IT1393695B1 - Camera di reazione di un reattore epitassiale e reattore che la utilizza - Google Patents
Camera di reazione di un reattore epitassiale e reattore che la utilizzaInfo
- Publication number
- IT1393695B1 IT1393695B1 ITMI2009A000629A ITMI20090629A IT1393695B1 IT 1393695 B1 IT1393695 B1 IT 1393695B1 IT MI2009A000629 A ITMI2009A000629 A IT MI2009A000629A IT MI20090629 A ITMI20090629 A IT MI20090629A IT 1393695 B1 IT1393695 B1 IT 1393695B1
- Authority
- IT
- Italy
- Prior art keywords
- reactor
- reaction chamber
- epitaxial
- epitaxial reactor
- chamber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2009A000629A IT1393695B1 (it) | 2009-04-17 | 2009-04-17 | Camera di reazione di un reattore epitassiale e reattore che la utilizza |
PCT/IB2010/051666 WO2010119430A1 (en) | 2009-04-17 | 2010-04-16 | Reaction chamber of an epitaxial reactor and reactor that uses said chamber |
JP2012505290A JP6116900B2 (ja) | 2009-04-17 | 2010-04-16 | エピタキシャル反応器の反応室及び前記反応室を用いた反応器 |
EP10727855.8A EP2419552B1 (en) | 2009-04-17 | 2010-04-16 | Reaction chamber of an epitaxial reactor and reactor using the chamber |
US13/259,818 US9382642B2 (en) | 2009-04-17 | 2010-04-16 | Reaction chamber of an epitaxial reactor and reactor that uses said chamber |
CN201080016602.6A CN102395714B (zh) | 2009-04-17 | 2010-04-16 | 外延反应器的反应室和使用所述室的反应器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2009A000629A IT1393695B1 (it) | 2009-04-17 | 2009-04-17 | Camera di reazione di un reattore epitassiale e reattore che la utilizza |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI20090629A1 ITMI20090629A1 (it) | 2010-10-18 |
IT1393695B1 true IT1393695B1 (it) | 2012-05-08 |
Family
ID=41226172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI2009A000629A IT1393695B1 (it) | 2009-04-17 | 2009-04-17 | Camera di reazione di un reattore epitassiale e reattore che la utilizza |
Country Status (6)
Country | Link |
---|---|
US (1) | US9382642B2 (it) |
EP (1) | EP2419552B1 (it) |
JP (1) | JP6116900B2 (it) |
CN (1) | CN102395714B (it) |
IT (1) | IT1393695B1 (it) |
WO (1) | WO2010119430A1 (it) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103266307A (zh) * | 2013-05-22 | 2013-08-28 | 光垒光电科技(上海)有限公司 | 反应腔 |
KR102372893B1 (ko) * | 2014-12-04 | 2022-03-10 | 삼성전자주식회사 | 발광 소자 제조용 화학 기상 증착 장치 |
CN105350073B (zh) * | 2015-10-30 | 2018-09-25 | 中国电子科技集团公司第四十八研究所 | 一种硅外延设备的石墨盘旋转密封装置及自动上下料系统 |
CN107723790B (zh) * | 2016-08-12 | 2020-07-07 | 上海新昇半导体科技有限公司 | 一种外延设备、设备制作方法及外延方法 |
CN106282967B (zh) * | 2016-08-23 | 2019-03-26 | 深圳市国创新能源研究院 | 一种制备SiO/C复合材料的设备 |
RU2638575C1 (ru) * | 2016-11-08 | 2017-12-14 | Общество с ограниченной ответственностью "МеГа Эпитех" | Способ получения полупроводниковых структур методом жидкофазной эпитаксии с высокой однородностью по толщине эпитаксиальных слоев |
EP3635032B1 (en) | 2017-06-09 | 2021-08-04 | PRC-Desoto International, Inc. | Dual cure sealants |
US10597565B2 (en) | 2017-07-07 | 2020-03-24 | Prc-Desoto International, Inc. | Hydraulic fluid and fuel resistant sealants |
US10351674B2 (en) | 2017-10-17 | 2019-07-16 | Prc-Desoto International, Inc. | Sulfur-containing polymeric particles and compositions |
US11098222B2 (en) | 2018-07-03 | 2021-08-24 | Prc-Desoto International, Inc. | Sprayable polythioether coatings and sealants |
US10843180B2 (en) | 2018-10-02 | 2020-11-24 | Prc-Desoto International, Inc. | Delayed cure micro-encapsulated catalysts |
JP7350080B2 (ja) | 2019-02-11 | 2023-09-25 | ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド | 多層系および多層系を製造する方法 |
KR20240038831A (ko) | 2019-02-11 | 2024-03-25 | 피피지 인더스트리즈 오하이오 인코포레이티드 | 밀봉 캡의 3차원 인쇄 |
CN113677502B (zh) | 2019-02-11 | 2024-04-12 | Ppg工业俄亥俄公司 | 制作耐化学性密封组件的方法 |
US11015097B2 (en) | 2019-03-06 | 2021-05-25 | Prc-Desoto International, Inc. | Chemically resistant sealant compositions and uses thereof |
US11015057B2 (en) | 2019-04-03 | 2021-05-25 | Prc-Desoto International, Inc. | Dual-cure compositions |
US11173692B2 (en) | 2019-12-19 | 2021-11-16 | Prc-Desoto International, Inc. | Free radical polymerizable adhesion-promoting interlayer compositions and methods of use |
