JPS5560092A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS5560092A
JPS5560092A JP13043278A JP13043278A JPS5560092A JP S5560092 A JPS5560092 A JP S5560092A JP 13043278 A JP13043278 A JP 13043278A JP 13043278 A JP13043278 A JP 13043278A JP S5560092 A JPS5560092 A JP S5560092A
Authority
JP
Japan
Prior art keywords
coil
crucible
single crystal
crystal
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13043278A
Other languages
Japanese (ja)
Inventor
Sadao Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13043278A priority Critical patent/JPS5560092A/en
Publication of JPS5560092A publication Critical patent/JPS5560092A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To easily produce a high quality, large size single crystal by relatively changing the position of a crucible and the heating zone of a heater so that a single crystal is grown while holding the power consumption of the heater almost constant, thereby minimizing changes in furnace temp. conditions due to a melt level lowering.
CONSTITUTION: Sintered raw material such as LiTaO3 is put into Pt-Rh crucible 1 and melted by high frequency heating with a heater such as work coil 10. At this time, coil 10 is previously set so that central position A of the heating actual length of coil 10 coincides with central position B of the depth of crucible 1. A single crystal is then pulled from the molten material at a fixed rate with a LiTaO3 seed crystal of X axis direction. When the pulled crystal reaches a predetermined diameter, the relative position between crucible 1 and coil 10 is changed to grow the crystal while keeping the diameter. By holding the power consumption of coil 10 almost constant, changes in furnace temp. conditions due to a melt level lowering are minimized.
COPYRIGHT: (C)1980,JPO&Japio
JP13043278A 1978-10-25 1978-10-25 Production of single crystal Pending JPS5560092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13043278A JPS5560092A (en) 1978-10-25 1978-10-25 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13043278A JPS5560092A (en) 1978-10-25 1978-10-25 Production of single crystal

Publications (1)

Publication Number Publication Date
JPS5560092A true JPS5560092A (en) 1980-05-06

Family

ID=15034090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13043278A Pending JPS5560092A (en) 1978-10-25 1978-10-25 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS5560092A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027684A (en) * 1983-07-26 1985-02-12 Fujitsu Ltd Apparatus for producing single crystal
JP2018177542A (en) * 2017-04-03 2018-11-15 信越化学工業株式会社 Production method of oxide single crystal, and oxide single crystal pulling-up device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027684A (en) * 1983-07-26 1985-02-12 Fujitsu Ltd Apparatus for producing single crystal
JP2018177542A (en) * 2017-04-03 2018-11-15 信越化学工業株式会社 Production method of oxide single crystal, and oxide single crystal pulling-up device

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