JPH0412085A - Apparatus for producting silicon single crystal - Google Patents
Apparatus for producting silicon single crystalInfo
- Publication number
- JPH0412085A JPH0412085A JP11452090A JP11452090A JPH0412085A JP H0412085 A JPH0412085 A JP H0412085A JP 11452090 A JP11452090 A JP 11452090A JP 11452090 A JP11452090 A JP 11452090A JP H0412085 A JPH0412085 A JP H0412085A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon
- raw material
- crucible
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 109
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- 239000013078 crystal Substances 0.000 title claims abstract description 65
- 238000005192 partition Methods 0.000 claims abstract description 33
- 239000002994 raw material Substances 0.000 claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 20
- 239000010439 graphite Substances 0.000 claims abstract description 20
- 230000008018 melting Effects 0.000 claims abstract description 18
- 238000002844 melting Methods 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010453 quartz Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 abstract description 15
- 230000008023 solidification Effects 0.000 abstract description 15
- 239000007788 liquid Substances 0.000 abstract description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 26
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、チョクラルスキー法による大直径シリコン単
結晶の製造装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an apparatus for producing large diameter silicon single crystals using the Czochralski method.
［従来の技術］
ＬＳＩ分野ではシリコン単結晶に要求される直径は年々
大きくなっている。今日、最新鋭デバイスでは直径６イ
ンチのシリコン単結晶が使われている。将来直径１０イ
ンチあるいはそれ以上の直径のシリコン単結晶、例えば
直径１２インチのシリコン単結晶が必要になるといわれ
ている。[Prior Art] In the LSI field, the diameter required for silicon single crystals is increasing year by year. Today, cutting-edge devices use silicon single crystals that are 6 inches in diameter. It is said that silicon single crystals with a diameter of 10 inches or more, for example, silicon single crystals with a diameter of 12 inches, will be needed in the future.
チョクラルスキー法（ＣＺ法）によるシリコン単結晶の
製造方法には２通りの方法がある。るつぼを回転させる
方法と回転させない方法である。There are two methods for manufacturing silicon single crystals using the Czochralski method (CZ method). There are two methods: rotating the crucible and not rotating it.
今日ではＬＳＩ用に用いられる全てのシリコン単結晶は
、るつぼの回転とシリコン単結晶の回転とを互いに逆方
向に回転させ、かつ、るつぼの側面を取り囲む電気抵抗
加熱体によりるつぼを加熱することにより製造されてい
る。多くの試みにも関わらず、るつぼを回転させない方
法、あるいは上記以外の加熱方法（電気抵抗加熱体）で
直径５インチ以上のシリコン単結晶が今までに作られた
ことはないし、今後とも作られることはない。この理由
は、るつぼの回転なしでは、あるいは電磁誘導加熱やる
つぼの底面からの電気抵抗加熱等の上記以外の加熱方法
では、シリコン単結晶の成長するに対して同心円状の温
度分布完全が得られないからである。シリコン単結晶の
成長は温度に関してきわめて敏感なのである。Today, all silicon single crystals used for LSI are produced by rotating the crucible and the silicon single crystal in opposite directions, and by heating the crucible with an electric resistance heating element surrounding the sides of the crucible. Manufactured. Despite many attempts, silicon single crystals with a diameter of more than 5 inches have never been made, and will never be made, by a method that does not rotate the crucible or by a heating method other than the above (electrical resistance heating). Never. The reason for this is that without rotation of the crucible, or with heating methods other than those mentioned above, such as electromagnetic induction heating or electrical resistance heating from the bottom of the crucible, a complete concentric temperature distribution cannot be obtained for the growing silicon single crystal. That's because there isn't. The growth of silicon single crystals is extremely sensitive to temperature.
るつぼが回転するＣＺ法（以下通常のＣＺ法という）で
は、るつぼ回転と電気抵抗側面加熱によりシリコン溶融
液に強い対流が発生し、シリコン溶融液が良く攪拌され
る。この結果直径５インチ以上の大直径シリコン単結晶
の育成は望ましい。In the CZ method in which the crucible rotates (hereinafter referred to as the normal CZ method), strong convection is generated in the silicon melt due to the crucible rotation and electric resistance side heating, and the silicon melt is well stirred. As a result, it is desirable to grow large diameter silicon single crystals with a diameter of 5 inches or more.
