IT1392068B1 - Camera di reazione di un reattore epitassiale - Google Patents

Camera di reazione di un reattore epitassiale

Info

Publication number
IT1392068B1
IT1392068B1 ITMI2008A002092A ITMI20082092A IT1392068B1 IT 1392068 B1 IT1392068 B1 IT 1392068B1 IT MI2008A002092 A ITMI2008A002092 A IT MI2008A002092A IT MI20082092 A ITMI20082092 A IT MI20082092A IT 1392068 B1 IT1392068 B1 IT 1392068B1
Authority
IT
Italy
Prior art keywords
reaction chamber
epitaxial reactor
epitaxial
reactor
chamber
Prior art date
Application number
ITMI2008A002092A
Other languages
English (en)
Inventor
Franco Preti
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=41112787&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1392068(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to ITMI2008A002092A priority Critical patent/IT1392068B1/it
Priority to EP09798951.1A priority patent/EP2367964B1/en
Priority to PCT/IB2009/007505 priority patent/WO2010058269A1/en
Priority to CN200980146751.1A priority patent/CN102224277B/zh
Priority to JP2011536963A priority patent/JP5600324B2/ja
Priority to US13/131,011 priority patent/US20110229378A1/en
Publication of ITMI20082092A1 publication Critical patent/ITMI20082092A1/it
Application granted granted Critical
Publication of IT1392068B1 publication Critical patent/IT1392068B1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
ITMI2008A002092A 2008-11-24 2008-11-24 Camera di reazione di un reattore epitassiale IT1392068B1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
ITMI2008A002092A IT1392068B1 (it) 2008-11-24 2008-11-24 Camera di reazione di un reattore epitassiale
EP09798951.1A EP2367964B1 (en) 2008-11-24 2009-11-20 Reaction chamber of an epitaxial reactor
PCT/IB2009/007505 WO2010058269A1 (en) 2008-11-24 2009-11-20 Reaction chamber of an epitaxial reactor
CN200980146751.1A CN102224277B (zh) 2008-11-24 2009-11-20 外延反应器的反应室
JP2011536963A JP5600324B2 (ja) 2008-11-24 2009-11-20 エピタキシャル反応器の反応室
US13/131,011 US20110229378A1 (en) 2008-11-24 2009-11-20 Reaction Chamber of an Epitaxial Reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI2008A002092A IT1392068B1 (it) 2008-11-24 2008-11-24 Camera di reazione di un reattore epitassiale

Publications (2)

Publication Number Publication Date
ITMI20082092A1 ITMI20082092A1 (it) 2010-05-25
IT1392068B1 true IT1392068B1 (it) 2012-02-09

Family

ID=41112787

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2008A002092A IT1392068B1 (it) 2008-11-24 2008-11-24 Camera di reazione di un reattore epitassiale

Country Status (6)

Country Link
US (1) US20110229378A1 (it)
EP (1) EP2367964B1 (it)
JP (1) JP5600324B2 (it)
CN (1) CN102224277B (it)
IT (1) IT1392068B1 (it)
WO (1) WO2010058269A1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108411362B (zh) * 2017-02-09 2020-03-31 北京北方华创微电子装备有限公司 腔室及外延生长设备

