JPS5673692A - Single crystal manufacturing apparatus - Google Patents

Single crystal manufacturing apparatus

Info

Publication number
JPS5673692A
JPS5673692A JP14837379A JP14837379A JPS5673692A JP S5673692 A JPS5673692 A JP S5673692A JP 14837379 A JP14837379 A JP 14837379A JP 14837379 A JP14837379 A JP 14837379A JP S5673692 A JPS5673692 A JP S5673692A
Authority
JP
Japan
Prior art keywords
crystal
single crystal
pulling
high pressure
seed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14837379A
Other languages
Japanese (ja)
Inventor
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14837379A priority Critical patent/JPS5673692A/en
Publication of JPS5673692A publication Critical patent/JPS5673692A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To enhance the production efficiency and yield of a single crystal of uniform diameter by arranging a molten crystal starting material holding crucible in a high pressure vessel, a seed crystal pulling mechanism, a grown single crystal weight comparison judger, a seed crystal pulling speed controller, etc.
CONSTITUTION: This apparatus is provided with pulling rod 7 which is freely rotated and moved back and forth with pulling mechanism 8 for growing a single crystal by pulling up seed crystal 9 wetted by crystal starting material 5 melted by heating with heater 4 in high pressure vessel 1 with an inert high pressure gas sealed, a judger composed of sensors 11, 12 which detect the weight of the grown single crystal and compare it to a set value, and control circuits 14, 15 controlling the seed crystal pulling speed and the heating temp. with heater 4, respectively in accordance with the judged results. By using this apparatus difficult crystal form control is easily performed, and a single crystal of uniform quality is efficiently obtd, in a high yield.
COPYRIGHT: (C)1981,JPO&Japio
JP14837379A 1979-11-16 1979-11-16 Single crystal manufacturing apparatus Pending JPS5673692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14837379A JPS5673692A (en) 1979-11-16 1979-11-16 Single crystal manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14837379A JPS5673692A (en) 1979-11-16 1979-11-16 Single crystal manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPS5673692A true JPS5673692A (en) 1981-06-18

Family

ID=15451302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14837379A Pending JPS5673692A (en) 1979-11-16 1979-11-16 Single crystal manufacturing apparatus

Country Status (1)

Country Link
JP (1) JPS5673692A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105177704A (en) * 2015-10-23 2015-12-23 苏州晶特晶体科技有限公司 High-stability crystal weighing unit for crystal growth furnaces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105177704A (en) * 2015-10-23 2015-12-23 苏州晶特晶体科技有限公司 High-stability crystal weighing unit for crystal growth furnaces

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