即ち均一なそしてシリコン単結晶に対して完全に同心円
状の溶融液表面温度分布が得られる。That is, a uniform and completely concentric melt surface temperature distribution with respect to the silicon single crystal is obtained.
上記のように、通常のＣＺ法と他のＣ７法ではシリコン
溶融液の流れに大きな違いがある。この違いは結果とし
てシリコン単結晶の成長条件の大きな違いとなる。又、
炉内部品（例えばホットゾーン、るつぼ、仕切り部材等
）の作用も両者では大きく異なる。シリコン単結晶育成
に対する考え方が両者では全く異なるのである。As mentioned above, there is a big difference in the flow of silicon melt between the normal CZ method and other C7 methods. This difference results in a major difference in the growth conditions for silicon single crystals. or,
The functions of the furnace parts (for example, hot zone, crucible, partition members, etc.) are also significantly different between the two. The two approaches to silicon single crystal growth are completely different.
通常のＣ２法ではシリコン単結晶の成長とともにるつぼ
内のシリコン溶融液が減少する。そしてシリコン単結晶
の成長とともにシリコン単結晶中のドーパント濃度が上
昇し、酸素濃度が低下する。即ちシリコン単結晶の性質
がその成長方向に変動する。ＬＳＩの高密度化にともな
いシリコン単結晶に要求される品質が年々きびしくなっ
て°きている。In the normal C2 method, the amount of silicon melt in the crucible decreases as the silicon single crystal grows. As the silicon single crystal grows, the dopant concentration in the silicon single crystal increases and the oxygen concentration decreases. That is, the properties of the silicon single crystal vary in the direction of its growth. As the density of LSI increases, the quality required of silicon single crystals becomes stricter year by year.
この問題を解決する手段として、通常のＣ２法の石英る
つぼ内のシリコン溶融液を小孔を有する円筒状の石英製
仕切り部材で仕切り、この仕切り部材の外側に原料シリ
コンを供給しながら、仕切り部材の内側で円柱状のシリ
コン単結晶を育成する方法が知られている（例えば、特
許公報 昭４０−１０１８４ ＰＩ Ｌ２０−Ｌ３５
） 。As a means to solve this problem, the silicon melt in the quartz crucible of the ordinary C2 method is partitioned by a cylindrical quartz partition member having small holes, and while raw silicon is supplied to the outside of this partition member, A method of growing a cylindrical silicon single crystal inside the is known (for example, Patent Publication No. 40-10184 PI L20-L35).
).
この方法の大きな問題点は特開昭６２−２４１８８９号
公報（Ｐ２ Ｌ１２−Ｌ１６）にも指摘されている通り
、仕切り部材の内側で仕切り部材を起点としてシリコン
溶融液の凝固が発生しやすい、この原因は次の通りであ
る１石英製である仕切り部材は光ファイバーに使われて
いることからも明らかなように、輻射により熱をよく伝
達する。即ちシリコン溶融液中の熱は光として仕切り部
材中を上方に伝達し、仕切り部材のシリコン溶融液面上
に露出している部分より放散される。従って仕切り部材
近傍ではシリコン溶融液温度が大きく低下している６更
に、通常のＣＺ法では、シリコン溶融液の強い攪拌によ
りシリコン溶融液の表面温度は均一でしかも凝固温度の
直上である。この二つのことが重なり仕切り部材に接触
しているシリコン溶融液表面は非常に凝固しやすい状態
になっている。特開昭６２−２４１８８９号公報はこの
問題を避けるため、仕切り部材を使用しない方法を提案
したものである。しかしこの方法はＮＦｌ溶解部が狭い
なめ、原料溶解能力が極めて小さく、シリコン単結晶の
弓き」二げ量に見合う量の原料シリコンを供給すること
ができない。A major problem with this method is that, as pointed out in JP-A No. 62-241889 (P2 L12-L16), the molten silicon tends to solidify inside the partition member starting from the partition member. The causes are as follows: 1. As is clear from the fact that quartz partition members are used in optical fibers, heat is transferred well through radiation. That is, the heat in the silicon melt is transmitted upward through the partition member as light, and is radiated from the portion of the partition member exposed above the surface of the silicon melt. Therefore, the temperature of the silicon melt is greatly reduced in the vicinity of the partition member6.Furthermore, in the normal CZ method, the surface temperature of the silicon melt is uniform due to strong stirring of the silicon melt, and is just above the solidification temperature. As a result of these two factors, the surface of the silicon melt that is in contact with the partition member is in a state where it is very easy to solidify. In order to avoid this problem, Japanese Patent Laid-Open No. 62-241889 proposes a method that does not use partition members. However, in this method, the NFl melting zone is narrow, so the raw material melting capacity is extremely small, and it is not possible to supply raw material silicon in an amount corresponding to the bowing amount of the silicon single crystal.
