JPS57149894A - Method and apparatus for growing grystal - Google Patents

Method and apparatus for growing grystal

Info

Publication number
JPS57149894A
JPS57149894A JP3245181A JP3245181A JPS57149894A JP S57149894 A JPS57149894 A JP S57149894A JP 3245181 A JP3245181 A JP 3245181A JP 3245181 A JP3245181 A JP 3245181A JP S57149894 A JPS57149894 A JP S57149894A
Authority
JP
Japan
Prior art keywords
crystal
melt
center line
growing
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3245181A
Other languages
Japanese (ja)
Other versions
JPS621357B2 (en
Inventor
Hiroshi Hirata
Keigo Hoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3245181A priority Critical patent/JPS57149894A/en
Publication of JPS57149894A publication Critical patent/JPS57149894A/en
Publication of JPS621357B2 publication Critical patent/JPS621357B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To eliminate the ununiformity of a crystal due to heat convection and to reduce the size and weight of the apparatus in a method for growing a crystal from a melt of an electrically conductive substance by pulling, by applying a sufficiently intense DC magnetic field symmetrically with respect to the center line of rotation of the melt.
CONSTITUTION: By electrifying a heating element 2, a melt 3 of a prescribed substance is prepared in a crucible 1, and a seed crystal 5 of a single crystal having a uniform crystal direction is placed on the center line 4 of rotation of the melt 3 and brought into contact with the melt 3. The support 6 of the crystal 5 is slowly pulled up to grow a single crystal 7 having the same crystal orientation as the crystal 5. At this time, a DC magnetic field 16 which is symmetrical with respect to the center line 4 and has ≥1,000 Oe intensity at the central part is applied to the whole or a part of the melt 3 by supplying DC 15 to a solenoid 14 concentric with the outer heating element 2.
COPYRIGHT: (C)1982,JPO&Japio
JP3245181A 1981-03-09 1981-03-09 Method and apparatus for growing grystal Granted JPS57149894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3245181A JPS57149894A (en) 1981-03-09 1981-03-09 Method and apparatus for growing grystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3245181A JPS57149894A (en) 1981-03-09 1981-03-09 Method and apparatus for growing grystal

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP13800186A Division JPS623093A (en) 1986-06-13 1986-06-13 Crystal growth apparatus

Publications (2)

Publication Number Publication Date
JPS57149894A true JPS57149894A (en) 1982-09-16
JPS621357B2 JPS621357B2 (en) 1987-01-13

Family

ID=12359327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3245181A Granted JPS57149894A (en) 1981-03-09 1981-03-09 Method and apparatus for growing grystal

Country Status (1)

Country Link
JP (1) JPS57149894A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016891A (en) * 1983-07-04 1985-01-28 Nippon Telegr & Teleph Corp <Ntt> Preparation of crystal by application of magnetic field and its device
JPS6033294A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Pulling device for single crystal semiconductor
JPS6036392A (en) * 1983-08-05 1985-02-25 Toshiba Corp Apparatus for pulling single crystal
JPS60221392A (en) * 1984-04-16 1985-11-06 Toshiba Corp Device for forming single crystal
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01236559A (en) * 1988-03-16 1989-09-21 Matsushita Electric Ind Co Ltd Image display device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016891A (en) * 1983-07-04 1985-01-28 Nippon Telegr & Teleph Corp <Ntt> Preparation of crystal by application of magnetic field and its device
JPS6033294A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Pulling device for single crystal semiconductor
JPH0359040B2 (en) * 1983-07-29 1991-09-09 Toshiba Ceramics Co
JPS6036392A (en) * 1983-08-05 1985-02-25 Toshiba Corp Apparatus for pulling single crystal
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS60221392A (en) * 1984-04-16 1985-11-06 Toshiba Corp Device for forming single crystal
JPH0478591B2 (en) * 1984-04-16 1992-12-11 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS621357B2 (en) 1987-01-13

Similar Documents

Publication Publication Date Title
EP0229322A3 (en) Method and apparatus for czochralski single crystal growing
JPS57149894A (en) Method and apparatus for growing grystal
JPS56104791A (en) Growth of crystal
JPS55166004A (en) Method of and apparatus for measuring diameter of monocrystal pulled from crucible
KR19980018074A (en) Magnetic field generator
JPS5645889A (en) Growing method of semiconductor single crystal
JPS5567596A (en) Single crystal growing method
JPS62256788A (en) Device for growing single crystal
JPS5490086A (en) Method of producing single crystal
JPS57118091A (en) Manufacturing apparatus for beltlike silicon crystal
JPS57170890A (en) Growing method for single crystal
JPS55130894A (en) Single crystal picking up apparatus
JPS5795889A (en) Crystal growing device
EP0135676A3 (en) Apparatus for growing czochralski crystals and growth method using such apparatus
JPS5688895A (en) Growth of single crystal
JPS5654299A (en) Growing method of lead molybdate single crystal
JPS6487592A (en) Single crystal growing device
JPS5659693A (en) Beltlike crystal manufacturing apparatus
JPS57179095A (en) Method and apparatus for manufacturing single crystal
KR880004140A (en) Crystal Growth Method
SU1466275A1 (en) Device for pulling the crystal from melt
JPS56100195A (en) Growing method for semiconductor single crystal
JPS645992A (en) Method for growing crystal
JPS57183398A (en) Preparation of lithium niobate single crystal
Alimov et al. Production of Germanium Monocrystals by Chochralski Method Using Magnetic Field