IT1209570B - Perfezionamento nei reattori epitassiali. - Google Patents

Perfezionamento nei reattori epitassiali.

Info

Publication number
IT1209570B
IT1209570B IT8421960A IT2196084A IT1209570B IT 1209570 B IT1209570 B IT 1209570B IT 8421960 A IT8421960 A IT 8421960A IT 2196084 A IT2196084 A IT 2196084A IT 1209570 B IT1209570 B IT 1209570B
Authority
IT
Italy
Prior art keywords
improvement
epitaxial reactors
epitaxial
reactors
Prior art date
Application number
IT8421960A
Other languages
English (en)
Other versions
IT8421960A0 (it
Inventor
Vittorio Pozzetti
Franco Preti
Piergiovanni Poggi
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to IT8421960A priority Critical patent/IT1209570B/it
Publication of IT8421960A0 publication Critical patent/IT8421960A0/it
Priority to CH2789/85A priority patent/CH666140A5/it
Priority to FR8510992A priority patent/FR2567921B1/fr
Priority to JP60157106A priority patent/JPH0644557B2/ja
Priority to NL8502087A priority patent/NL8502087A/nl
Priority to DE19853525870 priority patent/DE3525870A1/de
Priority to US07/073,483 priority patent/US4858557A/en
Application granted granted Critical
Publication of IT1209570B publication Critical patent/IT1209570B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
IT8421960A 1984-07-19 1984-07-19 Perfezionamento nei reattori epitassiali. IT1209570B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT8421960A IT1209570B (it) 1984-07-19 1984-07-19 Perfezionamento nei reattori epitassiali.
CH2789/85A CH666140A5 (it) 1984-07-19 1985-06-28 Reattore epitassiale con campana di quarzo e suscettore di grafite.
FR8510992A FR2567921B1 (fr) 1984-07-19 1985-07-18 Perfectionnements aux reacteurs epitaxiques
JP60157106A JPH0644557B2 (ja) 1984-07-19 1985-07-18 エピタキシー反応器
NL8502087A NL8502087A (nl) 1984-07-19 1985-07-19 Reactievat.
DE19853525870 DE3525870A1 (de) 1984-07-19 1985-07-19 Epitaxialreaktor
US07/073,483 US4858557A (en) 1984-07-19 1987-07-15 Epitaxial reactors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8421960A IT1209570B (it) 1984-07-19 1984-07-19 Perfezionamento nei reattori epitassiali.

Publications (2)

Publication Number Publication Date
IT8421960A0 IT8421960A0 (it) 1984-07-19
IT1209570B true IT1209570B (it) 1989-08-30

Family

ID=11189425

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8421960A IT1209570B (it) 1984-07-19 1984-07-19 Perfezionamento nei reattori epitassiali.

Country Status (6)

Country Link
JP (1) JPH0644557B2 (it)
CH (1) CH666140A5 (it)
DE (1) DE3525870A1 (it)
FR (1) FR2567921B1 (it)
IT (1) IT1209570B (it)
NL (1) NL8502087A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1215444B (it) * 1987-04-24 1990-02-14 L P E S P A Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
JPS636725U (it) * 1986-07-01 1988-01-18
DE3827506C1 (en) * 1988-08-12 1990-01-11 Marino 8011 Baldham De Pradetto Device and method for epitaxial deposition of especially semiconductor material onto silicon wafers from the gaseous state
IT1392068B1 (it) * 2008-11-24 2012-02-09 Lpe Spa Camera di reazione di un reattore epitassiale

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424298A (en) * 1967-03-22 1969-01-28 Price Wilson Ltd Price Wilson Ammunition holder
US3699398A (en) * 1971-10-12 1972-10-17 Reed A Newmeyer Sensor for vehicular traffic counters
DD96852A1 (it) * 1972-05-09 1973-04-12
US4284867A (en) * 1979-02-09 1981-08-18 General Instrument Corporation Chemical vapor deposition reactor with infrared reflector
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
JPS59111997A (ja) * 1982-12-14 1984-06-28 Kyushu Denshi Kinzoku Kk エピタキシヤル成長装置
DE3485898D1 (de) * 1983-12-09 1992-10-01 Applied Materials Inc Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
DD221973A1 (de) * 1984-03-20 1985-05-08 Goerlitz Waggonbau Veb Fussboden fuer schienenfahrzeuge, insbesondere trieb- und reisezugwagen

Also Published As

Publication number Publication date
JPH0644557B2 (ja) 1994-06-08
FR2567921B1 (fr) 1988-04-15
JPS6136924A (ja) 1986-02-21
IT8421960A0 (it) 1984-07-19
CH666140A5 (it) 1988-06-30
FR2567921A1 (fr) 1986-01-24
DE3525870A1 (de) 1986-01-23
NL8502087A (nl) 1986-02-17

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730