DE69126122T2 - Methode und apparat zum wachsen von verbindungshalbleiterkristallen - Google Patents

Methode und apparat zum wachsen von verbindungshalbleiterkristallen

Info

Publication number
DE69126122T2
DE69126122T2 DE69126122T DE69126122T DE69126122T2 DE 69126122 T2 DE69126122 T2 DE 69126122T2 DE 69126122 T DE69126122 T DE 69126122T DE 69126122 T DE69126122 T DE 69126122T DE 69126122 T2 DE69126122 T2 DE 69126122T2
Authority
DE
Germany
Prior art keywords
growing
semiconductor crystals
connecting semiconductor
crystals
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69126122T
Other languages
English (en)
Other versions
DE69126122D1 (de
Inventor
Makoto Kondo
Hiroshi Sekiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69126122D1 publication Critical patent/DE69126122D1/de
Application granted granted Critical
Publication of DE69126122T2 publication Critical patent/DE69126122T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
DE69126122T 1990-09-21 1991-09-20 Methode und apparat zum wachsen von verbindungshalbleiterkristallen Expired - Fee Related DE69126122T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25233590 1990-09-21
PCT/JP1991/001262 WO1992005577A1 (fr) 1990-09-21 1991-09-20 Procede et appareil pour former par croissance des cristaux de composes semi-conducteurs

Publications (2)

Publication Number Publication Date
DE69126122D1 DE69126122D1 (de) 1997-06-19
DE69126122T2 true DE69126122T2 (de) 1997-08-28

Family

ID=17235839

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126122T Expired - Fee Related DE69126122T2 (de) 1990-09-21 1991-09-20 Methode und apparat zum wachsen von verbindungshalbleiterkristallen

Country Status (4)

Country Link
US (2) US5304247A (de)
EP (1) EP0502209B1 (de)
DE (1) DE69126122T2 (de)
WO (1) WO1992005577A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10337568A1 (de) * 2003-08-14 2005-03-17 Infineon Technologies Ag Gasversorgungsanordnung, insbesondere für einen CVD-Prozessreaktor zum Aufwachsen einer Epitaxieschicht

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JP2785614B2 (ja) * 1992-09-28 1998-08-13 信越半導体株式会社 シリンダー型エピタキシャル層成長装置
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
JP3042335B2 (ja) * 1994-10-25 2000-05-15 信越半導体株式会社 気相成長方法及びその装置
US5516722A (en) * 1994-10-31 1996-05-14 Texas Instruments Inc. Method for increasing doping uniformity in a flow flange reactor
FR2727693A1 (fr) * 1994-12-06 1996-06-07 Centre Nat Rech Scient Reacteur pour le depot de couches minces en phase vapeur (cvd)
US5554220A (en) * 1995-05-19 1996-09-10 The Trustees Of Princeton University Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
EP0854210B1 (de) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Aufdampfungsvorrichtung zur Herstellung von Dünnfilmen
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
WO2002008487A1 (en) * 2000-07-24 2002-01-31 The University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US7163587B2 (en) * 2002-02-08 2007-01-16 Axcelis Technologies, Inc. Reactor assembly and processing method
JP3882141B2 (ja) * 2002-06-13 2007-02-14 日鉱金属株式会社 気相成長装置および気相成長方法
JP4216541B2 (ja) * 2002-06-13 2009-01-28 日鉱金属株式会社 気相成長装置
US20050178336A1 (en) 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
KR100541050B1 (ko) * 2003-07-22 2006-01-11 삼성전자주식회사 가스공급장치 및 이를 이용한 반도체소자 제조설비
US20050016952A1 (en) * 2003-07-25 2005-01-27 International Business Machines Corporation System and method of altering a very small surface area by multiple channel probe
WO2005124859A2 (en) * 2004-06-10 2005-12-29 Avansys, Inc. Methods and apparatuses for depositing uniform layers
KR101309334B1 (ko) * 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
JP2006253696A (ja) * 2005-03-10 2006-09-21 Asm America Inc ガスインジェクタ制御システム
JP2007251078A (ja) * 2006-03-20 2007-09-27 Nuflare Technology Inc 気相成長装置
US20090096349A1 (en) 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8216419B2 (en) 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US8067061B2 (en) * 2007-10-25 2011-11-29 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
US8668775B2 (en) 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
US20090236447A1 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus for controlling gas injection in process chamber
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
JP5497423B2 (ja) * 2009-12-25 2014-05-21 東京エレクトロン株式会社 成膜装置
JP5815967B2 (ja) * 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
US10066297B2 (en) * 2011-08-31 2018-09-04 Alta Devices, Inc. Tiled showerhead for a semiconductor chemical vapor deposition reactor
US9175393B1 (en) * 2011-08-31 2015-11-03 Alta Devices, Inc. Tiled showerhead for a semiconductor chemical vapor deposition reactor
JP6573559B2 (ja) * 2016-03-03 2019-09-11 東京エレクトロン株式会社 気化原料供給装置及びこれを用いた基板処理装置

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US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
JPS58176196A (ja) * 1982-04-06 1983-10-15 Matsushita Electric Ind Co Ltd 化合物結晶成長装置
JPS595547B2 (ja) * 1982-04-07 1984-02-06 科学技術庁無機材質研究所長 立方晶系窒化ほう素の焼結体の製造法
JPS6081093A (ja) * 1983-10-06 1985-05-09 Ulvac Corp 気相エピタキシヤル成長用化学反応装置
US4829021A (en) * 1986-12-12 1989-05-09 Daido Sanso K.K. Process for vacuum chemical epitaxy
US5138973A (en) * 1987-07-16 1992-08-18 Texas Instruments Incorporated Wafer processing apparatus having independently controllable energy sources
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
JP2668687B2 (ja) * 1987-11-27 1997-10-27 富士通株式会社 Ｃ ｖ ｄ 装 置
US5002630A (en) * 1989-06-06 1991-03-26 Rapro Technology Method for high temperature thermal processing with reduced convective heat loss
JPH0681093A (ja) * 1992-08-31 1994-03-22 Kawasaki Steel Corp ストリップの溶融金属メッキ設備

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10337568A1 (de) * 2003-08-14 2005-03-17 Infineon Technologies Ag Gasversorgungsanordnung, insbesondere für einen CVD-Prozessreaktor zum Aufwachsen einer Epitaxieschicht

Also Published As

Publication number Publication date
EP0502209A1 (de) 1992-09-09
DE69126122D1 (de) 1997-06-19
WO1992005577A1 (fr) 1992-04-02
US5392730A (en) 1995-02-28
EP0502209B1 (de) 1997-05-14
EP0502209A4 (en) 1993-06-16
US5304247A (en) 1994-04-19

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Legal Events

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8339 Ceased/non-payment of the annual fee