FR2455921A2 - Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps - Google Patents
Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting stepsInfo
- Publication number
- FR2455921A2 FR2455921A2 FR7911607A FR7911607A FR2455921A2 FR 2455921 A2 FR2455921 A2 FR 2455921A2 FR 7911607 A FR7911607 A FR 7911607A FR 7911607 A FR7911607 A FR 7911607A FR 2455921 A2 FR2455921 A2 FR 2455921A2
- Authority
- FR
- France
- Prior art keywords
- melting
- plasma jet
- zone
- prepn
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The parent patent described a method of preparing crystals esp. Si by zone melting in which a polycrystalline ingot is placed in a boat, fused by a plasma jet and then the boat is displaced w.r.t. the plasma. In this addition, the ingot is pickled in acid between two such plasma fusion treatments. The heat necessary to fuse the zone is provided with a plasma jet at 10000-15000 K. The temp. distribution inside the molten zone is rotated about the axis of the plasma jet with max. at the surface and a min. at the lower part which is in contact with the boat. Improved purificn. is achieved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7911607A FR2455921A2 (en) | 1979-05-08 | 1979-05-08 | Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7911607A FR2455921A2 (en) | 1979-05-08 | 1979-05-08 | Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2455921A2 true FR2455921A2 (en) | 1980-12-05 |
FR2455921B2 FR2455921B2 (en) | 1982-10-08 |
Family
ID=9225187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7911607A Granted FR2455921A2 (en) | 1979-05-08 | 1979-05-08 | Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2455921A2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2996374A (en) * | 1958-11-13 | 1961-08-15 | Texas Instruments Inc | Method of zone refining for impurities having segregation coefficients greater than unity |
US3030194A (en) * | 1953-02-14 | 1962-04-17 | Siemens Ag | Processing of semiconductor devices |
FR2171417A1 (en) * | 1972-02-09 | 1973-09-21 | Vysoka Skola Banska Ostrava |
-
1979
- 1979-05-08 FR FR7911607A patent/FR2455921A2/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3030194A (en) * | 1953-02-14 | 1962-04-17 | Siemens Ag | Processing of semiconductor devices |
US2996374A (en) * | 1958-11-13 | 1961-08-15 | Texas Instruments Inc | Method of zone refining for impurities having segregation coefficients greater than unity |
FR2171417A1 (en) * | 1972-02-09 | 1973-09-21 | Vysoka Skola Banska Ostrava |
Also Published As
Publication number | Publication date |
---|---|
FR2455921B2 (en) | 1982-10-08 |
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