IT1392068B1 - Camera di reazione di un reattore epitassiale - Google Patents
Camera di reazione di un reattore epitassialeInfo
- Publication number
- IT1392068B1 IT1392068B1 ITMI2008A002092A ITMI20082092A IT1392068B1 IT 1392068 B1 IT1392068 B1 IT 1392068B1 IT MI2008A002092 A ITMI2008A002092 A IT MI2008A002092A IT MI20082092 A ITMI20082092 A IT MI20082092A IT 1392068 B1 IT1392068 B1 IT 1392068B1
- Authority
- IT
- Italy
- Prior art keywords
- reaction chamber
- epitaxial reactor
- epitaxial
- reactor
- chamber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2008A002092A IT1392068B1 (it) | 2008-11-24 | 2008-11-24 | Camera di reazione di un reattore epitassiale |
EP09798951.1A EP2367964B1 (en) | 2008-11-24 | 2009-11-20 | Reaction chamber of an epitaxial reactor |
PCT/IB2009/007505 WO2010058269A1 (en) | 2008-11-24 | 2009-11-20 | Reaction chamber of an epitaxial reactor |
CN200980146751.1A CN102224277B (zh) | 2008-11-24 | 2009-11-20 | 外延反应器的反应室 |
JP2011536963A JP5600324B2 (ja) | 2008-11-24 | 2009-11-20 | エピタキシャル反応器の反応室 |
US13/131,011 US20110229378A1 (en) | 2008-11-24 | 2009-11-20 | Reaction Chamber of an Epitaxial Reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2008A002092A IT1392068B1 (it) | 2008-11-24 | 2008-11-24 | Camera di reazione di un reattore epitassiale |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI20082092A1 ITMI20082092A1 (it) | 2010-05-25 |
IT1392068B1 true IT1392068B1 (it) | 2012-02-09 |
Family
ID=41112787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI2008A002092A IT1392068B1 (it) | 2008-11-24 | 2008-11-24 | Camera di reazione di un reattore epitassiale |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110229378A1 (it) |
EP (1) | EP2367964B1 (it) |
JP (1) | JP5600324B2 (it) |
CN (1) | CN102224277B (it) |
IT (1) | IT1392068B1 (it) |
WO (1) | WO2010058269A1 (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108411362B (zh) * | 2017-02-09 | 2020-03-31 | 北京北方华创微电子装备有限公司 | 腔室及外延生长设备 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097622A (ja) * | 1983-11-01 | 1985-05-31 | Toshiba Mach Co Ltd | エピタキシヤル装置 |
US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
EP0147967B1 (en) * | 1983-12-09 | 1992-08-26 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
IT1209570B (it) * | 1984-07-19 | 1989-08-30 | Lpe Spa | Perfezionamento nei reattori epitassiali. |
US5259883A (en) * | 1988-02-16 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of thermally processing semiconductor wafers and an apparatus therefor |
JPH05509132A (ja) * | 1990-05-18 | 1993-12-16 | ヒトコ カーボン コンポジッツ インコーポレイテッド | 化学蒸着法のための素材 |
DE4338807C1 (de) | 1993-11-12 | 1995-01-26 | Heraeus Quarzglas | Formkörper mit hohem Gehalt an Siliziumdioxid und Verfahren zur Herstellung solcher Formkörper |
CN1188823A (zh) * | 1996-11-04 | 1998-07-29 | 通用电气公司 | 半导体圆片的热处理器 |
CN1067446C (zh) * | 1998-12-25 | 2001-06-20 | 清华大学 | 超高真空化学气相淀积外延系统 |
US6342691B1 (en) * | 1999-11-12 | 2002-01-29 | Mattson Technology, Inc. | Apparatus and method for thermal processing of semiconductor substrates |
US6666924B1 (en) * | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
JP4374156B2 (ja) * | 2000-09-01 | 2009-12-02 | 日本碍子株式会社 | Iii−v族窒化物膜の製造装置及び製造方法 |
JP3859072B2 (ja) * | 2001-03-08 | 2006-12-20 | 信越半導体株式会社 | 熱線反射材料及びそれを用いた加熱装置 |
KR20020080954A (ko) * | 2001-04-18 | 2002-10-26 | 주성엔지니어링(주) | 냉벽 화학기상증착 방법 및 장치 |
US7563512B2 (en) * | 2004-08-23 | 2009-07-21 | Heraeus Quarzglas Gmbh & Co. Kg | Component with a reflector layer and method for producing the same |
