JPS54128988A - Preparation of single crystal - Google Patents
Preparation of single crystalInfo
- Publication number
- JPS54128988A JPS54128988A JP3683078A JP3683078A JPS54128988A JP S54128988 A JPS54128988 A JP S54128988A JP 3683078 A JP3683078 A JP 3683078A JP 3683078 A JP3683078 A JP 3683078A JP S54128988 A JPS54128988 A JP S54128988A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- single crystal
- outside
- refractory
- reflective plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent the transformation by high temperature of after heater or reflective plate and to manufacture a high quality oxidation single crystal with a good reproducibility, by incorporating the after heater or reflective plate provided on the upper part of high temperature crystal molten liquid and refractory heat retaining cover provided on the outside, with refractory bonding agent in a body.
CONSTITUTION: The refractory vessel 3 is provided on the outside of the crucible 1 made of Rh- Pt through the heat insulating material 2 moreover and the reflective plate 4 is provided on the upper part of the vessel 3. The plate 4 is made by 0.4 mm thickness dome-shaped reflective plate made of Rh-Pt and notch is provided in growing direction of single crystal. Also, the cylindrical cover made of alumina 6 is provided on the outside of the plate 4 and refractory bonding agent, for example, the alumina cement 7, is filled between the plate 4 and the cover 6 and also, the high-frequency coil 8 is provided on the outside of the above apparatus. By the above construction, the LiTaO3 molten liquid 9 is placed in the crucible 1 and LiTaO3 single crystal is pulled up inserting seed crystal from the upper part of liquid 9. On this occasion, the liquid is heated at 1650°C, but the plate 4 is not transformed for many hours and as a result of it, temperature distribution in the furnace is not changed and then, the single crystal having uniform quality, is able to pull up.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3683078A JPS54128988A (en) | 1978-03-31 | 1978-03-31 | Preparation of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3683078A JPS54128988A (en) | 1978-03-31 | 1978-03-31 | Preparation of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54128988A true JPS54128988A (en) | 1979-10-05 |
Family
ID=12480654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3683078A Pending JPS54128988A (en) | 1978-03-31 | 1978-03-31 | Preparation of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54128988A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190298A (en) * | 1983-04-12 | 1984-10-29 | Toshiba Corp | Device for producing semiconductor single crystal |
| JP2007326730A (en) * | 2006-06-07 | 2007-12-20 | Tokuyama Corp | Apparatus for pulling metal fluoride single crystal |
| CN102492981A (en) * | 2011-12-09 | 2012-06-13 | 中山兆龙光电科技有限公司 | Antioxidative bubble generation furnace and preparation method thereof |
| US8293007B2 (en) | 2007-06-14 | 2012-10-23 | Max Era, Inc. | Removable thermal control for ribbon crystal pulling furnaces |
-
1978
- 1978-03-31 JP JP3683078A patent/JPS54128988A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190298A (en) * | 1983-04-12 | 1984-10-29 | Toshiba Corp | Device for producing semiconductor single crystal |
| JP2007326730A (en) * | 2006-06-07 | 2007-12-20 | Tokuyama Corp | Apparatus for pulling metal fluoride single crystal |
| US8293007B2 (en) | 2007-06-14 | 2012-10-23 | Max Era, Inc. | Removable thermal control for ribbon crystal pulling furnaces |
| CN102492981A (en) * | 2011-12-09 | 2012-06-13 | 中山兆龙光电科技有限公司 | Antioxidative bubble generation furnace and preparation method thereof |
| CN102492981B (en) * | 2011-12-09 | 2015-01-14 | 中山兆龙光电科技有限公司 | Antioxidative bubble generation furnace and preparation method thereof |
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