JPS5767018A - Formation of film - Google Patents

Formation of film

Info

Publication number
JPS5767018A
JPS5767018A JP14039580A JP14039580A JPS5767018A JP S5767018 A JPS5767018 A JP S5767018A JP 14039580 A JP14039580 A JP 14039580A JP 14039580 A JP14039580 A JP 14039580A JP S5767018 A JPS5767018 A JP S5767018A
Authority
JP
Japan
Prior art keywords
plate
films
quartz glass
rod
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14039580A
Other languages
Japanese (ja)
Inventor
Motohiro Nakahara
Takao Edahiro
Nobuo Inagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14039580A priority Critical patent/JPS5767018A/en
Publication of JPS5767018A publication Critical patent/JPS5767018A/en
Pending legal-status Critical Current

Links

Landscapes

  • Surface Treatment Of Glass (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To form uniform thin silicon films of high quality and large area in a simple process by dipping a quartz glass plate in a silicon melt and pulling up it slowly.
CONSTITUTION: A quartz glass plate 2 attached to the tip of a seed rod 1 is dipped in a silicon melt 3 in a quartz glass crucible 4 provided with a carbon heater 5 and a high frequency coil 6 until the joint between the plate 2 and the rod 1 reaches the melt 3. The plate 2 is the pulled up at about 10W50mm/hr rate while rotating the rod 1. Thus, thin silicon films are formed on both sides of the plate 2. Said operation is conducted in an atmosphere of an inert gas such as nitrogen or Ar. When the temp. of the silicon melt is about 1,500°C and the pulling rate is about 10mm/hr, single crystal films are obtd. When the temp. is about 1,450°C and the pulling rate is about 50mm/hr, polycrystalline films are obtd.
COPYRIGHT: (C)1982,JPO&Japio
JP14039580A 1980-10-09 1980-10-09 Formation of film Pending JPS5767018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14039580A JPS5767018A (en) 1980-10-09 1980-10-09 Formation of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14039580A JPS5767018A (en) 1980-10-09 1980-10-09 Formation of film

Publications (1)

Publication Number Publication Date
JPS5767018A true JPS5767018A (en) 1982-04-23

Family

ID=15267792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14039580A Pending JPS5767018A (en) 1980-10-09 1980-10-09 Formation of film

Country Status (1)

Country Link
JP (1) JPS5767018A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007204353A (en) * 2006-02-06 2007-08-16 Univ Of Tsukuba Method for depositing silicon crystal and silicon crystal material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5337184A (en) * 1977-09-05 1978-04-06 Toshiba Corp Epitaxially growing method in liquid phase
JPS54134083A (en) * 1978-04-11 1979-10-18 Agency Of Ind Science & Technol Belt type silicon crystallizer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5337184A (en) * 1977-09-05 1978-04-06 Toshiba Corp Epitaxially growing method in liquid phase
JPS54134083A (en) * 1978-04-11 1979-10-18 Agency Of Ind Science & Technol Belt type silicon crystallizer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007204353A (en) * 2006-02-06 2007-08-16 Univ Of Tsukuba Method for depositing silicon crystal and silicon crystal material

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