JPS56129696A - Crystal growing apparatus - Google Patents
Crystal growing apparatusInfo
- Publication number
- JPS56129696A JPS56129696A JP3032580A JP3032580A JPS56129696A JP S56129696 A JPS56129696 A JP S56129696A JP 3032580 A JP3032580 A JP 3032580A JP 3032580 A JP3032580 A JP 3032580A JP S56129696 A JPS56129696 A JP S56129696A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growing apparatus
- crystal growing
- furnace
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a crystal of high quality by coating the outer heat insulating member of the double-layered heat -insulated section of a crystal growing apparatus with silicon nitride to prevent carbon from mixing into a crystal.
CONSTITUTION: When polycrystalline silicon 10 or the like is put in quartz crucible 1 of the crystal growing apparatus and heated with heater 4, outer carbon felt member 5b of heat insulated section 5 is coated with silicon nitride to prevent carbon fine powder from scattering in the furnace. In order to carry out the coating, carbon felt molded into the predetermined form is put in a furnace in an inert atmosphere, heated to about 1,200W1,700°C, and kept for a predetermined time after feeding silane and ammonia. The thickness of the coat is suitably about 50W 100μ. Thus, a single crystal of high quality is obtd.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3032580A JPS56129696A (en) | 1980-03-12 | 1980-03-12 | Crystal growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3032580A JPS56129696A (en) | 1980-03-12 | 1980-03-12 | Crystal growing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56129696A true JPS56129696A (en) | 1981-10-09 |
Family
ID=12300648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3032580A Pending JPS56129696A (en) | 1980-03-12 | 1980-03-12 | Crystal growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56129696A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166793A (en) * | 1986-12-26 | 1988-07-09 | Toshiba Ceramics Co Ltd | Pulling up device for silicon single crystal |
| JPH0193489A (en) * | 1987-10-01 | 1989-04-12 | Kyushu Electron Metal Co Ltd | Production of single crystal for semiconductor |
| KR20030050334A (en) * | 2001-12-18 | 2003-06-25 | 주식회사 실트론 | Apparatus of growing a single silicon ingot |
| JP2009150637A (en) * | 2007-12-21 | 2009-07-09 | Green Energy Technology Inc | Crystal-growing furnace with convectional cooling structure |
| JP2009198155A (en) * | 2008-02-19 | 2009-09-03 | Green Energy Technology Inc | Crystal-growing furnace system |
-
1980
- 1980-03-12 JP JP3032580A patent/JPS56129696A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166793A (en) * | 1986-12-26 | 1988-07-09 | Toshiba Ceramics Co Ltd | Pulling up device for silicon single crystal |
| JPH0193489A (en) * | 1987-10-01 | 1989-04-12 | Kyushu Electron Metal Co Ltd | Production of single crystal for semiconductor |
| KR20030050334A (en) * | 2001-12-18 | 2003-06-25 | 주식회사 실트론 | Apparatus of growing a single silicon ingot |
| JP2009150637A (en) * | 2007-12-21 | 2009-07-09 | Green Energy Technology Inc | Crystal-growing furnace with convectional cooling structure |
| JP2009198155A (en) * | 2008-02-19 | 2009-09-03 | Green Energy Technology Inc | Crystal-growing furnace system |
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