IT1215444B - Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali. - Google Patents

Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.

Info

Publication number
IT1215444B
IT1215444B IT8720255A IT2025587A IT1215444B IT 1215444 B IT1215444 B IT 1215444B IT 8720255 A IT8720255 A IT 8720255A IT 2025587 A IT2025587 A IT 2025587A IT 1215444 B IT1215444 B IT 1215444B
Authority
IT
Italy
Prior art keywords
suscepters
refinements
inductors
epitaxial reactors
epitaxial
Prior art date
Application number
IT8720255A
Other languages
English (en)
Other versions
IT8720255A0 (it
Inventor
Pozzetti Vittorio
Preti Franco
Poggi Piergiovanni
Original Assignee
L P E S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L P E S P A filed Critical L P E S P A
Priority to IT8720255A priority Critical patent/IT1215444B/it
Publication of IT8720255A0 publication Critical patent/IT8720255A0/it
Priority to US07/073,483 priority patent/US4858557A/en
Priority to DE88200614T priority patent/DE3887002T2/de
Priority to EP88200614A priority patent/EP0293021B1/en
Priority to JP63099354A priority patent/JP2588578B2/ja
Application granted granted Critical
Publication of IT1215444B publication Critical patent/IT1215444B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
IT8720255A 1984-07-19 1987-04-24 Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali. IT1215444B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8720255A IT1215444B (it) 1987-04-24 1987-04-24 Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
US07/073,483 US4858557A (en) 1984-07-19 1987-07-15 Epitaxial reactors
DE88200614T DE3887002T2 (de) 1987-04-24 1988-03-31 Induktionsheizungsvorrichtung für einen Epitaxiereaktor.
EP88200614A EP0293021B1 (en) 1987-04-24 1988-03-31 Induction heating system for an epitaxial reactor
JP63099354A JP2588578B2 (ja) 1987-04-24 1988-04-23 エピタキシヤル反応炉

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8720255A IT1215444B (it) 1987-04-24 1987-04-24 Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.

Publications (2)

Publication Number Publication Date
IT8720255A0 IT8720255A0 (it) 1987-04-24
IT1215444B true IT1215444B (it) 1990-02-14

Family

ID=11165187

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8720255A IT1215444B (it) 1984-07-19 1987-04-24 Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.

Country Status (4)

Country Link
EP (1) EP0293021B1 (it)
JP (1) JP2588578B2 (it)
DE (1) DE3887002T2 (it)
IT (1) IT1215444B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153368B2 (en) 2001-09-07 2006-12-26 Lpe Spa Susceptor with epitaxial growth control devices and epitaxial reactor using the same

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5855677A (en) * 1994-09-30 1999-01-05 Applied Materials, Inc. Method and apparatus for controlling the temperature of reaction chamber walls
EP1143036A3 (en) * 1996-05-21 2001-11-28 Applied Materials, Inc. Apparatus and method for controlling the temperature of a wall of a reaction chamber
US6031211A (en) * 1997-07-11 2000-02-29 Concept Systems Design, Inc. Zone heating system with feedback control
EP0823492A3 (en) * 1996-08-07 1999-01-20 Concept Systems Design Inc. Zone heating system with feedback control
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
JP5632190B2 (ja) * 2009-07-02 2014-11-26 株式会社日立国際電気 半導体装置の製造方法、基板の製造方法及び基板処理装置
JP4918168B1 (ja) * 2011-03-31 2012-04-18 三井造船株式会社 誘導加熱装置
JP4980475B1 (ja) * 2011-03-31 2012-07-18 三井造船株式会社 誘導加熱装置
JP5005120B1 (ja) * 2012-01-26 2012-08-22 三井造船株式会社 誘導加熱方法
JP6058491B2 (ja) * 2012-07-13 2017-01-11 晶元光電股▲ふん▼有限公司 気相成長用反応装置
JP6094605B2 (ja) 2015-01-20 2017-03-15 トヨタ自動車株式会社 単結晶製造装置
DE102021113354A1 (de) * 2021-05-21 2022-11-24 TRUMPF Hüttinger GmbH + Co. KG Induktoranordnung, eine Induktionserwärmungsanordnung und ein Verfahren zur Induktionserwärmung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3645230A (en) * 1970-03-05 1972-02-29 Hugle Ind Inc Chemical deposition apparatus
US3964430A (en) * 1974-11-14 1976-06-22 Unicorp Incorporated Semi-conductor manufacturing reactor instrument with improved reactor tube cooling
DE3485898D1 (de) * 1983-12-09 1992-10-01 Applied Materials Inc Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
IT1209570B (it) * 1984-07-19 1989-08-30 Lpe Spa Perfezionamento nei reattori epitassiali.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153368B2 (en) 2001-09-07 2006-12-26 Lpe Spa Susceptor with epitaxial growth control devices and epitaxial reactor using the same

Also Published As

Publication number Publication date
IT8720255A0 (it) 1987-04-24
JP2588578B2 (ja) 1997-03-05
DE3887002T2 (de) 1994-04-28
DE3887002D1 (de) 1994-02-24
EP0293021B1 (en) 1994-01-12
EP0293021A3 (en) 1990-05-16
JPS63284810A (ja) 1988-11-22
EP0293021A2 (en) 1988-11-30

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Effective date: 19970506