KR970060367A - 에피탁셜 성장방법 - Google Patents

에피탁셜 성장방법 Download PDF

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Publication number
KR970060367A
KR970060367A KR1019970000292A KR19970000292A KR970060367A KR 970060367 A KR970060367 A KR 970060367A KR 1019970000292 A KR1019970000292 A KR 1019970000292A KR 19970000292 A KR19970000292 A KR 19970000292A KR 970060367 A KR970060367 A KR 970060367A
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Prior art keywords
growth method
epitaxial growth
silane
reaction vessel
boron
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KR1019970000292A
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KR100251493B1 (ko
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타다시 오하시
신이치 미타니
다카아키 혼다
Original Assignee
후지이 아키히로
도시바세라믹 가부시키가이샤
오카노 사다오
도시바기카이 가부시키가이샤
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Application filed by 후지이 아키히로, 도시바세라믹 가부시키가이샤, 오카노 사다오, 도시바기카이 가부시키가이샤 filed Critical 후지이 아키히로
Publication of KR970060367A publication Critical patent/KR970060367A/ko
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Publication of KR100251493B1 publication Critical patent/KR100251493B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 실리콘 웨이퍼 내부면 온도분포로부터 기인하는 에피탁셜층의 저항변화를 감소하고, 입자와 헤이즈를 감소시키는 에피탁셜층의 성장방법을 제공하고 있다. 이 에피탁셜 성장방법은 2∼50℃의 내부면 온도 분포를 가지는 실리콘 웨이퍼 표면에 붕소 또는 인 혼입 실리콘 에피탁셜층을 성장시키는 에피탁셜 성장방법이며, 반응용기안에 실리콘 웨이퍼를 정렬시키는 단계와, (a) 실란, (b) 실란에 첨가되는 5∼600vol%의 염화수소와, (c) 붕소 또는 인화합물을 포함하는 혼입제를 포함하는 모가스를 상기 반응용기로 공급하고, 반응용기 내를 10∼200torr의 진공도로 맞추고 웨이퍼를 900∼1,100℃로 가열함으로써 웨이퍼 표면에서 붕소 또는 인 혼입 실리콘 에피탁셜층을 성장시키는 단계를 포함한다.

Description

에피탁셜 성장방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 에피탁셜 성장방법에 사용되는 에피탁셜 성장기구를 보이는 단면도.

Claims (11)

  1. 반응 용기안의 실리콘 웨이퍼를 정렬하고; 상기 반응용기 안으로 (a) 실란, (b) 실란에 가해지는 5∼600vol%의 HCl, (c) 붕소화합물 또는 인 화합물로 구성되는 혼입제를 포함하는 모가스를 상기 반응용기로 공급하고; 상기 반응용기안을 10∼200torr의 진공도로 세팅하고, 900∼1100℃로 가열함으로써 웨이퍼 표면에 붕소 또는 인 혼입 실리콘 에피탁셜층을 성장시키는 단계;로 이루어지며, 2∼50℃의 내부면 온도분포를 가지는 실리콘 웨이퍼 표면상에서 붕소 또는 혼입 실리콘 에피탁셜층을 성장시키는 에피탁셜 성장방법.
  2. 제1항에 있어서, 실리콘 웨이퍼가 상기 반응용기안에서 바닥 주변부가 가열되는 환상 지지부재에 의해 지지되고, 차감가열되는 에피탁셜 성장방법.
  3. 제1항에 있어서, 실리콘 웨이퍼가 에피탁셜 동안 500∼2,500rpm의 속도로 회전되는 에피탁셜 성장방법.
  4. 제1항에 있어서, 염화수소의 50∼300vol%가 실란에 첨가되는 에피탁셜 성장방법.
  5. 제1항에 있어서, HCl의 100∼300vol%가 실란에 첨가되는 에피탁셜 성장방법.
  6. 제1항에 있어서, 붕소 화합물이 디보란인 에피탁셜 성장방법.
  7. 제1항에 있어서, 인화합물이 포스핀인 에피탁셜 성장방법.
  8. 제1항에 있어서, 혼입제의 첨가량이 실란에 대해 부피로 4×10-9에서 2×10-6배인 에피탁셜 성장방법.
  9. 제1항에 있어서, 모가스가 수소를 더 포함하는 에피탁셜 성장방법.
  10. 제1항에 있어서, 수소의 더욱 첨가하는 양이 실란 양에 대해 부피비로 130∼300배인 에피탁셜 성장방법.
  11. 제1항에 있어서, 웨이퍼의 저온 영역에 달하는 공급량이 고온영역으로의 공급량보다 크도록 모가스가 조절되는 에피탁셜 성장방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970000292A 1996-01-12 1997-01-08 에피탁셜 성장방법 KR100251493B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-004284 1996-01-12
JP00428496A JP3725598B2 (ja) 1996-01-12 1996-01-12 エピタキシャルウェハの製造方法
JP8-4284 1996-01-12