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097622A (ja) * 1983-11-01 1985-05-31 Toshiba Mach Co Ltd エピタキシヤル装置
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
EP0147967B1 (en) * 1983-12-09 1992-08-26 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
IT1209570B (it) * 1984-07-19 1989-08-30 Lpe Spa Perfezionamento nei reattori epitassiali.
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
JPH05509132A (ja) * 1990-05-18 1993-12-16 ヒトコ　カーボン　コンポジッツ　インコーポレイテッド 化学蒸着法のための素材
DE4338807C1 (de) 1993-11-12 1995-01-26 Heraeus Quarzglas Formkörper mit hohem Gehalt an Siliziumdioxid und Verfahren zur Herstellung solcher Formkörper
CN1188823A (zh) * 1996-11-04 1998-07-29 通用电气公司 半导体圆片的热处理器
CN1067446C (zh) * 1998-12-25 2001-06-20 清华大学 超高真空化学气相淀积外延系统
US6342691B1 (en) * 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
US6666924B1 (en) * 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
JP4374156B2 (ja) * 2000-09-01 2009-12-02 日本碍子株式会社 Ｉｉｉ−ｖ族窒化物膜の製造装置及び製造方法
JP3859072B2 (ja) * 2001-03-08 2006-12-20 信越半導体株式会社 熱線反射材料及びそれを用いた加熱装置
KR20020080954A (ko) * 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
US7563512B2 (en) * 2004-08-23 2009-07-21 Heraeus Quarzglas Gmbh & Co. Kg Component with a reflector layer and method for producing the same
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
US20070295275A1 (en) * 2004-10-01 2007-12-27 Vincenzo Ogliari Epitaxial Reactor Cooling Method and Reactor Cooled Thereby
ITMI20051308A1 (it) * 2005-07-11 2007-01-12 Milano Politecnico Metodo e reattore per crescere cristalli
JP5117856B2 (ja) * 2005-08-05 2013-01-16 株式会社日立国際電気 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法
JP4994724B2 (ja) * 2006-07-07 2012-08-08 株式会社東芝 成膜装置及び成膜方法
DE102006046619A1 (de) * 2006-09-29 2008-04-03 Heraeus Quarzglas Gmbh & Co. Kg Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers
DE102006052512A1 (de) * 2006-11-06 2008-05-08 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung von opakem Quarzglas, nach dem Verfahren erhaltenes Halbzeug sowie daraus hergestelltes Bauteil
JP5043776B2 (ja) * 2008-08-08 2012-10-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20110229378A1 (en) 2011-09-22
CN102224277B (zh) 2014-03-12
CN102224277A (zh) 2011-10-19
JP2012510151A (ja) 2012-04-26
JP5600324B2 (ja) 2014-10-01
EP2367964A1 (en) 2011-09-28
ITMI20082092A1 (it) 2010-05-25
WO2010058269A1 (en) 2010-05-27
EP2367964B1 (en) 2014-04-30

Similar Documents

Publication Publication Date Title
IT1393695B1 (it) Camera di reazione di un reattore epitassiale e reattore che la utilizza
SMT201600267B (it) Inibitori di syk imidazopirazinici
SMT201600293B (it) Composti chimici
EP2353176A4 (en) REACTION CHAMBER
SMT201600008B (it) Composti di piridazinone
DOP2012000045A (es) Compuestos químicos
DK2593449T3 (da) Fremgangsmåde til syntese af benzothiadiazolforbindelse
DK2662352T3 (da) Fremgangsmåde til fremstilling af phenylacetamidforbindelse
SMT201400023B (it) Analoghi di buprenorfina
DK3329775T3 (da) Fremgangsmåder til syntese af diarylthiohydantoin- og diarylhydantoinforbindelser
BRPI1008051A2 (pt) câmara de confirmação de retorno arterial
ZA201104749B (en) Benzonaphtyridine compounds used as inhibitors of autotaxin
BRPI0920608A2 (pt) compostos quimicos
CR20120297A (es) Espironucleósidos uracílicos oxetánicos
BRPI0914775A2 (pt) compostos de fenila dissubstituídos
ITRM20100330A1 (it) Reattore a membrana per il trattamento di gas contenenti trizio
SMT201500156B (it) Composti di diidropirrolonaftiridinione come inibitori di jak
IT1402120B1 (it) Composizione di malta.
SMT201500035B (it) Sintesi di aliskiren
IT1403457B1 (it) Reattore meccano-chimico perfezionato
IT1391408B1 (it) Camera di separazione
IT1395353B1 (it) Camera di sicurezza
DK2516359T3 (da) Fremgangsmåde til fremstilling af ethylbenzen
DK2424538T3 (da) Anvendelse af allopurinol til behandling af hånd-fod-hudreaktion
IT1407283B1 (it) Nuovo composto di carnosina