JPS55149199A - Vapor phase deposition method under reduced pressure - Google Patents
Vapor phase deposition method under reduced pressureInfo
- Publication number
- JPS55149199A JPS55149199A JP5613579A JP5613579A JPS55149199A JP S55149199 A JPS55149199 A JP S55149199A JP 5613579 A JP5613579 A JP 5613579A JP 5613579 A JP5613579 A JP 5613579A JP S55149199 A JPS55149199 A JP S55149199A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- reduced pressure
- grown
- vapor phase
- method under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To deposit and coat efficiently a grown layer onto a thin layer of a predetermined thickness or less mounted on a susceptor in a vapor phase without dropping the thin layer by setting a reduced pressure of a predetermined range while carrying out high frequency induction heating. CONSTITUTION:On new sample stand 26' in reaction tube 22, Si-SiC mixed layer 4 grown on Si substrate 2 placed on sample stand 26 is mounted with the surface contacted to substrate 2 upward. The thickness of layer 4 as a seed layer is 100mum or less. While carrying out high frequency induction heating 28, secondary SiC layer 15 is grown by a CVD (chemical vapor deposition) method under atmospheric pressure to a reduced pressure of 10 Torr. For exmaple, SiH2Cl2 and C3H8 are used as starting materials, and H2 is used as carrier gas. The heating temp. is e.g., 1,700 deg.C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5613579A JPS55149199A (en) | 1979-05-07 | 1979-05-07 | Vapor phase deposition method under reduced pressure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5613579A JPS55149199A (en) | 1979-05-07 | 1979-05-07 | Vapor phase deposition method under reduced pressure |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55149199A true JPS55149199A (en) | 1980-11-20 |
JPS623119B2 JPS623119B2 (en) | 1987-01-23 |
Family
ID=13018624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5613579A Granted JPS55149199A (en) | 1979-05-07 | 1979-05-07 | Vapor phase deposition method under reduced pressure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55149199A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6270297A (en) * | 1985-09-24 | 1987-03-31 | Sharp Corp | Production of silicon carbide single crystal substrate |
JP2012009432A (en) * | 2010-05-28 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | Electric storage device and manufacturing method for the same |
-
1979
- 1979-05-07 JP JP5613579A patent/JPS55149199A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6270297A (en) * | 1985-09-24 | 1987-03-31 | Sharp Corp | Production of silicon carbide single crystal substrate |
JP2012009432A (en) * | 2010-05-28 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | Electric storage device and manufacturing method for the same |
US9136530B2 (en) | 2010-05-28 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Energy storage device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS623119B2 (en) | 1987-01-23 |
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