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KR970060367A true KR970060367A (ko) 1997-08-12
KR100251493B1 KR100251493B1 (ko) 2000-05-01

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US (1) US5904769A (ko)
EP (1) EP0784106B1 (ko)
JP (1) JP3725598B2 (ko)
KR (1) KR100251493B1 (ko)
DE (1) DE69702620T2 (ko)
TW (1) TW494148B (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217650B1 (en) 1998-06-16 2001-04-17 Komatsu Electronic Metals Co., Ltd. Epitaxial-wafer fabricating process
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6454854B1 (en) 1998-10-29 2002-09-24 Shin-Etsu Handotai Co., Ltd. Semiconductor wafer and production method therefor
JP2000138168A (ja) * 1998-10-29 2000-05-16 Shin Etsu Handotai Co Ltd 半導体ウェーハ及び気相成長装置
US6444027B1 (en) 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
JP4484185B2 (ja) * 2000-08-29 2010-06-16 コバレントマテリアル株式会社 シリコン半導体基板の化学的気相薄膜成長方法
JP4263410B2 (ja) * 2000-12-29 2009-05-13 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド オートドーピングおよび後面ハローがないエピタキシャルシリコンウエハ
JP4236243B2 (ja) * 2002-10-31 2009-03-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
US7462246B2 (en) * 2005-04-15 2008-12-09 Memc Electronic Materials, Inc. Modified susceptor for barrel reactor
JP4899445B2 (ja) * 2005-11-22 2012-03-21 信越半導体株式会社 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
US7709391B2 (en) * 2006-01-20 2010-05-04 Applied Materials, Inc. Methods for in-situ generation of reactive etch and growth specie in film formation processes
TWI354320B (en) 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
JP2007251078A (ja) 2006-03-20 2007-09-27 Nuflare Technology Inc 気相成長装置
US7566951B2 (en) * 2006-04-21 2009-07-28 Memc Electronic Materials, Inc. Silicon structures with improved resistance to radiation events
US20080314319A1 (en) * 2007-06-19 2008-12-25 Memc Electronic Materials, Inc. Susceptor for improving throughput and reducing wafer damage
US8404049B2 (en) * 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
US20090214843A1 (en) * 2008-02-26 2009-08-27 Siltronic Corporation Controlled edge resistivity in a silicon wafer
US20100098519A1 (en) * 2008-10-17 2010-04-22 Memc Electronic Materials, Inc. Support for a semiconductor wafer in a high temperature environment
US8685855B2 (en) * 2009-12-11 2014-04-01 Sumco Corporation Tray for CVD and method for forming film using same
JP5615102B2 (ja) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー 半導体製造方法及び半導体製造装置
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
US10361097B2 (en) 2012-12-31 2019-07-23 Globalwafers Co., Ltd. Apparatus for stressing semiconductor substrates
DE102015224446A1 (de) 2015-12-07 2017-06-08 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
US10249493B2 (en) 2015-12-30 2019-04-02 Siltronic Ag Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
DE102018221605A1 (de) 2018-12-13 2020-06-18 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1002899A (en) * 1962-05-16 1965-09-02 Siemens Ag Improvements in or relating to the preparation of monocrystalline semiconductor materials
NL7206877A (ko) * 1972-05-20 1973-11-22
JPS58182819A (ja) * 1982-04-20 1983-10-25 Toshiba Corp 加熱基台
US5096534A (en) * 1987-06-24 1992-03-17 Epsilon Technology, Inc. Method for improving the reactant gas flow in a reaction chamber
US5198071A (en) * 1991-11-25 1993-03-30 Applied Materials, Inc. Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer

Also Published As

Publication number Publication date
JP3725598B2 (ja) 2005-12-14
EP0784106B1 (en) 2000-07-26
US5904769A (en) 1999-05-18
DE69702620T2 (de) 2001-04-12
DE69702620D1 (de) 2000-08-31
EP0784106A1 (en) 1997-07-16
TW494148B (en) 2002-07-11
JPH09194296A (ja) 1997-07-29
KR100251493B1 (ko) 2000-05-01

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