GB1002899A - Improvements in or relating to the preparation of monocrystalline semiconductor materials - Google Patents
Improvements in or relating to the preparation of monocrystalline semiconductor materialsInfo
- Publication number
- GB1002899A GB1002899A GB18803/62A GB1880362A GB1002899A GB 1002899 A GB1002899 A GB 1002899A GB 18803/62 A GB18803/62 A GB 18803/62A GB 1880362 A GB1880362 A GB 1880362A GB 1002899 A GB1002899 A GB 1002899A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- reaction gas
- conductor material
- hydrogen
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 15
- 239000000463 material Substances 0.000 title abstract 13
- 239000012495 reaction gas Substances 0.000 abstract 13
- 239000000126 substance Substances 0.000 abstract 10
- 238000000151 deposition Methods 0.000 abstract 8
- 229910000039 hydrogen halide Inorganic materials 0.000 abstract 8
- 239000012433 hydrogen halide Substances 0.000 abstract 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052796 boron Inorganic materials 0.000 abstract 6
- 230000008021 deposition Effects 0.000 abstract 6
- 239000001257 hydrogen Substances 0.000 abstract 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 5
- 150000001875 compounds Chemical class 0.000 abstract 5
- 229910052698 phosphorus Inorganic materials 0.000 abstract 5
- 239000011574 phosphorus Substances 0.000 abstract 5
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 4
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 150000002431 hydrogen Chemical class 0.000 abstract 3
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 abstract 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 3
- 229910015844 BCl3 Inorganic materials 0.000 abstract 2
- 238000005137 deposition process Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 239000007792 gaseous phase Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 150000002366 halogen compounds Chemical class 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 150000003377 silicon compounds Chemical class 0.000 abstract 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 abstract 1
- -1 boron halide Chemical class 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 239000005049 silicon tetrachloride Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A doped monocrystal of a silicon or germanium semi-conductor material is made by simultaneously depositing said semi-conductor material and one or more doping substances selected from the elements of Group III or V of the Periodic System from the gaseous phase on to a heated carrier or the semi-conductor material. This is effected by passing a reaction gas comprising a gaseous halogen compound of the semi-conductor material, hydrogen, and a gaseous compound of one or more doping substances over the heated carrier. Hydrogen halide is added to the "reaction gas" during at least part of the deposition process. The ratio of semi-conductor material deposited to doping substance deposited is controlled by varying the amount of hydrogen halide added and/or by varying the mole ratio of semiconductor compound to hydrogen in the reaction gas. Specified doping substances are boron, phosphorus, and indium. In an example, the "reaction gas" comprised SiCl4, H2, BCl3 and PCl5. A p-conductive layer due to complete deposition of boron together with phosphorus was formed when no hydrogen halide was present in the reaction gas but when it was added thereto a n-conductive layer due solely to deposition of phosphorus was formed. Data for the deposition of consecutive layers of p, n, and p+ conductivity types on a silicon crystal are tabulated. Specifications 926,807, 943,360 and 960,892 are referred to.ALSO:A doped mono crystal of a silicon or germanium semi-conductor material is made by simultaneously depositing said semi-conductor material and one or more doping substances selected from the elements of Group III or Group V of the Period System from the gaseous phase on to a heated carrier of the semi-conductor material. This is effected by passing a "reaction gas" comprising a gaseous halogen compound of the semi-conductor material, hydrogen, and a gaseous compound of one or more doping substances over the heated carrier. Hydrogen halide is added to the "reaction gas" during at least part of the deposition process. The ratio of semi-conductor material deposited to doping substance deposited is controlled by varying the amount of hydrogen halide added and/or by varying the mole ratio of semi-conductor compound to hydrogen in the reaction gas. Specified doping substances are boron phosphorus, and indium. In an example, the "reaction gas" comprised silicon tetrachloride, hydrogen, boron trichloride, and phosphorus pentachloride. The mole percentage ratios of the doping substance to semi-conductor material were 5 x 10-4 for BCl3/SiCl4 and 2.5 x 10-6\h for PCl5/SiCl4. A p-conductive layer of resistivity 0.15 ohm./cm., due to complete deposition of boron together with phosphorus, was formed when no hydrogen halide was added to the "reaction gas"; but when 1 mole per cent HCl/H2 was added, a n-conductive layer of resistivity 4 ohm./cm. due solely to deposition of phosphorus was formed. Variation of the mole ratio of SiCl4/H2 in the "reaction gas" could also be made to produce the above effects. Data for the deposition of consecutive layers of p, n, and p+ conductivity types on a silicon crystal, using the abovementioned proportions of doping compounds, are tabulated. Diagrams (not shown) illustrate (a) the effect, at 1400 DEG K., of change in the mole ratio of silicon compound to hydrogen (which may be brought about by hydrogen halide addition) upon the mole percentage ratio of boron halide to silicon compound in the "reaction gas" and on the atom percentage ratio of boron to silicon in the deposited layer; (b) the dependence of the deposited quantities of doping substance, boron, and semi-conductor material, silicon, on the surface temperature of the crystal and the mole percentage of hydrogen halide added to the reaction gas. Specifications 926,807, 943,360 and 960,892 are referred to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB18803/62A GB1002899A (en) | 1962-05-16 | 1962-05-16 | Improvements in or relating to the preparation of monocrystalline semiconductor materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB18803/62A GB1002899A (en) | 1962-05-16 | 1962-05-16 | Improvements in or relating to the preparation of monocrystalline semiconductor materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1002899A true GB1002899A (en) | 1965-09-02 |
Family
ID=10118693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB18803/62A Expired GB1002899A (en) | 1962-05-16 | 1962-05-16 | Improvements in or relating to the preparation of monocrystalline semiconductor materials |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1002899A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0784106A1 (en) * | 1996-01-12 | 1997-07-16 | Toshiba Ceramics Co., Ltd. | Epitaxial growth method |
| US7772097B2 (en) | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
-
1962
- 1962-05-16 GB GB18803/62A patent/GB1002899A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0784106A1 (en) * | 1996-01-12 | 1997-07-16 | Toshiba Ceramics Co., Ltd. | Epitaxial growth method |
| US5904769A (en) * | 1996-01-12 | 1999-05-18 | Toshiba Ceramics Co., Ltd. | Epitaxial growth method |
| US7772097B2 (en) | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
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