KR910005380A - 화학기상성장장치 및 방법 - Google Patents

화학기상성장장치 및 방법 Download PDF

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KR910005380A
KR910005380A KR1019900012735A KR900012735A KR910005380A KR 910005380 A KR910005380 A KR 910005380A KR 1019900012735 A KR1019900012735 A KR 1019900012735A KR 900012735 A KR900012735 A KR 900012735A KR 910005380 A KR910005380 A KR 910005380A
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substrate
chemical vapor
gas
reaction chamber
raw material
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KR940001645B1 (ko
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다쓰시 하라
노부히로 미사와
도시야 스즈끼
다까유끼 오오바
후미다께 미에노
아끼오 야마구찌
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세끼자와 다다시
후지쓰 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

화학기상성장장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 제1실시예에 의한 CVD 장치의 구조를 나타내는 개략도.

Claims (12)

  1. 화학기상성장공정을 수행하는 공간을 한정하며 또한 배기용 배기유니트(37)에 연결하기에 적합한 배기구(32,37a)를 갖고 있는 반응실(36)과, 재료막을 성정시킬 기판(33)을 고정시키기위해 상기 반응실내에 구성되는 고정수단(34)과, 상기 고정수단상에 기판을 고정시키기위한 고정수단을 제어되는 온도로 가열하기위한 히터수단(35)과, 상기 반응실내로 하나이상의 원료가스들을 도입하기위해 상기 반응실내에 구성되는 가스인입수단(1,1a-1c)과, 상기 원료가스는 기판의 표면부근에서 행해지는 화학반응시 재료막을 생성하는 반응제종들을 포함하며, 그리고 상기 반응실내의 원료 가스의 분산을 제어하기위해 상기 반응실내의 가스인입수단상에 구성되는 원료가스 분산수단(2,2')를 포함하는 기판의 일부분상에 선택적으로 재료를 성장시키기위한 화학기상성장장치에서, 상기 원료가스 분산수단은 상기 반응실의 공간내에서 기판을 에워싸는 부공간(2a)을 한정하되, 기판의 표면에 수직한 방향에서 거리(D)만큼 격리시키고, 상기 거리는 화학기상성장공정을 행하는 조건하에서 반응실의 공간내부에 실현된 원료가스의 평균 자유 공정의 약 1/2 이하로 하며, 또한 상기 기판의 표면에서의 화학반응의 결과로서 형성되는 부생성물 원료가스들을 자유로이 통과시키기 위해 상기 원료가스 분산수단내부에 부공간을 상기 반응실의 나머지 공간과 유통시키기 위한 개구(2c)가 형성되어 있는 것이 특징인 화학기상성장장치.
  2. 제1항에 있어서, 상기 가스인입수단은 반응실(36)내로 연장되는 튜브(1)를 포함하며, 상기 원료가스 분산수단은 상기 튜브를 통해 부공간(2a)내로 도입되어 기판(33)에 대해 다시 화학반응을 시킴이 없이 기판의 표면에서 반사되도록 칼라부재로서 튜브상에 구성되는 반사판(2,2')을 포함하는 것이 특징인 화학기상성장장치.
  3. 제2항에서, 상기 반사판(2)은 상기 반응실내에 도입된 원료가스와 실질적으로 반응하지 않는 물질로 된 것이 특징인 화학기상 성장장치.
  4. 제2 또는 3항에서, 상기 반사판(2)은 산화실리콘으로된 것이 특징인 화학기상성장장치.
  5. 제2항에서, 상기 반사판(2)은 기판(33)과 대향하는 오목내면(2b)을 갖는 것이 특징인 화학기상성장장치.
  6. 제2항에서, 상기 반사판(2')은 기판(33)과 대향하는 평평한 표면을 갖는 것이 특징인 화학기상성장장치.
  7. 제2항에서, 상기 반사판은 기판이 균일하게 가열되도록 기판으로 다시 적외선을 반사시키기 위한 반사수단을 더 포함하는 것이 특징인 화학기상성장장치.
  8. 제2항에서, 상기 반사수단은 상기 기판에 대향하는 상기 반사판의 내면과 평행하게 연재되는 반사표면을 제공하기위한 반사판(2)상에 제공되는 금속막(2d)으로된 것이 특징인 화학기상성장장치.
  9. 제1항에서, 상기 원료가스 분산수단(2,2')은 상기 부공간(2a)의 상기 거리(D)가 부공간내의 원료가스의 평균자유공정길이의 약 1/3이 되도록 설비되는 것이 특징인 화학기상성장장치.
  10. 제1항에서, 상기 가스인입수단은 상기 원료가스 분산수단(2')이 장치되는 복수의 튜브(1a-1c)로 된 것이 특징인 화학기상 성장장치.
  11. 10-3Torr이하의 조절성장압력에서 화학 기상성장공정에 의해 기판상에 형성된 실리콘의 노출영역상에 선택적으로 텅스텐막을 성장시키기위한 방법에 있어서, 6불화 텅스텐을 필수성분으로하여 구성되는 제1원료가스를 도입하여 상기 실리콘의 노출영역과 접촉시키는 단계와, 상기 제1원료가스를 200℃와 300℃간의 범위내에 온도에서 상기 노출영역내의 실리콘과 반응시켜줌으로서 실리콘에 의해 6불화 텅스텐의 환원결과로서 실리콘의 상기 노출영역상에 텅스텐이 성장되어 제1텅스텐막을 형성단계와, 상기 제1원료가스 반응단계 후 상기 제1원료가스이외에 제2원료가스를 도입하여 상기 제1텅스텐막을 포함하는 기판과 접촉시키는 단계와, 상기 제2원료가스의화학반응의 결과로서 상기 제1텅스텐 막상에 텅스텐을 성장시켜 상기 제1텅스텐막상에 제2텅스텐막을 형성하는 한편, 실리콘과 상기 제1원료가스의 반응의 결과로서 연속적으로 텅스텐을 성장시키는 단계를 포함하는 것이 특징인 화학기상성장방법.
  12. 제11항에서, 상기 제2원료가스는 6불화 텅스텐과 실란을 포함하며, 상기 제2원료가스의 화학반응은 상기 제2원료가스내에 함유된 실란에 의해 상기 제2원료가스내에 함유된 6불화 텅스텐의 화학적 환원을 포함하는 것이 특징인 화학기상 성장방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900012735A 1989-08-18 1990-08-18 화학기상 성장장치 및 방법 KR940001645B1 (ko)

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JP1-213477 1989-08-18
JP1213477A JP2506451B2 (ja) 1989-08-18 1989-08-18 化学気相成長装置及び化学気相成長法

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US (1) US5264038A (ko)
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EP0418554A3 (en) 1991-07-17
JPH0376220A (ja) 1991-04-02
DE69017810D1 (de) 1995-04-20
US5264038A (en) 1993-11-23
EP0418554A2 (en) 1991-03-27
KR940001645B1 (ko) 1994-02-28
EP0418554B1 (en) 1995-03-15
JP2506451B2 (ja) 1996-06-12

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