JPS6418987A - Single crystal growth unit - Google Patents
Single crystal growth unitInfo
- Publication number
- JPS6418987A JPS6418987A JP17536787A JP17536787A JPS6418987A JP S6418987 A JPS6418987 A JP S6418987A JP 17536787 A JP17536787 A JP 17536787A JP 17536787 A JP17536787 A JP 17536787A JP S6418987 A JPS6418987 A JP S6418987A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crucible
- single crystal
- wall
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain a semiconductor single crystal of high crystallinity at an increased growth rate, by forming holes or thin wall parts in the wall of the outer crucible enveloping the inner crucible containing the semiconductor melt. CONSTITUTION:The shaft 3 of the crucible 2 is allowed to rotate in the reverse direction to that of the shaft 4 of the crystal-lifting means 15. Seed crystal 8 is allowed to come into contact with the semiconductor Si melt 5 by allowing both shafts 3, 7 to move, then the seed crystal is pulled up to effect the growth of Si single crystal 10. At this time, a hole 12 or thin wall part is formed on the wall of the outer crucible 2A to feed the heat from the heater 4 to the melt 5 and the inert gas shown by arrow C on the melt more efficiently. As a result, the melt 5 near the wall of the crucible 2B is well to increase the growth rate of the Si single crystal 10 and inhibit the melt from solidifying near the wall of the crucible 2B, thereby favorable crystal growth proceeds. The temperature of the zone where the inert gas flows on the melt is increased to inhibit the SiO2 from forming grains and causing phase transition thereby a semiconductor single crystal of good crystallinity is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17536787A JPS6418987A (en) | 1987-07-14 | 1987-07-14 | Single crystal growth unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17536787A JPS6418987A (en) | 1987-07-14 | 1987-07-14 | Single crystal growth unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418987A true JPS6418987A (en) | 1989-01-23 |
Family
ID=15994850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17536787A Pending JPS6418987A (en) | 1987-07-14 | 1987-07-14 | Single crystal growth unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418987A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0412085A (en) * | 1990-04-27 | 1992-01-16 | Nkk Corp | Apparatus for producting silicon single crystal |
| JP2009522201A (en) * | 2006-01-04 | 2009-06-11 | アポロン、ソーラー | Apparatus and method for producing a block of crystalline material |
| JP2011121827A (en) * | 2009-12-11 | 2011-06-23 | Siltronic Japan Corp | Graphite crucible and apparatus for producing silicon single crystal |
-
1987
- 1987-07-14 JP JP17536787A patent/JPS6418987A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0412085A (en) * | 1990-04-27 | 1992-01-16 | Nkk Corp | Apparatus for producting silicon single crystal |
| JP2009522201A (en) * | 2006-01-04 | 2009-06-11 | アポロン、ソーラー | Apparatus and method for producing a block of crystalline material |
| JP2011121827A (en) * | 2009-12-11 | 2011-06-23 | Siltronic Japan Corp | Graphite crucible and apparatus for producing silicon single crystal |
| US8992682B2 (en) | 2009-12-11 | 2015-03-31 | Siltronic Ag | Graphite crucible and silicon single crystal manufacturing apparatus |
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