JPS5490085A - Single crystal pulling apparatus - Google Patents

Single crystal pulling apparatus

Info

Publication number
JPS5490085A
JPS5490085A JP15903477A JP15903477A JPS5490085A JP S5490085 A JPS5490085 A JP S5490085A JP 15903477 A JP15903477 A JP 15903477A JP 15903477 A JP15903477 A JP 15903477A JP S5490085 A JPS5490085 A JP S5490085A
Authority
JP
Japan
Prior art keywords
crystals
crucible
base
crystalization
shafts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15903477A
Other languages
Japanese (ja)
Inventor
Shoichi Inoue
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15903477A priority Critical patent/JPS5490085A/en
Publication of JPS5490085A publication Critical patent/JPS5490085A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To provide a single crystal pulling apparatus which enables simultaneous production of plural single crystals and efficient massproduction through simultaneos pulling of the crystals being turned from growth solutions respectively arranged in the crucible by types.
CONSTITUTION: A given base material for crystalization is placed into a crucible 13 in a reactor 11. After an exhaustion down to about 10-2 to 10-3 Torr as shown by 11b, inert gas such as Ar is introduced. Then, the material in the crucible 13 is heated 12 until it is turned to a crystalization solution and retained at a given temperature. Subsequently, with a travelling base 21 driven downward, respective retaining devices 18a to 18d are lowered together with the shafts 19a to 19d whereby seed crystals 17 for growth is emmersed into the solution 16. Simultaneously, with the rotation of a rotating shaft 24, the shafts 19a to 19d are rotated together through gears 25 and 26a to 26d so that the crystals 17 turn properly. Then, with the base 21 driven upward, the crystals are pulled at a given rate rotating the retaining devices 18a to 18d. In this manner, four single crystals can be made to grow on the respective seed crystals 17 simultaneously.
COPYRIGHT: (C)1979,JPO&Japio
JP15903477A 1977-12-28 1977-12-28 Single crystal pulling apparatus Pending JPS5490085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15903477A JPS5490085A (en) 1977-12-28 1977-12-28 Single crystal pulling apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15903477A JPS5490085A (en) 1977-12-28 1977-12-28 Single crystal pulling apparatus

Publications (1)

Publication Number Publication Date
JPS5490085A true JPS5490085A (en) 1979-07-17

Family

ID=15684798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15903477A Pending JPS5490085A (en) 1977-12-28 1977-12-28 Single crystal pulling apparatus

Country Status (1)

Country Link
JP (1) JPS5490085A (en)

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