SE9500325D0 - Device for heat shielding when SiC is grown by CVD - Google Patents

Device for heat shielding when SiC is grown by CVD

Info

Publication number
SE9500325D0
SE9500325D0 SE9500325A SE9500325A SE9500325D0 SE 9500325 D0 SE9500325 D0 SE 9500325D0 SE 9500325 A SE9500325 A SE 9500325A SE 9500325 A SE9500325 A SE 9500325A SE 9500325 D0 SE9500325 D0 SE 9500325D0
Authority
SE
Sweden
Prior art keywords
substrate
susceptor
sic
tube
shielding
Prior art date
Application number
SE9500325A
Other languages
Swedish (sv)
Inventor
Nils Nordell
Gunnar Andersson
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9500325A priority Critical patent/SE9500325D0/en
Publication of SE9500325D0 publication Critical patent/SE9500325D0/en
Priority to PCT/SE1996/000070 priority patent/WO1996023914A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A device for shielding the environment against the heat produced when SiC is epitaxially grown by Chemical Vapour Deposition on a substrate (9) by using a susceptor (8) heated for heating the substrate and a gas mixture fed to the substrate for the growth, comprises a tube defining a room (22) arranged to receive the susceptor and the substrate. The inner walls of the tube are at least close to the susceptor (8) coated by a thin heat-reflecting film (15), preferably a carbon film. This film may be applied to the inside of the tube by introducing a C-containing gas, which is heated until cracking. Enclosing the substrate and the susceptor in a casing (2, 14) and flushing the casing with Ar-gas is another way of shielding the environment against the heat produced by the process.
SE9500325A 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD SE9500325D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE9500325A SE9500325D0 (en) 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD
PCT/SE1996/000070 WO1996023914A1 (en) 1995-01-31 1996-01-24 DEVICE FOR HEAT SHIELDING WHEN SiC IS GROWN BY CVD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9500325A SE9500325D0 (en) 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD

Publications (1)

Publication Number Publication Date
SE9500325D0 true SE9500325D0 (en) 1995-01-31

Family

ID=20397014

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9500325A SE9500325D0 (en) 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD

Country Status (2)

Country Link
SE (1) SE9500325D0 (en)
WO (1) WO1996023914A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19940033A1 (en) * 1999-08-24 2001-05-17 Aixtron Ag Method and device for depositing layers on rotating substrates in a flow channel heated on all sides
WO2013055921A1 (en) * 2011-10-12 2013-04-18 Integrated Photovoltaic, Inc. Deposition system
CN104291339B (en) * 2014-09-29 2016-08-17 浙江大学 A kind of preparation method of ultra-thin carbofrax material

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1646924B1 (en) * 1965-02-24 1970-06-04 Quartz & Silice Method and device for coating a thread with graphite
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies
DE3485898D1 (en) * 1983-12-09 1992-10-01 Applied Materials Inc INDUCTIONALLY HEATED REACTOR FOR CHEMICAL DEPOSITION FROM THE STEAM PHASE.
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
IT1241922B (en) * 1990-03-09 1994-02-01 Eniricerche Spa PROCEDURE FOR MAKING SILICON CARBIDE COATINGS

Also Published As

Publication number Publication date
WO1996023914A1 (en) 1996-08-08

Similar Documents

Publication Publication Date Title
SE9502288D0 (en) A device and a method for epitaxially growing objects by CVD
IL129580A0 (en) Apparatus and process for controlled atmosphere chemical vapor deposition
SE9500326D0 (en) Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
AU4370996A (en) Apparatus for use with cvi/cvd processes
KR100287489B1 (en) How to form crystalline silicon carbide film at low temperature
CA2312790A1 (en) Growth of very uniform silicon carbide epitaxial layers
SE9503426D0 (en) A device for heat treatment of objects and a method for producing a susceptor
SE7613456L (en) SILICONE CARBID RATE AND PROCEDURE FOR ITS MANUFACTURE
AU538152B2 (en) Chemical vapour deposition apparatus and process
GB2141444A (en) Chemical vapor deposition of titanium nitride and like films
CA2215897A1 (en) Vacuum carburizing method and device, and carburized products
KR900017107A (en) Selective chemical vapor growth method (CVD method) and CVD apparatus using the same method
JPH0728963U (en) Chemical vapor deposition equipment
KR970060367A (en) Epitaxial Growth Method
WO1994008076A1 (en) Heteroepitaxially deposited diamond
KR950703073A (en) MOLYBDENUM ENHANCED LOW TEMPERATURE DEPOSITION OF CRYSTALLINE SILICON NITRIDE OF CRYSTALLINE SILICON
KR940001263A (en) Film forming equipment
KR910005380A (en) Chemical vapor growth apparatus and method
SE9500325D0 (en) Device for heat shielding when SiC is grown by CVD
EP1170397A3 (en) Deposition of amorphous silicon films by high density plasma CVD at low temperatures
WO1997008356A3 (en) Modified metalorganic chemical vapor deposition of group III-V thin layers
KR960015656A (en) Electron Emission Film and Its Manufacturing Method
SE9500327D0 (en) Device for epitaxially growing SiC by CVD
TW256933B (en) Method of growing smooth diamond film
Pochet et al. Practical aspects of deposition of CVD SiC and boron silicon carbide onto high temperature composites