JPS6473078A - C.v.d. device - Google Patents
C.v.d. deviceInfo
- Publication number
- JPS6473078A JPS6473078A JP22870987A JP22870987A JPS6473078A JP S6473078 A JPS6473078 A JP S6473078A JP 22870987 A JP22870987 A JP 22870987A JP 22870987 A JP22870987 A JP 22870987A JP S6473078 A JPS6473078 A JP S6473078A
- Authority
- JP
- Japan
- Prior art keywords
- reaction furnace
- furnace
- vessel
- reaction
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To prevent the adhesion of the deposit of CVD reaction by a gaseous raw material to the inside wall of a CVD reaction furnace which contains a material to be treated and has an induction heating coil on the outside by putting the above-mentioned reaction furnace into a vessel and passing a cooling medium between the vessel and the reaction furnace. CONSTITUTION:A graphite material or the like is put as the base material 4 to be treated into the reaction furnace 6 made of quartz, Al2O3, etc., and Si(CH3)2 is supplied as the gaseous raw material together with an N2 carrier gas from a gas introducing port 2 into the furnace. The material 4 is heated to, for example, 1,300 deg.C by the induction heating coil 7 on the outside of the reaction furnace and the film of SiC is formed on the surface thereof by the CVD reaction of the gaseous raw material. An inert gas such as N2 or Ar is introduced simultaneously as the cooling medium into the space between the vessel 1 and the reaction furnace 6 to cool the reaction furnace 6, by which the deposition and adhesion of the SiC on the inside wall of the reaction furnace 6 are prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22870987A JPS6473078A (en) | 1987-09-11 | 1987-09-11 | C.v.d. device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22870987A JPS6473078A (en) | 1987-09-11 | 1987-09-11 | C.v.d. device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473078A true JPS6473078A (en) | 1989-03-17 |
Family
ID=16880578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22870987A Pending JPS6473078A (en) | 1987-09-11 | 1987-09-11 | C.v.d. device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473078A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5690050A (en) * | 1995-05-10 | 1997-11-25 | Anelva Corporation | Plasma treating apparatus and plasma treating method |
| JP2008159945A (en) * | 2006-12-25 | 2008-07-10 | Tokyo Electron Ltd | Apparatus and method for forming film |
| CN102312219A (en) * | 2010-06-30 | 2012-01-11 | 鸿富锦精密工业（深圳）有限公司 | Coating device |
| US8784564B2 (en) | 2010-06-29 | 2014-07-22 | Hon Hai Precision Industry Co., Ltd. | Film coating apparatus |
-
1987
- 1987-09-11 JP JP22870987A patent/JPS6473078A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5690050A (en) * | 1995-05-10 | 1997-11-25 | Anelva Corporation | Plasma treating apparatus and plasma treating method |
| JP2008159945A (en) * | 2006-12-25 | 2008-07-10 | Tokyo Electron Ltd | Apparatus and method for forming film |
| US8784564B2 (en) | 2010-06-29 | 2014-07-22 | Hon Hai Precision Industry Co., Ltd. | Film coating apparatus |
| CN102312219A (en) * | 2010-06-30 | 2012-01-11 | 鸿富锦精密工业（深圳）有限公司 | Coating device |
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