シリコン単結晶の引き上げ量に見合う量の原料シリコン
を供給可能にするため、仕切り部材を用い、かつそれか
らの凝固の発生を防止する方法を提案したものとして特
開平１−１５３５８９号公報がある。この特許は仕切り
部材を熱遮蔽部材で完全に覆うことを提案している。こ
の方法により仕切り部材からの熱の放散は防止できる。Japanese Patent Laid-Open No. 1-153589 proposes a method that uses a partition member and prevents solidification in order to supply raw silicon in an amount commensurate with the amount of silicon single crystal pulled. This patent proposes to completely cover the partition member with a heat shielding member. This method can prevent heat from dissipating from the partition member.
従ってシリコン単結晶の引き上げ量に見合う量の原料シ
リコンを供給し、なおかつ凝固の発生を防止している。Therefore, raw material silicon is supplied in an amount commensurate with the amount of silicon single crystal pulled, and at the same time, solidification is prevented.
［発明が解決しようとする課Ｍ］
特開平１−１５３５８９号公報の方法によれば、シリコ
ン単結晶の引き上げ量に見合う量の原料シリコンを供給
し、なおかつ凝固の発生を防止できる。しかし生産性の
向上のため結晶引き上げ速度を速くすると、それにとも
なって原料シリコン供給量も多くしなければならない、
原料シリコン供給量を大きくすればするほど原料溶解部
の温度は下がるので、シリコン単結晶の引き上げ量に見
合う量の原料を供給しながらシリコン単結、晶を育成す
る方法では、引き上げ速度に自ずから上限がある。この
引き上げ速度の上限値はシリコン単結晶装置の構成によ
り異なるが、発明者らが検討したところ、特開平１．−
１５３！５８９の方法では直径６インチの結晶で引き上
げ速度を１ｍｍ／ｓｉｎ以上にすると原料溶解部の温度
低下により仕切り部材の外側がら凝固が発生することが
わかった。従って特開平１−１５３５８９の方法では、
結晶引き上げ速度を１１ａ／ｓｉｎ以上に保持するため
にはなんらかの手段が効じなければならない。[Problem M to be Solved by the Invention] According to the method disclosed in Japanese Unexamined Patent Application Publication No. 1-153589, raw material silicon can be supplied in an amount commensurate with the amount of silicon single crystal pulled, and at the same time, solidification can be prevented. However, if the crystal pulling speed is increased to improve productivity, the amount of raw silicon supplied must also be increased.
The larger the amount of raw material silicon supplied, the lower the temperature of the raw material melting zone, so in the method of growing silicon single crystals and crystals while supplying the amount of raw material commensurate with the amount of silicon single crystal pulled, the pulling rate naturally has an upper limit. There is. The upper limit of this pulling rate differs depending on the configuration of the silicon single crystal device, but the inventors have investigated it and found that it is as described in Japanese Unexamined Patent Application Publication No. 1999. −
In the method of No. 153!589, it was found that when the pulling speed was set to 1 mm/sin or more for a crystal with a diameter of 6 inches, solidification occurred from the outside of the partition member due to the temperature drop in the raw material melting zone. Therefore, in the method of JP-A-1-153589,
Some means must be effective in order to maintain the crystal pulling rate at 11a/sin or higher.
