DE69124287D1 - Verfahren und Apparat zum Reinigen von Silizium - Google Patents

Verfahren und Apparat zum Reinigen von Silizium

Info

Publication number
DE69124287D1
DE69124287D1 DE69124287T DE69124287T DE69124287D1 DE 69124287 D1 DE69124287 D1 DE 69124287D1 DE 69124287 T DE69124287 T DE 69124287T DE 69124287 T DE69124287 T DE 69124287T DE 69124287 D1 DE69124287 D1 DE 69124287D1
Authority
DE
Germany
Prior art keywords
cleaning silicon
silicon
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69124287T
Other languages
English (en)
Other versions
DE69124287T2 (de
Inventor
Noriyoshi Yuge
Hiroyuki Baba
Fukuo Aratani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Application granted granted Critical
Publication of DE69124287D1 publication Critical patent/DE69124287D1/de
Publication of DE69124287T2 publication Critical patent/DE69124287T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69124287T 1990-05-30 1991-05-28 Verfahren und Apparat zum Reinigen von Silizium Expired - Lifetime DE69124287T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13826690 1990-05-30
JP13826890 1990-05-30
JP10434291A JP3205352B2 (ja) 1990-05-30 1991-05-09 シリコン精製方法及び装置

Publications (2)

Publication Number Publication Date
DE69124287D1 true DE69124287D1 (de) 1997-03-06
DE69124287T2 DE69124287T2 (de) 1997-05-07

Family

ID=27310203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124287T Expired - Lifetime DE69124287T2 (de) 1990-05-30 1991-05-28 Verfahren und Apparat zum Reinigen von Silizium

Country Status (6)

Country Link
US (1) US5182091A (de)
EP (1) EP0459421B1 (de)
JP (1) JP3205352B2 (de)
CA (1) CA2043492C (de)
DE (1) DE69124287T2 (de)
NO (1) NO310347B1 (de)

Families Citing this family (50)