US11466125B2 (en) | 2019-12-19 | 2022-10-11 | Prc-Desoto International, Inc. | Low nucleation temperature polythioether prepolymers and uses thereof |
US11608458B2 (en) | 2019-12-19 | 2023-03-21 | Prc-Desoto International, Inc. | Adhesion-promoting interlayer compositions containing organic titanates/zirconates and methods of use |
US11600470B2 (en) * | 2019-12-27 | 2023-03-07 | Applied Materials, Inc. | Targeted heat control systems |
US11624007B2 (en) | 2020-01-29 | 2023-04-11 | Prc-Desoto International, Inc. | Photocurable adhesion-promoting compositions and methods of use |
US11214666B2 (en) | 2020-04-15 | 2022-01-04 | Prc-Desoto International, Inc. | Controlling cure rate with wetted filler |
AU2022222668A1 (en) | 2021-02-16 | 2023-08-17 | Prc-Desoto International, Inc. | Compositions containing a free radical polymerization initiator |
US20230158508A1 (en) * | 2021-03-12 | 2023-05-25 | Boe Technology Group Co., Ltd. | Microfluidic substrate, microfluidic chip and manufacturing method thereof |
KR20230159592A (ko) | 2021-03-29 | 2023-11-21 | 피알시-데소토 인터내쇼날, 인코포레이티드 | 하이브리드 이중 경화 조성물 |
EP4330311A1 (en) | 2021-04-27 | 2024-03-06 | PPG Industries Ohio Inc. | Multiple cure coreactive compositions for additive manufacturing and uses thereof |
IT202100014984A1 (it) * | 2021-06-09 | 2022-12-09 | Lpe Spa | Camera di reazione con sistema di rivestimento e reattore epitassiale |
WO2023034890A1 (en) | 2021-09-02 | 2023-03-09 | Prc-Desoto International, Inc. | Applicators for high viscosity materials |
CN118302486A (zh) | 2021-11-10 | 2024-07-05 | Ppg工业俄亥俄公司 | 线性密封部件及其增材制造方法和组合物 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0147967B1 (en) * | 1983-12-09 | 1992-08-26 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
DE3721636A1 (de) * | 1987-06-30 | 1989-01-12 | Aixtron Gmbh | Quarzglasreaktor fuer mocvd-anlagen |
JP2734197B2 (ja) | 1990-11-21 | 1998-03-30 | 富士電機株式会社 | 気相成長装置 |
US5256060A (en) * | 1992-01-28 | 1993-10-26 | Digital Equipment Corporation | Reducing gas recirculation in thermal processing furnace |
US5221356A (en) * | 1992-10-08 | 1993-06-22 | Northern Telecom Limited | Apparatus for manufacturing semiconductor wafers |
US5441570A (en) * | 1993-06-22 | 1995-08-15 | Jein Technics Co., Ltd. | Apparatus for low pressure chemical vapor deposition |
IT1271233B (it) | 1994-09-30 | 1997-05-27 | Lpe | Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
US6259062B1 (en) * | 1999-12-03 | 2001-07-10 | Asm America, Inc. | Process chamber cooling |
US6331212B1 (en) | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
JP2002110558A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
DE10209763A1 (de) * | 2002-03-05 | 2003-10-02 | Bosch Gmbh Robert | Vorrichtung und Verfahren zum anisotropen Plasmaätzen eines Substrates, insbesondere eines Siliziumkörpers |
JP2006284077A (ja) * | 2005-03-31 | 2006-10-19 | Kumamoto Technology & Industry Foundation | 熱輻射反射炉 |
JP2007149774A (ja) * | 2005-11-24 | 2007-06-14 | Sharp Corp | 気相成長装置 |
US8497587B2 (en) * | 2009-12-30 | 2013-07-30 | Stmicroelectronics Pte Ltd. | Thermally enhanced expanded wafer level package ball grid array structure and method of making the same |
-
2009
- 2009-04-17 IT ITMI2009A000629A patent/IT1393695B1/it active
-
2010
- 2010-04-16 WO PCT/IB2010/051666 patent/WO2010119430A1/en active Application Filing
- 2010-04-16 EP EP10727855.8A patent/EP2419552B1/en active Active
- 2010-04-16 CN CN201080016602.6A patent/CN102395714B/zh not_active Ceased
- 2010-04-16 US US13/259,818 patent/US9382642B2/en active Active
- 2010-04-16 JP JP2012505290A patent/JP6116900B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012524013A (ja) | 2012-10-11 |
EP2419552B1 (en) | 2016-07-06 |
US9382642B2 (en) | 2016-07-05 |
ITMI20090629A1 (it) | 2010-10-18 |
US20120027646A1 (en) | 2012-02-02 |
EP2419552A1 (en) | 2012-02-22 |
WO2010119430A1 (en) | 2010-10-21 |
CN102395714B (zh) | 2014-07-09 |
CN102395714A (zh) | 2012-03-28 |
JP6116900B2 (ja) | 2017-04-19 |
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