JPS6456392A - Method for growing single crystal - Google Patents
Method for growing single crystalInfo
- Publication number
- JPS6456392A JPS6456392A JP21293287A JP21293287A JPS6456392A JP S6456392 A JPS6456392 A JP S6456392A JP 21293287 A JP21293287 A JP 21293287A JP 21293287 A JP21293287 A JP 21293287A JP S6456392 A JPS6456392 A JP S6456392A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- bottom plate
- metal
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To improve the stability of a crucible, to promote escape of heat from the crucible, to exclude disturbance at the time of solidifying a melt, and to obtain a large-diameter and high-quality single crystal by interposing the same material as the single crystal forming metal between the crucible of the Bridgman's single crystal growth device and a crucible holder. CONSTITUTION:The crucible 1 of the Bridgman's single crystal growth device having the diameter corresponding to the desired single crystal and made of the material (e.g., alumina, graphite, silica, and nitrides) is set on the metallic crucible holder 3 placed on a bottom plate, whose protrusion 7 from the bottom end pierces the bottom plate 5 and penetrates into an internally-cooled lifting shaft 9, and having excellent strength and heat conductivity with the same material 20 as the single crystal material in between. A single crystal forming metal such as copper or an alloy M is then charged in the crucible 1, the crucible 1 is heated by a heater 10 through the protecting tube 14 made of graphite, etc., and fixed to the outer periphery of the bottom plate 5 to melt the metal M and the intervening metal 20, the crucible 1 is closely attached to the crucible holder 3 to promote the heat flow in the vertical direction, and a single crystal is grown.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21293287A JPS6456392A (en) | 1987-08-28 | 1987-08-28 | Method for growing single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21293287A JPS6456392A (en) | 1987-08-28 | 1987-08-28 | Method for growing single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6456392A true JPS6456392A (en) | 1989-03-03 |
Family
ID=16630680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21293287A Pending JPS6456392A (en) | 1987-08-28 | 1987-08-28 | Method for growing single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6456392A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0458177A (en) * | 1990-06-27 | 1992-02-25 | Robotec Kenkyusho:Kk | Fm radar |
JP2013184884A (en) * | 2012-03-12 | 2013-09-19 | Shin-Etsu Chemical Co Ltd | Single crystal producing method and single crystal producing apparatus |
-
1987
- 1987-08-28 JP JP21293287A patent/JPS6456392A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0458177A (en) * | 1990-06-27 | 1992-02-25 | Robotec Kenkyusho:Kk | Fm radar |
JP2013184884A (en) * | 2012-03-12 | 2013-09-19 | Shin-Etsu Chemical Co Ltd | Single crystal producing method and single crystal producing apparatus |
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