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US5346724A (en) * 1991-04-12 1994-09-13 Nippon Oil Company, Ltd. Oil and fat composition for lubricating food processing machines and use thereof
NO180532C (no) * 1994-09-01 1997-05-07 Elkem Materials Fremgangsmåte for fjerning av forurensninger fra smeltet silisium
US5753567A (en) * 1995-08-28 1998-05-19 Memc Electronic Materials, Inc. Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma
FR2746785B1 (fr) * 1996-04-02 1998-05-22 Pechiney Electrometallurgie Silicium metallurgique a structure controlee destine a la synthese des halogenosilanes
JP3325900B2 (ja) * 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
NO980278L (no) * 1997-01-22 1998-07-23 Kawasaki Steel Co FremgangsmÕte og apparatur for fjerning av bor fra silisium av metallurgisk kvalitet
US6368403B1 (en) * 1997-08-28 2002-04-09 Crystal Systems, Inc. Method and apparatus for purifying silicon
US5972107A (en) * 1997-08-28 1999-10-26 Crystal Systems, Inc. Method for purifying silicon
FR2772741B1 (fr) * 1997-12-19 2000-03-10 Centre Nat Rech Scient Procede et installation d'affinage du silicium
WO2002016265A1 (en) 2000-08-21 2002-02-28 Astropower, Inc. Method and apparatus for purifying silicon
US6994835B2 (en) * 2000-12-28 2006-02-07 Sumitomo Mitsubishi Silicon Corporation Silicon continuous casting method
FR2827592B1 (fr) 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
CN100457615C (zh) * 2003-12-04 2009-02-04 陶氏康宁公司 从冶金级硅中去除杂质以制得太阳能级硅的方法
JP4766837B2 (ja) 2004-03-03 2011-09-07 新日鉄マテリアルズ株式会社 シリコンからのホウ素除去方法
FR2871151B1 (fr) * 2004-06-07 2006-08-11 Centre Nat Rech Scient Cnrse Installation d'affinage de silicium
JP4665479B2 (ja) * 2004-09-27 2011-04-06 株式会社 アイアイエスマテリアル 電子ビームを用いたボロン含有シリコンの精錬方法及び装置
JP4632769B2 (ja) 2004-12-09 2011-02-16 シャープ株式会社 シリコンの精製方法
JP4966560B2 (ja) 2005-03-07 2012-07-04 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
JP5140835B2 (ja) * 2005-03-07 2013-02-13 新日鉄住金マテリアルズ株式会社 高純度シリコンの製造方法
JP4741860B2 (ja) * 2005-03-07 2011-08-10 新日鉄マテリアルズ株式会社 高純度のシリコンの製造方法
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
JP5084144B2 (ja) * 2006-01-18 2012-11-28 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
EP2024285B1 (de) * 2006-04-04 2014-06-11 Silicor Materials Inc. Verfahren zur reinigung von silicium
US7682585B2 (en) 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
FR2912397B1 (fr) * 2007-02-14 2009-05-08 Commissariat Energie Atomique Installation d'affinage de silicium.
JP2008241197A (ja) * 2007-03-28 2008-10-09 Fuji Electric Systems Co Ltd 通電加熱装置
CA2700997A1 (en) 2007-10-03 2009-04-09 6N Silicon Inc. Method for processing silicon powder to obtain silicon crystals
FR2928641B1 (fr) 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
ITMI20081085A1 (it) * 2008-06-16 2009-12-17 N E D Silicon S P A Metodo per la preparazione di silicio di grado metallurgico di elevata purezza.
DE112009001990B4 (de) * 2008-08-15 2018-01-25 Ulvac, Inc. Verfahren zum Reinigen von Silizium
JP5512941B2 (ja) * 2008-08-27 2014-06-04 株式会社アルバック シリコンの精製装置および精製方法
JP2011251853A (ja) * 2008-08-29 2011-12-15 Shin-Etsu Chemical Co Ltd 珪素の精製方法
IT1394029B1 (it) 2009-05-12 2012-05-25 Raysolar S R L Metodo per la purificazione di silicio ed apparato con cui realizzarlo
KR100966755B1 (ko) * 2009-05-25 2010-06-29 (주)원익머트리얼즈 금속실리콘의 정제방법 및 그 정제장치
KR20120031159A (ko) 2009-07-03 2012-03-30 미쓰비시 가가꾸 가부시키가이샤 실리콘의 제조 방법, 실리콘 및 태양 전지용 패널
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
FR2950046B1 (fr) * 2009-09-15 2011-11-25 Apollon Solar Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification
TWI393805B (zh) * 2009-11-16 2013-04-21 Masahiro Hoshino Purification method of metallurgical silicon
CN101708850B (zh) * 2009-11-19 2011-09-14 大连理工大学 连续熔炼去除多晶硅中磷和硼的方法及装置
TWI397617B (zh) * 2010-02-12 2013-06-01 Masahiro Hoshino Metal silicon purification device
TWI403461B (zh) * 2010-07-21 2013-08-01 Masahiro Hoshino Method and apparatus for improving yield and yield of metallurgical silicon
CN102742034B (zh) * 2010-08-16 2015-10-14 星野政宏 冶金硅的提纯方法
CN102834935B (zh) * 2010-08-16 2015-06-03 星野政宏 用于太阳能电池的冶金硅的提纯设备和方法
CN101948113B (zh) * 2010-09-19 2014-01-01 江西盛丰新能源科技有限公司 一种物理除磷制备多晶硅的方法及设备
US9802827B2 (en) 2015-10-09 2017-10-31 Milwaukee Silicon, Llc Purified silicon, devices and systems for producing same
CN105671474B (zh) * 2016-03-18 2018-11-30 李光武 制造半导体基片的方法和装置
RU2693172C1 (ru) * 2018-10-09 2019-07-01 Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" ФГБОУ ВО "РГРТУ" Способ очистки металлургического кремния от примесей
CN109161963A (zh) * 2018-10-29 2019-01-08 大连颐和顺新材料科技有限公司 一种高效回收金刚线切割硅粉制备太阳能级多晶硅的方法
RU2707053C1 (ru) * 2018-12-25 2019-11-21 Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" Способ очистки металлургического кремния от углерода
CN115872408B (zh) * 2022-10-19 2023-08-11 北京理工大学 一种基于热等离子体射流的石英砂纯化方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2623413C2 (de) * 1976-05-25 1985-01-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von für Halbleiterbauelemente verwendbarem Silicium
FR2438499A1 (fr) * 1978-10-13 1980-05-09 Anvar Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante
JPS6031761B2 (ja) * 1979-12-28 1985-07-24 富士写真フイルム株式会社 非晶質シリコン微粉末の製造方法
DE3016807A1 (de) * 1980-05-02 1981-11-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von silizium
CA1147698A (en) * 1980-10-15 1983-06-07 Maher I. Boulos Purification of metallurgical grade silicon
JPS57149815A (en) * 1981-03-05 1982-09-16 Shin Etsu Chem Co Ltd Manufacture of granular silicon
JPH075288B2 (ja) * 1985-07-31 1995-01-25 フォトワット・インタナショナル・ソシエテ・アノニム 分割されたけい素をプラズマの下で精製する方法
US4680096A (en) * 1985-12-26 1987-07-14 Dow Corning Corporation Plasma smelting process for silicon
JPS62292613A (ja) * 1986-06-10 1987-12-19 Kawasaki Steel Corp 高純度けい素の精製方法
DE3760173D1 (en) * 1987-01-08 1989-06-29 Rhone Poulenc Chimie Process for the plasma purification of divided silicon

Also Published As

Publication number Publication date
DE69124287T2 (de) 1997-05-07
JPH04228414A (ja) 1992-08-18
NO310347B1 (no) 2001-06-25
CA2043492C (en) 2000-05-23
EP0459421B1 (de) 1997-01-22
CA2043492A1 (en) 1991-12-01
US5182091A (en) 1993-01-26
NO912074D0 (no) 1991-05-29
NO912074L (no) 1991-12-02
EP0459421A1 (de) 1991-12-04
JP3205352B2 (ja) 2001-09-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

8327 Change in the person/name/address of the patent owner

Owner name: JFE STEEL CORP., TOKIO/TOKYO, JP