DE69702620D1 - Verfahren zur Epitaxiezüchtung - Google Patents

Verfahren zur Epitaxiezüchtung

Info

Publication number
DE69702620D1
DE69702620D1 DE69702620T DE69702620T DE69702620D1 DE 69702620 D1 DE69702620 D1 DE 69702620D1 DE 69702620 T DE69702620 T DE 69702620T DE 69702620 T DE69702620 T DE 69702620T DE 69702620 D1 DE69702620 D1 DE 69702620D1
Authority
DE
Germany
Prior art keywords
epitaxial growth
growth method
epitaxial
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69702620T
Other languages
English (en)
Other versions
DE69702620T2 (de
Inventor
Tadashi Ohashi
Shinichi Mitani
Takaaki Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Nuflare Technology Inc
Original Assignee
Toshiba Machine Co Ltd
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd, Toshiba Ceramics Co Ltd filed Critical Toshiba Machine Co Ltd
Application granted granted Critical
Publication of DE69702620D1 publication Critical patent/DE69702620D1/de
Publication of DE69702620T2 publication Critical patent/DE69702620T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69702620T 1996-01-12 1997-01-07 Verfahren zur Epitaxiezüchtung Expired - Fee Related DE69702620T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00428496A JP3725598B2 (ja) 1996-01-12 1996-01-12 エピタキシャルウェハの製造方法

Publications (2)

Publication Number Publication Date
DE69702620D1 true DE69702620D1 (de) 2000-08-31
DE69702620T2 DE69702620T2 (de) 2001-04-12

Family

ID=11580242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69702620T Expired - Fee Related DE69702620T2 (de) 1996-01-12 1997-01-07 Verfahren zur Epitaxiezüchtung

Country Status (6)

Country Link
US (1) US5904769A (de)
EP (1) EP0784106B1 (de)
JP (1) JP3725598B2 (de)
KR (1) KR100251493B1 (de)
DE (1) DE69702620T2 (de)
TW (1) TW494148B (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217650B1 (en) 1998-06-16 2001-04-17 Komatsu Electronic Metals Co., Ltd. Epitaxial-wafer fabricating process
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
JP2000138168A (ja) * 1998-10-29 2000-05-16 Shin Etsu Handotai Co Ltd 半導体ウェーハ及び気相成長装置
US6454854B1 (en) 1998-10-29 2002-09-24 Shin-Etsu Handotai Co., Ltd. Semiconductor wafer and production method therefor
US6444027B1 (en) 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
DE60127252T2 (de) * 2000-05-08 2007-12-20 Memc Electronic Materials, Inc. Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo
JP4484185B2 (ja) * 2000-08-29 2010-06-16 コバレントマテリアル株式会社 シリコン半導体基板の化学的気相薄膜成長方法
JP4236243B2 (ja) * 2002-10-31 2009-03-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
US7462246B2 (en) * 2005-04-15 2008-12-09 Memc Electronic Materials, Inc. Modified susceptor for barrel reactor
JP4899445B2 (ja) * 2005-11-22 2012-03-21 信越半導体株式会社 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
US7709391B2 (en) * 2006-01-20 2010-05-04 Applied Materials, Inc. Methods for in-situ generation of reactive etch and growth specie in film formation processes
TWI354320B (en) 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
JP2007251078A (ja) 2006-03-20 2007-09-27 Nuflare Technology Inc 気相成長装置
US7566951B2 (en) * 2006-04-21 2009-07-28 Memc Electronic Materials, Inc. Silicon structures with improved resistance to radiation events
US20080314319A1 (en) * 2007-06-19 2008-12-25 Memc Electronic Materials, Inc. Susceptor for improving throughput and reducing wafer damage
US8404049B2 (en) * 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
US20090214843A1 (en) * 2008-02-26 2009-08-27 Siltronic Corporation Controlled edge resistivity in a silicon wafer
US20100098519A1 (en) * 2008-10-17 2010-04-22 Memc Electronic Materials, Inc. Support for a semiconductor wafer in a high temperature environment
WO2011070741A1 (ja) * 2009-12-11 2011-06-16 株式会社Sumco Ｃｖｄ用トレーおよびそれを用いた成膜方法
JP5615102B2 (ja) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー 半導体製造方法及び半導体製造装置
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
US9583363B2 (en) 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial distension
DE102015224446A1 (de) 2015-12-07 2017-06-08 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
US10249493B2 (en) 2015-12-30 2019-04-02 Siltronic Ag Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
DE102018221605A1 (de) 2018-12-13 2020-06-18 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
WO2024202965A1 (ja) * 2023-03-28 2024-10-03 株式会社Sumco エピタキシャルシリコンウェーハ及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1002899A (en) * 1962-05-16 1965-09-02 Siemens Ag Improvements in or relating to the preparation of monocrystalline semiconductor materials
NL7206877A (de) * 1972-05-20 1973-11-22
JPS58182819A (ja) * 1982-04-20 1983-10-25 Toshiba Corp 加熱基台
US5096534A (en) * 1987-06-24 1992-03-17 Epsilon Technology, Inc. Method for improving the reactant gas flow in a reaction chamber
US5198071A (en) * 1991-11-25 1993-03-30 Applied Materials, Inc. Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer

Also Published As

Publication number Publication date
DE69702620T2 (de) 2001-04-12
EP0784106B1 (de) 2000-07-26
TW494148B (en) 2002-07-11
EP0784106A1 (de) 1997-07-16
US5904769A (en) 1999-05-18
KR970060367A (ko) 1997-08-12
JPH09194296A (ja) 1997-07-29
KR100251493B1 (ko) 2000-05-01
JP3725598B2 (ja) 2005-12-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NUFLARE TECHNOLOGY, INC., NUMAZU, SHIZUOKA, JP

Owner name: TOSHIBA CERAMICS CO., LTD., TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: COVALENT MATERIALS CORP., TOKYO, JP

Owner name: NUFLARE TECHNOLOGY, INC., NUMAZU, SHIZUOKA, JP

8339 Ceased/non-payment of the annual fee