JPS55104996A - Single crystal pulling device - Google Patents

Single crystal pulling device

Info

Publication number
JPS55104996A
JPS55104996A JP1035179A JP1035179A JPS55104996A JP S55104996 A JPS55104996 A JP S55104996A JP 1035179 A JP1035179 A JP 1035179A JP 1035179 A JP1035179 A JP 1035179A JP S55104996 A JPS55104996 A JP S55104996A
Authority
JP
Japan
Prior art keywords
single crystal
melt
magnets
pulling device
stand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1035179A
Other languages
Japanese (ja)
Inventor
Shoichi Inoue
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1035179A priority Critical patent/JPS55104996A/en
Publication of JPS55104996A publication Critical patent/JPS55104996A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To enable a uniform high-quality single crystal to be pulled by preventing vibration of a Czochralski method single crystal pulling device with mechanism provided with magnets.
CONSTITUTION: Reaction tube 1 is evacuated from exhaust port 2b, and inert gas is fed from discharge hole 2a to form an inert atmosphere in tube 1. A base material in crucible 6 is heated with high output heater 5 and converted into melt 9 for growing. Electric motor 19b is driven to lower moving stand 18 along sliding shaft 16, and simultaneously with dipping seed crystal 10 in melt 9 rotary shaft 12 is rotated by electric motor 19a. Next jacks 26a, 26b are adjusted with a horizontal standard to maintain stand 23 horizontal. By the repulsive power between stand 23 side magnets 25a, 25b and magnets 28a, 28b on the bottoms of cylinders 27a, 27b the single crystal pulling device is insulated from the outside, so melt 9 is not affected by external vibration to prevent the melt surface from rippling. Accordingly, by pulling holder 11 with rotation high-quality single crystal 24 is grown.
COPYRIGHT: (C)1980,JPO&Japio
JP1035179A 1979-02-02 1979-02-02 Single crystal pulling device Pending JPS55104996A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1035179A JPS55104996A (en) 1979-02-02 1979-02-02 Single crystal pulling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1035179A JPS55104996A (en) 1979-02-02 1979-02-02 Single crystal pulling device

Publications (1)

Publication Number Publication Date
JPS55104996A true JPS55104996A (en) 1980-08-11

Family

ID=11747759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1035179A Pending JPS55104996A (en) 1979-02-02 1979-02-02 Single crystal pulling device

Country Status (1)

Country Link
JP (1) JPS55104996A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1029955A1 (en) * 1997-08-19 2000-08-23 Shin-Etsu Handotai Co., Ltd Apparatus and method for producing single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1029955A1 (en) * 1997-08-19 2000-08-23 Shin-Etsu Handotai Co., Ltd Apparatus and method for producing single crystal
EP1029955A4 (en) * 1997-08-19 2003-07-16 Shinetsu Handotai Kk Apparatus and method for producing single crystal

Similar Documents

Publication Publication Date Title
US3998686A (en) Sapphire growth from the melt using porous alumina raw batch material
JPS6472984A (en) Apparatus for producing single crystal
US4650540A (en) Methods and apparatus for producing coherent or monolithic elements
WO2019109367A1 (en) Device and method for rotational and continuous crystal growth by vgf process after horizontal injection and synthesis
GB1068223A (en) Crystal growing method and apparatus
JPS55104996A (en) Single crystal pulling device
US3296036A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
JPS5547300A (en) Crystal pulling device
JPS5632397A (en) Silicon single crystal pulling apparatus
JPS5692192A (en) Method for growing semiconductor single crystal
GB1284017A (en) Apparatus for growing crystalline bodies
JPS54122682A (en) Single crystal growing device
JP2000281500A (en) Gallium arsenide single crystal, its production and apparatus for producing the same
CN214736205U (en) Novel continuous and rapid crystal growth device
CN216404591U (en) Silicon carbide crystal growth crucible device
JPS5490086A (en) Method of producing single crystal
JPS54124878A (en) Continuous lift type single crystal preparation and apparatus thereof
JPS55113695A (en) Single crystal growing device
FR2361150A1 (en) Crystal group pulling furnace - with puller rod drive mechanism outside crucible chamber and horizontal centre adjustment
CN206173478U (en) Graphite crucible with locating pin
JPS6445796A (en) Apparatus for pulling up si single crystal and method therefor
JPS5767018A (en) Formation of film
JPS54121283A (en) Manufacture of silicon single crystal by pulling method and apparatus therefor
JPS5673692A (en) Single crystal manufacturing apparatus
JPS55113694A (en) Single crystal growing device