DE3485898D1 - Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase. - Google Patents

Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.

Info

Publication number
DE3485898D1
DE3485898D1 DE8484308555T DE3485898T DE3485898D1 DE 3485898 D1 DE3485898 D1 DE 3485898D1 DE 8484308555 T DE8484308555 T DE 8484308555T DE 3485898 T DE3485898 T DE 3485898T DE 3485898 D1 DE3485898 D1 DE 3485898D1
Authority
DE
Germany
Prior art keywords
inductionally
chemical deposition
steam phase
heated reactor
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484308555T
Other languages
English (en)
Inventor
John G Martin
Walter C Benzing
Robert Graham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE3485898D1 publication Critical patent/DE3485898D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
DE8484308555T 1983-12-09 1984-12-07 Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase. Expired - Lifetime DE3485898D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56008583A 1983-12-09 1983-12-09

Publications (1)

Publication Number Publication Date
DE3485898D1 true DE3485898D1 (de) 1992-10-01

Family

ID=24236310

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484308555T Expired - Lifetime DE3485898D1 (de) 1983-12-09 1984-12-07 Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.

Country Status (4)

Country Link
EP (1) EP0147967B1 (de)
JP (1) JPS60186013A (de)
KR (1) KR850005146A (de)
DE (1) DE3485898D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1215444B (it) * 1987-04-24 1990-02-14 L P E S P A Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
IT1209570B (it) * 1984-07-19 1989-08-30 Lpe Spa Perfezionamento nei reattori epitassiali.
JPH0713943B2 (ja) * 1985-02-22 1995-02-15 株式会社東芝 半導体気相成長装置
JPH07105349B2 (ja) * 1985-11-08 1995-11-13 フオ−カス・セミコンダクタ・システムズ・インコ−ポレイテツド 薄膜付着方法と薄膜付着装置と化学蒸着装置
EP0237206B1 (de) * 1986-03-03 1991-09-11 Applied Materials, Inc. Goldschutzschicht und Verfahren zur Herstellung
JPS63144513A (ja) * 1986-12-09 1988-06-16 Nkk Corp バレル型エピタキシヤル成長装置
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
JPH01125923A (ja) * 1987-11-11 1989-05-18 Sumitomo Chem Co Ltd 気相成長装置
US4858558A (en) * 1988-01-25 1989-08-22 Nippon Kokan Kabushiki Kaisha Film forming apparatus
EP0330708B1 (de) * 1988-02-29 1994-05-04 Nippon Kokan Kabushiki Kaisha Vorrichtung zur Herstellung von dünnen Filmen
FR2655772B1 (fr) * 1989-12-08 1992-01-24 Thomson Composants Microondes Dispositif antipollution pour bati vertical de depot en phase gazeuse.
DE4017508A1 (de) * 1990-05-31 1991-12-05 Schlafhorst & Co W Fadenspeicher fuer eine textilmaschine
JPH04175294A (ja) * 1990-11-09 1992-06-23 Fujitsu Ltd 気相成長装置
SE9500325D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Device for heat shielding when SiC is grown by CVD
US5518549A (en) * 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
ITMI20031841A1 (it) * 2003-09-25 2005-03-26 Lpe Spa Suscettore per reattori epitassiali ad induzione.
CN101031671A (zh) * 2004-10-01 2007-09-05 Lpe公司 外延反应器冷却方法及由此冷却的反应器
ITMI20050645A1 (it) * 2005-04-14 2006-10-15 Lpe Spa Suscettori per reattori epitassiali e utensile per maneggiarlo
IT1392068B1 (it) * 2008-11-24 2012-02-09 Lpe Spa Camera di reazione di un reattore epitassiale
IT1393695B1 (it) * 2009-04-17 2012-05-08 Lpe Spa Camera di reazione di un reattore epitassiale e reattore che la utilizza
CN103540914B (zh) * 2013-09-24 2016-06-15 中国科学院苏州纳米技术与纳米仿生研究所 一种使用射频加热的桶式cvd设备反应室
JP6662520B2 (ja) * 2015-10-02 2020-03-11 国立大学法人山形大学 内面コーティング方法及び装置
CN112271155A (zh) * 2020-10-22 2021-01-26 北京北方华创微电子装备有限公司 承载装置及半导体工艺设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method
US3659552A (en) * 1966-12-15 1972-05-02 Western Electric Co Vapor deposition apparatus
US3539759A (en) * 1968-11-08 1970-11-10 Ibm Susceptor structure in silicon epitaxy
AU3932872A (en) * 1971-03-12 1973-08-30 Unisearch Limited Improvements in furnaces for production of plana transistors and integrated circuits
JPS52136573A (en) * 1976-05-10 1977-11-15 Matsushita Electronics Corp Cvd apparatus
JPS54134555A (en) * 1978-04-11 1979-10-19 Mitsubishi Electric Corp Heat treatment unit
JPS5649518A (en) * 1979-09-28 1981-05-06 Hitachi Ltd Wafer treating desk
JPS5681924A (en) * 1979-12-10 1981-07-04 Toshiba Corp Susceptor for vertical type high frequency heating vapor phase growing system
JPS57149727A (en) * 1981-03-11 1982-09-16 Toshiba Corp Heating base of a vapor growth semiconductor
JPS58101422A (ja) * 1981-12-12 1983-06-16 Toshiba Corp 気相成長反応炉用サセプタ
JPS58182819A (ja) * 1982-04-20 1983-10-25 Toshiba Corp 加熱基台

Also Published As

Publication number Publication date
EP0147967B1 (de) 1992-08-26
EP0147967A3 (en) 1988-03-16
KR850005146A (ko) 1985-08-21
JPS60186013A (ja) 1985-09-21
EP0147967A2 (de) 1985-07-10

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