この発明は係る事情に鑑みてなされたものであり、連続
的にシリコン単結晶の引き上げ量に見合う量の原料シリ
コンを供給するシリコン単結晶製造装置において、従来
の装置に比べ、仕切り部材からの凝固発生を防止し、結
晶引き上げ速度の上限値を向上させることを目的とする
。This invention has been made in view of the above circumstances, and in a silicon single crystal production apparatus that continuously supplies raw silicon in an amount corresponding to the amount of silicon single crystal pulled, it is possible to reduce the amount of solidification from the partition member compared to conventional equipment. The purpose is to prevent this occurrence and improve the upper limit of the crystal pulling rate.
［課題を解決するための手段］
本発明に係るシリコン単結晶製造装置は、シリコン溶融
液を内蔵する自転型石英るつぼと、前記石英るつぼを支
持する黒鉛製るつぼと、前記黒鉛製るつぼを側面から加
熱する電気抵抗加熱体と、前記石英るつぼ内でシリコン
溶融液を単結晶育成部と原料溶解部とに分割しかつシリ
コン溶融液が流通できる小孔を有する石英製るつぼ部材
と、前記仕切り部材と前記原料溶解部を覆う保温カバー
と、前記原料溶解部に原料シリコンを連続的に供給する
原料供給装置と、を有するシリコン単結晶製造装置にお
いて、前記黒鉛製るつぼの円筒部分のシリコン溶融液面
上方５０■■に相当する位置より、シリコン溶融液面下
方２０ｍｍに相当する位置までの範囲に、複数個以上の
開口部を設けることを特徴とする。[Means for Solving the Problems] A silicon single crystal manufacturing apparatus according to the present invention includes a rotating quartz crucible containing a silicon melt, a graphite crucible that supports the quartz crucible, and a graphite crucible that can be opened from the side. an electric resistance heating element for heating; a quartz crucible member that divides the silicon melt into a single crystal growth section and a raw material melting section in the quartz crucible and has a small hole through which the silicon melt can flow; and the partition member; In the silicon single crystal manufacturing apparatus, which includes a heat insulating cover that covers the raw material melting section and a raw material supply device that continuously supplies raw silicon to the raw material melting section, above the surface of the silicon melt in the cylindrical portion of the graphite crucible. It is characterized in that a plurality or more openings are provided in a range from a position corresponding to 50 mm to a position corresponding to 20 mm below the surface of the silicon melt.
［作用］
原料シリコンの供給量を多くした時、仕切り部材の外側
、即ち原料溶解部で凝固発生が起こるのは、シリコン溶
融液のるつぼ半径方向の温度勾配が小さくなっているた
めである。これはシリコン溶融液の側方より火熱した熱
エネルギーが、供給された原料シリコンに奪われ、原料
溶解部の温度が下がることによる。[Operation] When the supply amount of raw material silicon is increased, solidification occurs outside the partition member, that is, in the raw material melting part, because the temperature gradient of the silicon melt in the radial direction of the crucible is reduced. This is because the heat energy heated from the sides of the silicon melt is absorbed by the supplied raw material silicon, and the temperature of the raw material melting part decreases.
シリコン単結晶の引き上げ速度は、シリコン溶＠液内の
側部方向と下部力・向から結晶凝固界面に到達する総熱
量がどれだけあるかにより決まる。The pulling speed of a silicon single crystal is determined by the total amount of heat that reaches the crystal solidification interface from the side and lower forces in the silicon solution.
従って、同じ引き上げ速度の場合、シリコン溶融液内の
側部方向からの入熱の比率を大きくした方が、即ち、る
つぼ半径方向の温度勾配が大きくなるようにした方が、
仕切り部材からの凝固は起こりにくい０本発明に係るシ
リコン単結晶の製造装置では、シリコン溶融液面付近に
相当する部分の黒鉛るつぼに、複数個以上の開口部を設
けているので、シリコン溶融液に対して電気抵抗加熱体
がらの直接入熱がおこなわれ、側部入熱の比率が大きく
なる。このため従来の装置に比べて、仕切り部材からの
凝固が起こりに＜＜、結晶引き上げ速度を速くすること
ができる。Therefore, for the same pulling speed, it is better to increase the ratio of heat input from the side in the silicon melt, that is, to increase the temperature gradient in the radial direction of the crucible.
