SE9500325D0 - Device for heat shielding when SiC is grown by CVD - Google Patents

Device for heat shielding when SiC is grown by CVD

Info

Publication number
SE9500325D0
SE9500325D0 SE9500325A SE9500325A SE9500325D0 SE 9500325 D0 SE9500325 D0 SE 9500325D0 SE 9500325 A SE9500325 A SE 9500325A SE 9500325 A SE9500325 A SE 9500325A SE 9500325 D0 SE9500325 D0 SE 9500325D0
Authority
SE
Sweden
Prior art keywords
substrate
susceptor
sic
tube
shielding
Prior art date
Application number
SE9500325A
Other languages
English (en)
Inventor
Nils Nordell
Gunnar Andersson
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9500325A priority Critical patent/SE9500325D0/sv
Publication of SE9500325D0 publication Critical patent/SE9500325D0/sv
Priority to PCT/SE1996/000070 priority patent/WO1996023914A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE9500325A 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD SE9500325D0 (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE9500325A SE9500325D0 (sv) 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD
PCT/SE1996/000070 WO1996023914A1 (en) 1995-01-31 1996-01-24 DEVICE FOR HEAT SHIELDING WHEN SiC IS GROWN BY CVD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9500325A SE9500325D0 (sv) 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD

Publications (1)

Publication Number Publication Date
SE9500325D0 true SE9500325D0 (sv) 1995-01-31

Family

ID=20397014

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9500325A SE9500325D0 (sv) 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD

Country Status (2)

Country Link
SE (1) SE9500325D0 (sv)
WO (1) WO1996023914A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19940033A1 (de) * 1999-08-24 2001-05-17 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Schichten auf rotierenden Substraten in einem allseits beheizten Strömungskanal
WO2013055967A1 (en) * 2011-10-12 2013-04-18 Integrated Photovoltaic, Inc. Photovoltaic substrate
CN104291339B (zh) * 2014-09-29 2016-08-17 浙江大学 一种超薄碳化硅材料的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1646924B1 (de) * 1965-02-24 1970-06-04 Quartz & Silice Verfahren und Vorrichtung zum UEberziehen eines Fadens mit Graphit
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies
DE3485898D1 (de) * 1983-12-09 1992-10-01 Applied Materials Inc Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
IT1241922B (it) * 1990-03-09 1994-02-01 Eniricerche Spa Procedimento per realizzare rivestimenti di carburo di silicio

Also Published As

Publication number Publication date
WO1996023914A1 (en) 1996-08-08

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