 2015-07-03 2017-02-22 株式会社エピクエスト Ｎｈ３雰囲気高温加熱装置
DE102018129492B4 (de) * 2018-11-22 2022-04-28 Ebner Industrieofenbau Gmbh Vorrichtung und Verfahren zum Züchten von Kristallen
CN113026099A (zh) * 2021-03-05 2021-06-25 广州爱思威科技股份有限公司 碳化硅单晶生长控制装置及控制方法
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Also Published As

Publication number Publication date
DE69623962D1 (de) 2002-10-31
US5704985A (en) 1998-01-06
EP0835336B2 (en) 2009-09-16
DE69623962T2 (de) 2003-01-23
DE69623962T3 (de) 2010-04-01
WO1997001658A1 (en) 1997-01-16
EP0835336A1 (en) 1998-04-15
JPH11508531A (ja) 1999-07-27
JP4121555B2 (ja) 2008-07-23
EP0835336B1 (en) 2002-09-25

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