JPS5669300A - Method of liquid-phase epitaxial growing - Google Patents

Method of liquid-phase epitaxial growing

Info

Publication number
JPS5669300A
JPS5669300A JP14065679A JP14065679A JPS5669300A JP S5669300 A JPS5669300 A JP S5669300A JP 14065679 A JP14065679 A JP 14065679A JP 14065679 A JP14065679 A JP 14065679A JP S5669300 A JPS5669300 A JP S5669300A
Authority
JP
Japan
Prior art keywords
base plate
solution
liquid
phase epitaxial
insb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14065679A
Other languages
Japanese (ja)
Inventor
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14065679A priority Critical patent/JPS5669300A/en
Publication of JPS5669300A publication Critical patent/JPS5669300A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: The liquid-phase epitaxial growing is effected under the rotation of the base plate to the solution to inhibit the compositional supercooling and grow good- quality and uniform crystal layers.
CONSTITUTION: An InSb base plate 3 is included in the carbon plate 1 for including the base plate and InSb and a solution containing unnecessary impurities are placed in In. Then, a prescribed temperature gradient is applied onto the base plate 3 to effect the epitaxial growth wherein the base plate 3 is held with chuck 5 and the shaft 6 is driven to revolve in the arrow direction so that the base plate 3 rotates in respect of the solution 4. In this process, the compositional supercooling of the solution is inhibited and further the temperature distribution is made uniform at the surface of the base plate 3, thus increasing the growing speed and giving the good-quality to grown crystal layers.
COPYRIGHT: (C)1981,JPO&Japio
JP14065679A 1979-10-31 1979-10-31 Method of liquid-phase epitaxial growing Pending JPS5669300A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14065679A JPS5669300A (en) 1979-10-31 1979-10-31 Method of liquid-phase epitaxial growing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14065679A JPS5669300A (en) 1979-10-31 1979-10-31 Method of liquid-phase epitaxial growing

Publications (1)

Publication Number Publication Date
JPS5669300A true JPS5669300A (en) 1981-06-10

Family

ID=15273708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14065679A Pending JPS5669300A (en) 1979-10-31 1979-10-31 Method of liquid-phase epitaxial growing

Country Status (1)

Country Link
JP (1) JPS5669300A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450517A (en) * 1987-08-21 1989-02-27 Stanley Electric Co Ltd Method and apparatus for liquid phase epitaxial growth of semiconductor crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450517A (en) * 1987-08-21 1989-02-27 Stanley Electric Co Ltd Method and apparatus for liquid phase epitaxial growth of semiconductor crystal

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