IT1312150B1 - Perfezionata camera di reazione per reattore epitassiale - Google Patents

Perfezionata camera di reazione per reattore epitassiale

Info

Publication number
IT1312150B1
IT1312150B1 IT1999MI000607A ITMI990607A IT1312150B1 IT 1312150 B1 IT1312150 B1 IT 1312150B1 IT 1999MI000607 A IT1999MI000607 A IT 1999MI000607A IT MI990607 A ITMI990607 A IT MI990607A IT 1312150 B1 IT1312150 B1 IT 1312150B1
Authority
IT
Italy
Prior art keywords
epitaxial reactor
reaction chamber
improved reaction
belljar
insulating
Prior art date
Application number
IT1999MI000607A
Other languages
English (en)
Inventor
Franco Preti
Vincenzo Ogliari
Giuseppe Tarenzi
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to IT1999MI000607A priority Critical patent/IT1312150B1/it
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to US09/807,589 priority patent/US7314526B1/en
Priority to KR1020017010716A priority patent/KR100724876B1/ko
Priority to AT00920507T priority patent/ATE252655T1/de
Priority to ES00920507T priority patent/ES2207499T3/es
Priority to DK00920507T priority patent/DK1173632T3/da
Priority to PCT/EP2000/002364 priority patent/WO2000058533A1/en
Priority to EP00920507A priority patent/EP1173632B1/en
Priority to PT00920507T priority patent/PT1173632E/pt
Priority to CNB008021198A priority patent/CN1255582C/zh
Priority to JP2000608810A priority patent/JP2002540642A/ja
Priority to DE60006095T priority patent/DE60006095T2/de
Publication of ITMI990607A1 publication Critical patent/ITMI990607A1/it
Application granted granted Critical
Publication of IT1312150B1 publication Critical patent/IT1312150B1/it
Priority to HK02102746.1A priority patent/HK1041029A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
IT1999MI000607A 1999-03-25 1999-03-25 Perfezionata camera di reazione per reattore epitassiale IT1312150B1 (it)

Priority Applications (13)

Application Number Priority Date Filing Date Title
IT1999MI000607A IT1312150B1 (it) 1999-03-25 1999-03-25 Perfezionata camera di reazione per reattore epitassiale
PT00920507T PT1173632E (pt) 1999-03-25 2000-03-17 Camara de reaccao para um reactor epitaxial
AT00920507T ATE252655T1 (de) 1999-03-25 2000-03-17 Reaktorkammer für einen epitaxiereaktor
ES00920507T ES2207499T3 (es) 1999-03-25 2000-03-17 Camara de reaccion para un reactor epitaxial.
DK00920507T DK1173632T3 (da) 1999-03-25 2000-03-17 Reaktionskammer til en epitaksialreaktor
PCT/EP2000/002364 WO2000058533A1 (en) 1999-03-25 2000-03-17 Reaction chamber for an epitaxial reactor
US09/807,589 US7314526B1 (en) 1999-03-25 2000-03-17 Reaction chamber for an epitaxial reactor
KR1020017010716A KR100724876B1 (ko) 1999-03-25 2000-03-17 에피텍셜 반응기를 위한 반응챔버
CNB008021198A CN1255582C (zh) 1999-03-25 2000-03-17 用于一个外延反应器的反应腔
JP2000608810A JP2002540642A (ja) 1999-03-25 2000-03-17 エピタキシャル反応装置用反応チャンバ
DE60006095T DE60006095T2 (de) 1999-03-25 2000-03-17 Reaktorkammer für einen epitaxiereaktor
EP00920507A EP1173632B1 (en) 1999-03-25 2000-03-17 Reaction chamber for an epitaxial reactor
HK02102746.1A HK1041029A1 (zh) 1999-03-25 2002-04-11 用於一個外延反應器的反應腔

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI000607A IT1312150B1 (it) 1999-03-25 1999-03-25 Perfezionata camera di reazione per reattore epitassiale

Publications (2)

Publication Number Publication Date
ITMI990607A1 ITMI990607A1 (it) 2000-09-25
IT1312150B1 true IT1312150B1 (it) 2002-04-09

Family

ID=11382429

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI000607A IT1312150B1 (it) 1999-03-25 1999-03-25 Perfezionata camera di reazione per reattore epitassiale

Country Status (13)