Solidification from the partition member is unlikely to occur.In the silicon single crystal production apparatus according to the present invention, a plurality of openings are provided in the graphite crucible in the vicinity of the silicon melt surface, so that the silicon melt Direct heat input from the electric resistance heating element is performed against the heat source, and the ratio of side heat input increases. Therefore, compared to conventional devices, solidification from the partition member does not occur and the crystal pulling speed can be increased.
黒船るつぼに開口部がない場合よりも、原料溶解部に対
する火熱効率を上げることのできる開口部の上下方向の
範囲を調べるため、高さ方向の幅ｌＯ龍の狭い幅の開口
部をシリコン溶融液面に対して様々な位置に配置し、シ
リコン単結晶の育成実験を行った。第３図がら明らがな
ように、仕切り部材からの凝固を防止しつつ引き上げる
ことのできる最大引き上げ速度は、シリコン溶融１液面
下方２０ＩＩ１１より下では開口がない場合よりも小さ
くなる。これは開口部がシリコン溶融液面に対して下方
位置になるに従って、シリコン溶融液に対する電気抵抗
加熱体からの入熱が側方入熱傾向がら下方入熱傾向とな
るためである。即ち、るつぼ半径方向の温度勾配が小さ
くなり、仕切り部材からの凝固が起こりやすくなる。ま
た開口による最大引き上げ速度の向上に対する寄与は
シリコン溶融液面に相当する付近の開口部で最も大きく
、シリコン溶融液面上方５０＋ｕ＋より上ではあまり効
果のないことがわかった。In order to investigate the vertical range of the opening that can increase the thermal efficiency for the raw material melting zone compared to the case where there is no opening in the Kurofune crucible, a narrow opening with a width of 1 in the height direction was used for melting silicon melt. We conducted experiments on growing silicon single crystals by placing them at various positions relative to the surface. As is clear from FIG. 3, the maximum pulling speed that can be pulled up while preventing solidification from the partition member is smaller below the molten silicon 1 liquid level 20II11 than in the case where there is no opening. This is because the heat input from the electrical resistance heating element to the silicon melt changes from a lateral heat input tendency to a downward heat input tendency as the opening becomes lower with respect to the silicon melt surface. That is, the temperature gradient in the radial direction of the crucible becomes smaller, making it easier for solidification to occur from the partition member. Also, the contribution of the opening to the improvement of the maximum pulling speed is
It was found that the effect is greatest at the opening near the silicon melt level, and is not very effective above 50+u+ above the silicon melt level.
［実施例］ 本発明の実施例を図面を参照して説明する。[Example] Embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の実施例の直径６インチのシリコン単結
晶の製造装置を示す縦断面図で、第２図は本発明の実施
例の黒鉛製るつぼの複数個以上の開口部を示す斜視図で
、（ａ）は本発明の一実施例を示す図で、（ｂ）は本発
明の他の一実施例でのる、１は直径２０インチの石英る
つぼで、黒鉛るつぼ２の中にセットされている。黒鉛る
つぼ２の円筒部に複数の開口部２２がある。この開口部
２２はシリコン溶融液面より上方４０龍以下、シリコン
溶融液面より下方５龍以上の範囲に相当する大きさであ
る。即ち直径４５＋ａｍΦの開口部で、個数は２０であ
る。この開口部２２によりシリコン溶融液７に対して電
気抵抗加熱体からの直接入熱が行なわれ、るつぼ側方の
入熱が大きくなる。FIG. 1 is a longitudinal cross-sectional view showing an apparatus for manufacturing a silicon single crystal with a diameter of 6 inches according to an embodiment of the present invention, and FIG. 2 is a perspective view showing a plurality of openings in a graphite crucible according to an embodiment of the present invention. In the figures, (a) is a diagram showing one embodiment of the present invention, and (b) is a diagram showing another embodiment of the present invention. 1 is a quartz crucible with a diameter of 20 inches, and a graphite crucible 2 is placed inside. It is set. There are a plurality of openings 22 in the cylindrical portion of the graphite crucible 2 . The opening 22 has a size corresponding to an area of 40 degrees or less above the silicon melt level and 5 degrees or more below the silicon melt level. That is, there are 20 openings with a diameter of 45+amΦ. This opening 22 allows direct heat input from the electric resistance heating element to the silicon melt 7, increasing the heat input to the sides of the crucible.
