JPS5645889A - Growing method of semiconductor single crystal - Google Patents

Growing method of semiconductor single crystal

Info

Publication number
JPS5645889A
JPS5645889A JP12133979A JP12133979A JPS5645889A JP S5645889 A JPS5645889 A JP S5645889A JP 12133979 A JP12133979 A JP 12133979A JP 12133979 A JP12133979 A JP 12133979A JP S5645889 A JPS5645889 A JP S5645889A
Authority
JP
Japan
Prior art keywords
melt
single crystal
magnetic field
semiconductor
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12133979A
Other languages
Japanese (ja)
Other versions
JPS5850951B2 (en
Inventor
Toshihiko Suzuki
Nobuyuki Izawa
Yasunori Okubo
Kinji Hoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12133979A priority Critical patent/JPS5850951B2/en
Priority to GB8029356A priority patent/GB2059932B/en
Priority to FR8019942A priority patent/FR2465802B1/en
Priority to DE19803035267 priority patent/DE3035267A1/en
Priority to CA000360638A priority patent/CA1177367A/en
Priority to IT24803/80A priority patent/IT1141064B/en
Priority to NL8005228A priority patent/NL8005228A/en
Priority to SU2992247A priority patent/SU1258329A3/en
Priority to SE8006569A priority patent/SE8006569L/en
Priority to AT0473180A priority patent/AT398582B/en
Publication of JPS5645889A publication Critical patent/JPS5645889A/en
Priority to US06/339,065 priority patent/US4619730A/en
Publication of JPS5850951B2 publication Critical patent/JPS5850951B2/en
Priority to US06/562,015 priority patent/US4622211A/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To efficiently obtain a semiconductor single crystal with uniform characteristics by arranging a heating means with a direct current around a container holding a semiconductor crystal growing melt and by applying a magnetic field of a predetermined direction to perform stable crystal growth.
CONSTITUTION: Heating means 4 is arranged around container 2 holding semiconductor melt 3 such as Si melt so that current heater 5 forms a cylindrical plane along the outside of container 2 in a zigzag pattern, and magnetic field generating means 7 is set outside means 4. Seed single crystal 8 can be pulled up with chuck 9. When a direct current of 3% ripple is supplied to heater 5 of means 4 in a 4,100G magnetic field generated with means 7 to carry out heating, the outlines of the surface of melt 3 can be observed clearly and the surface undergoes little vibration. Thus, a high quality single crystal can be grown stably.
COPYRIGHT: (C)1981,JPO&Japio
JP12133979A 1979-09-20 1979-09-20 Crystal growth method and crystal growth equipment used for this method Expired JPS5850951B2 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP12133979A JPS5850951B2 (en) 1979-09-20 1979-09-20 Crystal growth method and crystal growth equipment used for this method
GB8029356A GB2059932B (en) 1979-09-20 1980-09-11 Solidification processes
FR8019942A FR2465802B1 (en) 1979-09-20 1980-09-16 PROCESS FOR SOLIDIFYING A FLUID SUCH AS A SILICON BATH AND PROCESS OBTAINED
DE19803035267 DE3035267A1 (en) 1979-09-20 1980-09-18 METHOD FOR STRENGTHENING LIQUID MATERIALS
SU2992247A SU1258329A3 (en) 1979-09-20 1980-09-19 Method of growing silicon crystals
IT24803/80A IT1141064B (en) 1979-09-20 1980-09-19 SOLIDIFICATION PROCESS
NL8005228A NL8005228A (en) 1979-09-20 1980-09-19 METHOD FOR PROCESSING THE TRANSITION IN FIXED STATE.
CA000360638A CA1177367A (en) 1979-09-20 1980-09-19 Process for solidification
SE8006569A SE8006569L (en) 1979-09-20 1980-09-19 STELNINGSFORFARANDE
AT0473180A AT398582B (en) 1979-09-20 1980-09-22 CRYSTAL GROWING METHOD
US06/339,065 US4619730A (en) 1979-09-20 1982-01-13 Process for solidification in a magnetic field with a D.C. heater
US06/562,015 US4622211A (en) 1979-09-20 1983-12-16 Apparatus for solidification with resistance heater and magnets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12133979A JPS5850951B2 (en) 1979-09-20 1979-09-20 Crystal growth method and crystal growth equipment used for this method

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP8943080A Division JPS5645890A (en) 1980-06-30 1980-06-30 Crystal growing apparatus
JP16465284A Division JPS60155595A (en) 1984-08-06 1984-08-06 Method for growing crystal

Publications (2)

Publication Number Publication Date
JPS5645889A true JPS5645889A (en) 1981-04-25
JPS5850951B2 JPS5850951B2 (en) 1983-11-14

Family

ID=14808803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12133979A Expired JPS5850951B2 (en) 1979-09-20 1979-09-20 Crystal growth method and crystal growth equipment used for this method

Country Status (1)

Country Link
JP (1) JPS5850951B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011295A (en) * 1983-06-30 1985-01-21 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Crystal growing device
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS6236096A (en) * 1985-08-07 1987-02-17 Kawasaki Steel Corp Production of single crystal and device therefor
AT399420B (en) * 1985-11-12 1995-05-26 Sony Corp METHOD FOR PRODUCING A SOLID-IMAGE IMAGING DEVICE
US5840116A (en) * 1994-03-31 1998-11-24 Sumitomo Sitix Corporation Method of growing crystals
US6733585B2 (en) 2000-02-01 2004-05-11 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011295A (en) * 1983-06-30 1985-01-21 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Crystal growing device
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS6236096A (en) * 1985-08-07 1987-02-17 Kawasaki Steel Corp Production of single crystal and device therefor
JPH0329751B2 (en) * 1985-08-07 1991-04-25
AT399420B (en) * 1985-11-12 1995-05-26 Sony Corp METHOD FOR PRODUCING A SOLID-IMAGE IMAGING DEVICE
US5840116A (en) * 1994-03-31 1998-11-24 Sumitomo Sitix Corporation Method of growing crystals
US6733585B2 (en) 2000-02-01 2004-05-11 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
US6977010B2 (en) 2000-02-01 2005-12-20 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
US7244309B2 (en) 2000-02-01 2007-07-17 Sumco Techxiv Corporation Apparatus for pulling single crystal by CZ method
US7727334B2 (en) 2000-02-01 2010-06-01 Sumco Techxiv Corporation Apparatus for pulling single crystal by CZ method
US8002893B2 (en) 2000-02-01 2011-08-23 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method

Also Published As

Publication number Publication date
JPS5850951B2 (en) 1983-11-14

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