JPS55130894A - Single crystal picking up apparatus - Google Patents

Single crystal picking up apparatus

Info

Publication number
JPS55130894A
JPS55130894A JP3548579A JP3548579A JPS55130894A JP S55130894 A JPS55130894 A JP S55130894A JP 3548579 A JP3548579 A JP 3548579A JP 3548579 A JP3548579 A JP 3548579A JP S55130894 A JPS55130894 A JP S55130894A
Authority
JP
Japan
Prior art keywords
single crystal
molten liquid
picking
stock material
seed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3548579A
Other languages
Japanese (ja)
Inventor
Akira Yoshinaka
Takaaki Aoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3548579A priority Critical patent/JPS55130894A/en
Publication of JPS55130894A publication Critical patent/JPS55130894A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make it possible to prepare a single crystal with an uniform dopant concn. by a method wherein, in a Czochralski type single crystal picking up apparatus, a stock material replenishing tank having a heating system is provided to a side portion of a crusible.
CONSTITUTION: A seed crystal 5 is attached to a chuck portion 4 of a picking up shaft 3 and a lower end of a seed crystal 5 is immersed in a molten liquid 6 and a picking up shaft 3 is gradually lifted to grow a single crystal 7 on a lower end of a seed crystal 5 successively. In this case, a molten liquid 6 is rotated by a molten liquid rotating sytem 12 forming a rotary magnetic field. When a molten liquid within a crusible 1 is reduced according to the growth of a single crystal 7, a stock material 10 and a dopant 11 are thrown into a stock material replenishing tank 8 so as to maintain a liquid level of a molten liquid 6 and a dopant concn. constantly.
COPYRIGHT: (C)1980,JPO&Japio
JP3548579A 1979-03-28 1979-03-28 Single crystal picking up apparatus Pending JPS55130894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3548579A JPS55130894A (en) 1979-03-28 1979-03-28 Single crystal picking up apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3548579A JPS55130894A (en) 1979-03-28 1979-03-28 Single crystal picking up apparatus

Publications (1)

Publication Number Publication Date
JPS55130894A true JPS55130894A (en) 1980-10-11

Family

ID=12443043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3548579A Pending JPS55130894A (en) 1979-03-28 1979-03-28 Single crystal picking up apparatus

Country Status (1)

Country Link
JP (1) JPS55130894A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130195A (en) * 1982-01-27 1983-08-03 Toshiba Ceramics Co Ltd Pulling apparatus for single crystalline silicon
JPS58172287A (en) * 1982-03-31 1983-10-11 Fujitsu Ltd Growth device for crystal
JPS58190891A (en) * 1982-04-30 1983-11-07 Fujitsu Ltd Method for growth of single crystal
JPS6126591A (en) * 1984-07-18 1986-02-05 Fujitsu Ltd Crystal growing method
JPS62241889A (en) * 1986-04-12 1987-10-22 Mitsubishi Metal Corp Apparatus for making single crystal
US6660096B2 (en) * 1998-01-07 2003-12-09 Tokyo Electron Limited Gas treatment apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130195A (en) * 1982-01-27 1983-08-03 Toshiba Ceramics Co Ltd Pulling apparatus for single crystalline silicon
JPH034517B2 (en) * 1982-01-27 1991-01-23 Toshiba Ceramics Co
JPS58172287A (en) * 1982-03-31 1983-10-11 Fujitsu Ltd Growth device for crystal
JPS58190891A (en) * 1982-04-30 1983-11-07 Fujitsu Ltd Method for growth of single crystal
JPS6126591A (en) * 1984-07-18 1986-02-05 Fujitsu Ltd Crystal growing method
JPH0362679B2 (en) * 1984-07-18 1991-09-26 Fujitsu Ltd
JPS62241889A (en) * 1986-04-12 1987-10-22 Mitsubishi Metal Corp Apparatus for making single crystal
US6660096B2 (en) * 1998-01-07 2003-12-09 Tokyo Electron Limited Gas treatment apparatus

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