黒鉛るつぼ２はベデイスタル４で支えられている。ベデ
ィスタル４は炉外で電動モーターに結合されており、黒
鉛るつぼ２に回転運動（１０ｒｐ■）を与える働きをす
る。７はるつぼ１内に入れられたシリコン溶融液である
。これから柱状のシリコン単結晶５が回転（２０ｒｐ朧
）しながら１．２ａｍ／ｇｉｎの速度で引き上げられる
。３は黒鉛るつぼを取り囲む電気抵抗加熱体である。The graphite crucible 2 is supported by a Bedestar 4. The bedstone 4 is connected to an electric motor outside the furnace, and serves to provide rotational motion (10 rpm) to the graphite crucible 2. 7 is a silicon melt placed in the crucible 1. Thereafter, the columnar silicon single crystal 5 is pulled up at a speed of 1.2 am/gin while rotating (20 rpm). 3 is an electric resistance heating element surrounding the graphite crucible.
雰囲気ガスは引き上げチャンバー内２０から炉内に導入
され最終的に炉底の排出口１つから減圧装置（図示せず
）により排出される。Atmospheric gas is introduced into the furnace from inside the pulling chamber 20 and finally exhausted from one exhaust port at the bottom of the furnace by a pressure reducing device (not shown).
炉内（チャンバー上１１６．およびチャンバー胴１７内
）の圧力は０．０１−０．０３気圧である０以上は通常
のＣ２法によるシリコン単結晶の製造装置と同じである
。The pressure inside the furnace (upper chamber 116 and inside the chamber body 17) is 0.01 to 0.03 atm, which is the same as in a silicon single crystal manufacturing apparatus using the ordinary C2 method.
８はるつぼ１内にこれと同心円に配置された高純度気泡
入り石英ガラスからなる仕切り部材である。その直径は
３５Ｃ１１である。この仕切り部材８には小孔１０が開
けられており、原料溶解部のシリコン溶融液はこの小孔
１０を通って単結晶育成部に流入する。この仕切り部材
の下縁部はるつぼ１とあらかじめ融着されているか、又
は、原料シリコンを溶解する際の熱により融着している
。Reference numeral 8 denotes a partition member made of high-purity bubble-filled quartz glass that is arranged concentrically within the crucible 1. Its diameter is 35C11. A small hole 10 is formed in this partition member 8, and the silicon melt in the raw material melting section flows into the single crystal growth section through this small hole 10. The lower edge of this partition member is either fused to the crucible 1 in advance, or fused by the heat generated when the raw silicon is melted.
１４は原料供給袋！で、原料溶解部の上部に開口を持っ
ており１粒状の原料シリコンはこの供給装置を通って原
料溶解部に供給される。供給割合は、シリコン結晶化量
と等しい量、即ち約５２ｇ／ｓｉｎである。この原料供
給装置１４はチャンバー上蓋１６の外部に設けた原料供
給チャンバー（図示せず）に連結されており、原料シリ
コンを連続的に供給する。14 is the raw material supply bag! There is an opening at the top of the raw material melting section, and a grain of raw silicon is supplied to the raw material melting section through this supply device. The supply rate is equal to the amount of silicon crystallized, ie, about 52 g/sin. This raw material supply device 14 is connected to a raw material supply chamber (not shown) provided outside the chamber upper lid 16, and continuously supplies raw material silicon.
１５は保温カバーであり、板厚０．２ｍｍのタンタル板
で構成されている。これは仕切り部材８および原料溶解
部からの熱の放散を抑制する。Reference numeral 15 denotes a heat insulation cover, which is made of a tantalum plate with a thickness of 0.2 mm. This suppresses heat dissipation from the partition member 8 and the raw material melting section.
