JPS5637292A - Crystal growing method - Google Patents

Crystal growing method

Info

Publication number
JPS5637292A
JPS5637292A JP11324579A JP11324579A JPS5637292A JP S5637292 A JPS5637292 A JP S5637292A JP 11324579 A JP11324579 A JP 11324579A JP 11324579 A JP11324579 A JP 11324579A JP S5637292 A JPS5637292 A JP S5637292A
Authority
JP
Japan
Prior art keywords
ingot
crystal
chamber
grow
shafts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11324579A
Other languages
Japanese (ja)
Inventor
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11324579A priority Critical patent/JPS5637292A/en
Publication of JPS5637292A publication Critical patent/JPS5637292A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow a crystal by moving a melt zone while melting part of a crystal ingot or the like with laser beams or electron beams to sharpen the temp. gradient.
CONSTITUTION: Predetermined ingot 11 such as InSb ingot contg. Ge as impurity is supported between shafts 6, 7, H2-He mixed gas is fed into chamber 1 from gas introduction pipe 2 of chamber 1, and chamber 1 is cooled with water-cooled pipes 8 while exhausting the gas from exhaust pipe 3. Laser generator 9 is then switched on to irradiate rotating ingot 11 through transmissive window 4a, and while being locally melted, ingot 11 is moved upward with shafts 6, 7, whereby melt zone 12 is moved to grow a crystal. By this method crystallization can be performed with a very uniform impurity concn. in the growing direction even if the crystal ingot used has a high impurity concn.
COPYRIGHT: (C)1981,JPO&Japio
JP11324579A 1979-09-04 1979-09-04 Crystal growing method Pending JPS5637292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11324579A JPS5637292A (en) 1979-09-04 1979-09-04 Crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11324579A JPS5637292A (en) 1979-09-04 1979-09-04 Crystal growing method

Publications (1)

Publication Number Publication Date
JPS5637292A true JPS5637292A (en) 1981-04-10

Family

ID=14607242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11324579A Pending JPS5637292A (en) 1979-09-04 1979-09-04 Crystal growing method

Country Status (1)

Country Link
JP (1) JPS5637292A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051688A (en) * 1983-08-29 1985-03-23 Nippon Hoso Kyokai <Nhk> Segregating method of impurity

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051688A (en) * 1983-08-29 1985-03-23 Nippon Hoso Kyokai <Nhk> Segregating method of impurity
JPH0377156B2 (en) * 1983-08-29 1991-12-09 Japan Broadcasting Corp

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