ITMI20041677A1 (it) * | 2004-08-30 | 2004-11-30 | E T C Epitaxial Technology Ct | Processo di pulitura e processo operativo per un reattore cvd. |
US20070295275A1 (en) * | 2004-10-01 | 2007-12-27 | Vincenzo Ogliari | Epitaxial Reactor Cooling Method and Reactor Cooled Thereby |
ITMI20051308A1 (it) * | 2005-07-11 | 2007-01-12 | Milano Politecnico | Metodo e reattore per crescere cristalli |
JP5117856B2 (ja) * | 2005-08-05 | 2013-01-16 | 株式会社日立国際電気 | 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法 |
JP4994724B2 (ja) * | 2006-07-07 | 2012-08-08 | 株式会社東芝 | 成膜装置及び成膜方法 |
DE102006046619A1 (de) * | 2006-09-29 | 2008-04-03 | Heraeus Quarzglas Gmbh & Co. Kg | Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers |
DE102006052512A1 (de) * | 2006-11-06 | 2008-05-08 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung von opakem Quarzglas, nach dem Verfahren erhaltenes Halbzeug sowie daraus hergestelltes Bauteil |
JP5043776B2 (ja) * | 2008-08-08 | 2012-10-10 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
-
2008
- 2008-11-24 IT ITMI2008A002092A patent/IT1392068B1/it active
-
2009
- 2009-11-20 CN CN200980146751.1A patent/CN102224277B/zh active Active
- 2009-11-20 US US13/131,011 patent/US20110229378A1/en not_active Abandoned
- 2009-11-20 WO PCT/IB2009/007505 patent/WO2010058269A1/en active Application Filing
- 2009-11-20 JP JP2011536963A patent/JP5600324B2/ja active Active
- 2009-11-20 EP EP09798951.1A patent/EP2367964B1/en not_active Revoked
Also Published As
Publication number | Publication date |
---|---|
US20110229378A1 (en) | 2011-09-22 |
CN102224277B (zh) | 2014-03-12 |
CN102224277A (zh) | 2011-10-19 |
JP2012510151A (ja) | 2012-04-26 |
JP5600324B2 (ja) | 2014-10-01 |
EP2367964A1 (en) | 2011-09-28 |
ITMI20082092A1 (it) | 2010-05-25 |
WO2010058269A1 (en) | 2010-05-27 |
EP2367964B1 (en) | 2014-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1393695B1 (it) | Camera di reazione di un reattore epitassiale e reattore che la utilizza | |
SMT201600267B (it) | Inibitori di syk imidazopirazinici | |
SMT201600293B (it) | Composti chimici | |
EP2353176A4 (en) | REACTION CHAMBER | |
SMT201600008B (it) | Composti di piridazinone | |
DOP2012000045A (es) | Compuestos químicos | |
DK2593449T3 (da) | Fremgangsmåde til syntese af benzothiadiazolforbindelse | |
DK2662352T3 (da) | Fremgangsmåde til fremstilling af phenylacetamidforbindelse | |
SMT201400023B (it) | Analoghi di buprenorfina | |
DK3329775T3 (da) | Fremgangsmåder til syntese af diarylthiohydantoin- og diarylhydantoinforbindelser | |
BRPI1008051A2 (pt) | câmara de confirmação de retorno arterial | |
ZA201104749B (en) | Benzonaphtyridine compounds used as inhibitors of autotaxin | |
BRPI0920608A2 (pt) | compostos quimicos | |
CR20120297A (es) | Espironucleósidos uracílicos oxetánicos | |
BRPI0914775A2 (pt) | compostos de fenila dissubstituídos | |
ITRM20100330A1 (it) | Reattore a membrana per il trattamento di gas contenenti trizio | |
SMT201500156B (it) | Composti di diidropirrolonaftiridinione come inibitori di jak | |
IT1402120B1 (it) | Composizione di malta. | |
SMT201500035B (it) | Sintesi di aliskiren | |
IT1403457B1 (it) | Reattore meccano-chimico perfezionato | |
IT1391408B1 (it) | Camera di separazione | |
IT1395353B1 (it) | Camera di sicurezza | |
DK2516359T3 (da) | Fremgangsmåde til fremstilling af ethylbenzen | |
DK2424538T3 (da) | Anvendelse af allopurinol til behandling af hånd-fod-hudreaktion | |
IT1407283B1 (it) | Nuovo composto di carnosina |