上記のように構成した本発明の一実施例であるシリコン
単結晶の製造装置において、シリコン単結晶の育成実験
を行なったところ、直径６インチのシリコン単結晶に関
し、黒鉛るつぼに開口部がない場合、仕切り部材からの
凝固のため引き上げ速度を１■■／■ｉｎ以上にできな
かったのに対して、黒鉛るつぼに開口部がある場合は仕
切り部材からの凝固を防止しでき、シリコン単結晶の引
き上げ速度を１．１〜１．３ｍｍ／朧ｉｎにすることが
できた。When a silicon single crystal growth experiment was conducted using the silicon single crystal production apparatus which is an embodiment of the present invention configured as described above, it was found that a silicon single crystal with a diameter of 6 inches had no opening in the graphite crucible. However, if the graphite crucible has an opening, solidification from the partition member can be prevented, and the pulling speed cannot be increased above 1 ■■/■in due to solidification from the partition member. The pulling speed could be set to 1.1 to 1.3 mm/in.
また、第２図（ｂ）本発明における別の実施例である。Further, FIG. 2(b) shows another embodiment of the present invention.
この開口部２２はシリコン溶融液面より上方４．０ ａ
ｍ 、シリコン溶融液面より下方５ ｍｍの範囲に相当
する大きさである。即ち、矩形４５×２００關の開口部
で、個数は６である。この実施例においても、第２図（
ａ）の場合と同様の効果が得られた。This opening 22 is located 4.0 a above the silicon melt surface.
m, which corresponds to a range of 5 mm below the silicon melt surface. That is, the number of openings is 6, with a rectangular size of 45×200 dimensions. In this example as well, FIG.
The same effect as in case a) was obtained.
「発明の効果］
本発明は以上のように構成したので、シリコン単結晶の
引き上げ量に見合う量の原料シリコンを連続的にを供給
し、なおかつ凝固の発生を防止し、直径６インチのシリ
コン単結晶を引き上げ速度１．１＋ｎ／■１ｎ以上の高
速引き上げができるようになった。本発明は生産性の向
上、シリコン単結晶の育成条件の広範囲化による結晶品
質特性の多様化など効果大である。[Effects of the Invention] Since the present invention is constructed as described above, it is possible to continuously supply raw material silicon in an amount commensurate with the amount of silicon single crystal pulled, to prevent the occurrence of coagulation, and to obtain a silicon single crystal with a diameter of 6 inches. It is now possible to pull a crystal at a high speed of 1.1+n/■1n or more.The present invention has great effects such as improving productivity and diversifying crystal quality characteristics by widening the range of growth conditions for silicon single crystals. .
第１図は本発明のシリコン単結晶の製造装置を示す断面
図、第２図は本発明の黒鉛るつぼの斜視図で、（ａ）は
一実施例の斜視図、（ｂ）は別の実施例の斜視図、第３
図は本発明の実験例で、シリコン溶融液面からの上方位
置とシリコン単結晶の引き上げ速度を示すグラフ図であ
る。
１・・・石英るつぼ、２・・・黒鉛るつぼ、３・・・電
気抵抗加熱体、４・・・ベディスタル、５・・・シリコ
ン単結晶、７・・・シリコン溶融液、８・・・仕切り部
材、１０・・・小孔、１４・・・シリコン供給袋！、１
５・・・保温カバー、１６・・・チャンバー上蓋、１７
・・チャンバー胴、１９・・・排出口、２０・・引き上
げチャンバー内、２２・・・黒鉛るつぼの開口部。FIG. 1 is a cross-sectional view showing a silicon single crystal manufacturing apparatus of the present invention, and FIG. 2 is a perspective view of a graphite crucible of the present invention, where (a) is a perspective view of one embodiment, and (b) is a perspective view of another embodiment. Example perspective view, 3rd
The figure is an experimental example of the present invention, and is a graph showing the position above the silicon melt surface and the pulling rate of the silicon single crystal. DESCRIPTION OF SYMBOLS 1... Quartz crucible, 2... Graphite crucible, 3... Electric resistance heating element, 4... Vedistal, 5... Silicon single crystal, 7... Silicon melt, 8... Partition Components, 10...Small hole, 14...Silicon supply bag! ,1
5...Heat insulation cover, 16...Chamber top lid, 17
...Chamber body, 19...Discharge port, 20...Inside of pulling chamber, 22...Opening of graphite crucible.