Country Link
US (1) US7314526B1 (it)
EP (1) EP1173632B1 (it)
JP (1) JP2002540642A (it)
KR (1) KR100724876B1 (it)
CN (1) CN1255582C (it)
AT (1) ATE252655T1 (it)
DE (1) DE60006095T2 (it)
DK (1) DK1173632T3 (it)
ES (1) ES2207499T3 (it)
HK (1) HK1041029A1 (it)
IT (1) IT1312150B1 (it)
PT (1) PT1173632E (it)
WO (1) WO2000058533A1 (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20011881A1 (it) * 2001-09-07 2003-03-07 L P E S P A Suscettori dotato di dispositivi di controllo della crescita epitassiale e reattore epitassiale che utilizza lo stesso
ITMI20031841A1 (it) * 2003-09-25 2005-03-26 Lpe Spa Suscettore per reattori epitassiali ad induzione.
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
DE102007063363B4 (de) * 2007-05-21 2016-05-12 Centrotherm Photovoltaics Ag Vorrichtung zur Dotierung und Beschichtung von Halbleitermaterial bei niedrigem Druck
US8404049B2 (en) 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
US7833885B2 (en) 2008-02-11 2010-11-16 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US8076222B2 (en) * 2008-02-11 2011-12-13 Applied Materials, Inc. Microcrystalline silicon thin film transistor
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
JP4676567B1 (ja) * 2010-07-20 2011-04-27 三井造船株式会社 半導体基板熱処理装置
CN103608925B (zh) 2011-07-13 2017-06-13 应用材料公司 制造薄膜晶体管器件的方法
CN103828061B (zh) 2011-10-07 2018-02-13 应用材料公司 使用氩气稀释来沉积含硅层的方法
TWI470105B (zh) * 2013-06-03 2015-01-21 Adpv Technology Ltd Gas Reaction Continuous Cavity and Gas Reaction
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
CN108886014B (zh) 2016-03-28 2023-08-08 应用材料公司 基座支撑件
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
US20180340052A1 (en) * 2017-05-24 2018-11-29 Garlock Sealing Technologies, Llc Biaxial ptfe gasket material with high purity filler
US11670490B2 (en) 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
CN117187785B (zh) * 2023-11-08 2024-02-23 新美光(苏州)半导体科技有限公司 一种化学气相沉积装置及方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525870A (en) * 1967-11-09 1970-08-25 Ibm Magnetic memory having polarized state detector
US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4632060A (en) * 1984-03-12 1986-12-30 Toshiba Machine Co. Ltd Barrel type of epitaxial vapor phase growing apparatus
IT1215444B (it) * 1987-04-24 1990-02-14 L P E S P A Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
US4694779A (en) * 1984-10-19 1987-09-22 Tetron, Inc. Reactor apparatus for semiconductor wafer processing
US4638762A (en) * 1985-08-30 1987-01-27 At&T Technologies, Inc. Chemical vapor deposition method and apparatus
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US4807562A (en) * 1987-01-05 1989-02-28 Norman Sandys Reactor for heating semiconductor substrates
US4911102A (en) * 1987-01-31 1990-03-27 Toyoda Gosei Co., Ltd. Process of vapor growth of gallium nitride and its apparatus
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
JP2882605B2 (ja) * 1987-08-27 1999-04-12 テキサス インスツルメンツ インコーポレイテッド 歪み層超格子構造の連続成長方法
JPH01125923A (ja) * 1987-11-11 1989-05-18 Sumitomo Chem Co Ltd 気相成長装置
FR2628984B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
US4928626A (en) * 1989-05-19 1990-05-29 Applied Materials, Inc. Reactant gas injection for IC processing
IT1231547B (it) * 1989-08-31 1991-12-17 Lpe Spa Sistema per controllare velocita' di crescita epitassiale in reattori verticali muniti di suscettore troncopiramidale
DE69126122T2 (de) * 1990-09-21 1997-08-28 Fujitsu Ltd Methode und apparat zum wachsen von verbindungshalbleiterkristallen
US5284805A (en) * 1991-07-11 1994-02-08 Sematech, Inc. Rapid-switching rotating disk reactor
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
CN1171137A (zh) * 1994-11-16 1998-01-21 B·F·谷德里奇公司 压力梯度化学蒸汽渗透和沉积的设备及工艺和制品
JP3424867B2 (ja) * 1994-12-06 2003-07-07 富士通株式会社 プラズマ処理装置及びプラズマ処理方法
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5908504A (en) * 1995-09-20 1999-06-01 Memc Electronic Materials, Inc. Method for tuning barrel reactor purge system
JP3360265B2 (ja) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5910221A (en) * 1997-06-18 1999-06-08 Applied Materials, Inc. Bonded silicon carbide parts in a plasma reactor
US6015595A (en) * 1998-05-28 2000-01-18 Felts; John T. Multiple source deposition plasma apparatus
US6562128B1 (en) * 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
US5964948A (en) * 1998-08-17 1999-10-12 Seh America, Inc. Exhaust insert for barrel-type epitaxial reactors
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange
US6475284B1 (en) * 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head

Also Published As

Publication number Publication date
DK1173632T3 (da) 2004-03-01
ES2207499T3 (es) 2004-06-01
DE60006095D1 (de) 2003-11-27
ITMI990607A1 (it) 2000-09-25
KR100724876B1 (ko) 2007-06-04
PT1173632E (pt) 2004-03-31
EP1173632B1 (en) 2003-10-22
KR20010102336A (ko) 2001-11-15
EP1173632A1 (en) 2002-01-23
WO2000058533A1 (en) 2000-10-05
DE60006095T2 (de) 2004-08-19
CN1327490A (zh) 2001-12-19
ATE252655T1 (de) 2003-11-15
HK1041029A1 (zh) 2002-06-28
US7314526B1 (en) 2008-01-01
JP2002540642A (ja) 2002-11-26
CN1255582C (zh) 2006-05-10

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