JPS55149199A - Vapor phase deposition method under reduced pressure - Google Patents

Vapor phase deposition method under reduced pressure

Info

Publication number
JPS55149199A
JPS55149199A JP5613579A JP5613579A JPS55149199A JP S55149199 A JPS55149199 A JP S55149199A JP 5613579 A JP5613579 A JP 5613579A JP 5613579 A JP5613579 A JP 5613579A JP S55149199 A JPS55149199 A JP S55149199A
Authority
JP
Japan
Prior art keywords
layer
reduced pressure
grown
vapor phase
method under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5613579A
Other languages
Japanese (ja)
Other versions
JPS623119B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5613579A priority Critical patent/JPS55149199A/en
Publication of JPS55149199A publication Critical patent/JPS55149199A/en
Publication of JPS623119B2 publication Critical patent/JPS623119B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To deposit and coat efficiently a grown layer onto a thin layer of a predetermined thickness or less mounted on a susceptor in a vapor phase without dropping the thin layer by setting a reduced pressure of a predetermined range while carrying out high frequency induction heating. CONSTITUTION:On new sample stand 26' in reaction tube 22, Si-SiC mixed layer 4 grown on Si substrate 2 placed on sample stand 26 is mounted with the surface contacted to substrate 2 upward. The thickness of layer 4 as a seed layer is 100mum or less. While carrying out high frequency induction heating 28, secondary SiC layer 15 is grown by a CVD (chemical vapor deposition) method under atmospheric pressure to a reduced pressure of 10 Torr. For exmaple, SiH2Cl2 and C3H8 are used as starting materials, and H2 is used as carrier gas. The heating temp. is e.g., 1,700 deg.C.
JP5613579A 1979-05-07 1979-05-07 Vapor phase deposition method under reduced pressure Granted JPS55149199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5613579A JPS55149199A (en) 1979-05-07 1979-05-07 Vapor phase deposition method under reduced pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5613579A JPS55149199A (en) 1979-05-07 1979-05-07 Vapor phase deposition method under reduced pressure

Publications (2)

Publication Number Publication Date
JPS55149199A true JPS55149199A (en) 1980-11-20
JPS623119B2 JPS623119B2 (en) 1987-01-23

Family

ID=13018624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5613579A Granted JPS55149199A (en) 1979-05-07 1979-05-07 Vapor phase deposition method under reduced pressure

Country Status (1)

Country Link
JP (1) JPS55149199A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6270297A (en) * 1985-09-24 1987-03-31 Sharp Corp Production of silicon carbide single crystal substrate
JP2012009432A (en) * 2010-05-28 2012-01-12 Semiconductor Energy Lab Co Ltd Electric storage device and manufacturing method for the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6270297A (en) * 1985-09-24 1987-03-31 Sharp Corp Production of silicon carbide single crystal substrate
JP2012009432A (en) * 2010-05-28 2012-01-12 Semiconductor Energy Lab Co Ltd Electric storage device and manufacturing method for the same
US9136530B2 (en) 2010-05-28 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Energy storage device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS623119B2 (en) 1987-01-23

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