Claims (1)
石英るつぼを支持する黒鉛製るつぼと、前記黒鉛製るつ
ぼを側面から加熱する電気抵抗加熱体と、前記石英るつ
ぼ内でシリコン溶融液を単結晶育成部と原料溶解部とに
分割しかつシリコン溶融液が流通できる小孔を有する石
英製るつぼ部材と、前記仕切り部材と前記原料溶解部を
覆う保温カバーと、前記原料溶解部に原料シリコンを連
続的に供給する原料供給装置とを有するシリコン単結晶
製造装置において、前記黒鉛製るつぼの円筒部分のシリ
コン溶融液面上方５０ｍｍに相当する位置より、シリコ
ン溶融液面下方２０ｍｍに相当する位置までの範囲に、
複数個以上の開口部を設けることを特徴とするシリコン
単結晶の製造装置。A rotating quartz crucible containing a silicon melt, a graphite crucible supporting the quartz crucible, an electric resistance heating element heating the graphite crucible from the side, and growing a single crystal of the silicon melt in the quartz crucible. a quartz crucible member that is divided into a part and a raw material melting part and has a small hole through which silicon melt can flow; a heat insulation cover that covers the partition member and the raw material melting part; In a silicon single crystal manufacturing apparatus having a raw material supply device for supplying raw materials to ,
A silicon single crystal manufacturing device characterized by providing a plurality or more openings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114520A JP2633057B2 (en) | 1990-04-27 | 1990-04-27 | Silicon single crystal manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114520A JP2633057B2 (en) | 1990-04-27 | 1990-04-27 | Silicon single crystal manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0412085A true JPH0412085A (en) | 1992-01-16 |
| JP2633057B2 JP2633057B2 (en) | 1997-07-23 |
Family
ID=14639808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2114520A Expired - Fee Related JP2633057B2 (en) | 1990-04-27 | 1990-04-27 | Silicon single crystal manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2633057B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591945A (en) * | 2016-11-30 | 2017-04-26 | 安徽电气集团股份有限公司 | Polycrystalline silicon re-feeding method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102277615A (en) * | 2011-09-05 | 2011-12-14 | 镇江大成新能源有限公司 | Crucible capable of making melt concentration uniform |
| KR101389162B1 (en) * | 2012-08-20 | 2014-04-25 | 주식회사 엘지실트론 | Single crystal grower and apparatus and method for supplying raw material to it |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59116194A (en) * | 1982-12-23 | 1984-07-04 | Agency Of Ind Science & Technol | Manufacture of compound semiconductor single crystal |
| JPS6418987A (en) * | 1987-07-14 | 1989-01-23 | Sony Corp | Single crystal growth unit |
| JPH01153589A (en) * | 1987-12-08 | 1989-06-15 | Nkk Corp | Pulling of single crystal and apparatus therefor |
| JPH01106575U (en) * | 1988-01-12 | 1989-07-18 |
-
1990
- 1990-04-27 JP JP2114520A patent/JP2633057B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59116194A (en) * | 1982-12-23 | 1984-07-04 | Agency Of Ind Science & Technol | Manufacture of compound semiconductor single crystal |
| JPS6418987A (en) * | 1987-07-14 | 1989-01-23 | Sony Corp | Single crystal growth unit |
| JPH01153589A (en) * | 1987-12-08 | 1989-06-15 | Nkk Corp | Pulling of single crystal and apparatus therefor |
| JPH01106575U (en) * | 1988-01-12 | 1989-07-18 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591945A (en) * | 2016-11-30 | 2017-04-26 | 安徽电气集团股份有限公司 | Polycrystalline silicon re-feeding method |
| CN106591945B (en) * | 2016-11-30 | 2019-03-19 | 安徽电气集团股份有限公司 | A kind of polysilicon throws method again |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2633057B2 (en) | 1997-07-23 |
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