JPS54125190A - Crystal growing mehtod - Google Patents
Crystal growing mehtodInfo
- Publication number
- JPS54125190A JPS54125190A JP3365478A JP3365478A JPS54125190A JP S54125190 A JPS54125190 A JP S54125190A JP 3365478 A JP3365478 A JP 3365478A JP 3365478 A JP3365478 A JP 3365478A JP S54125190 A JPS54125190 A JP S54125190A
- Authority
- JP
- Japan
- Prior art keywords
- rod
- oxygen
- single crystal
- crystal
- dropped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To grow a single crystal of high purity contg. oxygen in a range causing no deposition by melting crystal growing raw material without using a crucible and contacting an oxygen-contg. substance to the molten part alone of the material to prevent propagation of dislocation.
CONSTITUTION: Si polycrystal rod 5 is joined to seed crystal 4 attached to support rod 3 capable of moving vertically and rotatably in container 2, and the joined part is melted with high frequency heating coil 6. While being rotated and dropped in the directions of arrows 7, 8 together with rod 3, rod 5 is successively melted with coil 6 to form melt zone 9, and Si single crystal 10 is grown as rod 5 is dropped. At this time, quartz rod 14 of high purity is put into through holes 11, 13 made in the central parts of rod 5 and support rod 12 so that lower end 14a of rod 14 is dipped in zone 9. The diameter of rod 14, the dropping rate of rod 5, etc. are suitably decided, and a predetermined vol. of oxygen is injected into growing single crystal 10 from rod 14.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3365478A JPS54125190A (en) | 1978-03-24 | 1978-03-24 | Crystal growing mehtod |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3365478A JPS54125190A (en) | 1978-03-24 | 1978-03-24 | Crystal growing mehtod |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54125190A true JPS54125190A (en) | 1979-09-28 |
Family
ID=12392427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3365478A Pending JPS54125190A (en) | 1978-03-24 | 1978-03-24 | Crystal growing mehtod |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54125190A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59102891A (en) * | 1982-11-30 | 1984-06-14 | Shin Etsu Handotai Co Ltd | Preparation of silicon single crystal |
JPH03177388A (en) * | 1989-11-24 | 1991-08-01 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | Method and device for manufacture of silicate ingot of high oxygen content by zone tensile process devoid of crucible |
-
1978
- 1978-03-24 JP JP3365478A patent/JPS54125190A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59102891A (en) * | 1982-11-30 | 1984-06-14 | Shin Etsu Handotai Co Ltd | Preparation of silicon single crystal |
JPH03177388A (en) * | 1989-11-24 | 1991-08-01 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | Method and device for manufacture of silicate ingot of high oxygen content by zone tensile process devoid of crucible |
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