FR2438499A1 - Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante - Google Patents

Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante

Info

Publication number
FR2438499A1
FR2438499A1 FR7829265A FR7829265A FR2438499A1 FR 2438499 A1 FR2438499 A1 FR 2438499A1 FR 7829265 A FR7829265 A FR 7829265A FR 7829265 A FR7829265 A FR 7829265A FR 2438499 A1 FR2438499 A1 FR 2438499A1
Authority
FR
France
Prior art keywords
jet
prepn
heating
heat source
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7829265A
Other languages
English (en)
Other versions
FR2438499B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7829265A priority Critical patent/FR2438499A1/fr
Publication of FR2438499A1 publication Critical patent/FR2438499A1/fr
Application granted granted Critical
Publication of FR2438499B1 publication Critical patent/FR2438499B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

PROCEDE ET INSTALLATION D'ELABORATION DE CRISTAUX DE HAUTE PURETE PAR FUSION DE ZONE. SELON L'INVENTION, LE MOYEN DE CHAUFFAGE UTILISE POUR PROVOQUER LA FUSION DE ZONE EST UN JET DE PLASMA SOUS ATMOSPHERE CONTROLEE. CE PROCEDE PERMET D'AMELIORER LA PURETE DES CRISTAUX OBTENUS ET D'ACCELERER LE TRAITEMENT. APPLICATION A LA REALISATION DE SILICIUM TRES PUR DESTINE NOTAMMENT AUX CELLULES SOLAIRES.
FR7829265A 1978-10-13 1978-10-13 Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante Granted FR2438499A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7829265A FR2438499A1 (fr) 1978-10-13 1978-10-13 Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7829265A FR2438499A1 (fr) 1978-10-13 1978-10-13 Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante

Publications (2)

Publication Number Publication Date
FR2438499A1 true FR2438499A1 (fr) 1980-05-09
FR2438499B1 FR2438499B1 (fr) 1982-04-23

Family

ID=9213719

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7829265A Granted FR2438499A1 (fr) 1978-10-13 1978-10-13 Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante

Country Status (1)

Country Link
FR (1) FR2438499A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487808A1 (fr) * 1980-08-01 1982-02-05 Electricite De France Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif
EP0158563A1 (fr) * 1984-04-02 1985-10-16 Rhone-Poulenc Chimie Procédé de fabrication non polluant de silicium massif à partir de silicium divisé
FR2585690A1 (fr) * 1985-07-31 1987-02-06 Rhone Poulenc Spec Chim Procede de purification sous plasma de silicium divise
FR2594856A1 (fr) * 1986-02-27 1987-08-28 Photowatt Int Procede d'obtention de cristaux de silicium pour applications photovoltaiques
EP0274283A1 (fr) * 1987-01-08 1988-07-13 Rhone-Poulenc Chimie Procédé de purification sous plasma de silicium divisé
EP0459421A1 (fr) * 1990-05-30 1991-12-04 Kawasaki Steel Corporation Méthode et appareil pour purifier le silicium

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1581300A (fr) * 1967-09-09 1969-09-12
FR2171417A1 (fr) * 1972-02-09 1973-09-21 Vysoka Skola Banska Ostrava

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1581300A (fr) * 1967-09-09 1969-09-12
FR2171417A1 (fr) * 1972-02-09 1973-09-21 Vysoka Skola Banska Ostrava

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/64 *
EXBK/68 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487808A1 (fr) * 1980-08-01 1982-02-05 Electricite De France Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif
EP0045689A1 (fr) * 1980-08-01 1982-02-10 Electricite De France Procédé d'élimination du bore dans le silicium par fusion de zone sous plasma réactif
EP0158563A1 (fr) * 1984-04-02 1985-10-16 Rhone-Poulenc Chimie Procédé de fabrication non polluant de silicium massif à partir de silicium divisé
FR2585690A1 (fr) * 1985-07-31 1987-02-06 Rhone Poulenc Spec Chim Procede de purification sous plasma de silicium divise
FR2594856A1 (fr) * 1986-02-27 1987-08-28 Photowatt Int Procede d'obtention de cristaux de silicium pour applications photovoltaiques
EP0239794A1 (fr) * 1986-02-27 1987-10-07 Photowatt International S.A. Procédé d'obtention de cristaux de silicium pour applications photovoltaiques
EP0274283A1 (fr) * 1987-01-08 1988-07-13 Rhone-Poulenc Chimie Procédé de purification sous plasma de silicium divisé
EP0459421A1 (fr) * 1990-05-30 1991-12-04 Kawasaki Steel Corporation Méthode et appareil pour purifier le silicium

Also Published As

Publication number Publication date
FR2438499B1 (fr) 1982-04-23

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