JPS54125190A - Crystal growing mehtod - Google Patents

Crystal growing mehtod

Info

Publication number
JPS54125190A
JPS54125190A JP3365478A JP3365478A JPS54125190A JP S54125190 A JPS54125190 A JP S54125190A JP 3365478 A JP3365478 A JP 3365478A JP 3365478 A JP3365478 A JP 3365478A JP S54125190 A JPS54125190 A JP S54125190A
Authority
JP
Japan
Prior art keywords
rod
oxygen
single crystal
crystal
dropped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3365478A
Other languages
Japanese (ja)
Inventor
Seiji Kawato
Takanori Hayafuji
Junichi Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3365478A priority Critical patent/JPS54125190A/en
Publication of JPS54125190A publication Critical patent/JPS54125190A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow a single crystal of high purity contg. oxygen in a range causing no deposition by melting crystal growing raw material without using a crucible and contacting an oxygen-contg. substance to the molten part alone of the material to prevent propagation of dislocation.
CONSTITUTION: Si polycrystal rod 5 is joined to seed crystal 4 attached to support rod 3 capable of moving vertically and rotatably in container 2, and the joined part is melted with high frequency heating coil 6. While being rotated and dropped in the directions of arrows 7, 8 together with rod 3, rod 5 is successively melted with coil 6 to form melt zone 9, and Si single crystal 10 is grown as rod 5 is dropped. At this time, quartz rod 14 of high purity is put into through holes 11, 13 made in the central parts of rod 5 and support rod 12 so that lower end 14a of rod 14 is dipped in zone 9. The diameter of rod 14, the dropping rate of rod 5, etc. are suitably decided, and a predetermined vol. of oxygen is injected into growing single crystal 10 from rod 14.
COPYRIGHT: (C)1979,JPO&Japio
JP3365478A 1978-03-24 1978-03-24 Crystal growing mehtod Pending JPS54125190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3365478A JPS54125190A (en) 1978-03-24 1978-03-24 Crystal growing mehtod

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3365478A JPS54125190A (en) 1978-03-24 1978-03-24 Crystal growing mehtod

Publications (1)

Publication Number Publication Date
JPS54125190A true JPS54125190A (en) 1979-09-28

Family

ID=12392427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3365478A Pending JPS54125190A (en) 1978-03-24 1978-03-24 Crystal growing mehtod

Country Status (1)

Country Link
JP (1) JPS54125190A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59102891A (en) * 1982-11-30 1984-06-14 Shin Etsu Handotai Co Ltd Preparation of silicon single crystal
JPH03177388A (en) * 1989-11-24 1991-08-01 Wacker Chemitronic Ges Elektron Grundstoffe Mbh Method and device for manufacture of silicate ingot of high oxygen content by zone tensile process devoid of crucible

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59102891A (en) * 1982-11-30 1984-06-14 Shin Etsu Handotai Co Ltd Preparation of silicon single crystal
JPH03177388A (en) * 1989-11-24 1991-08-01 Wacker Chemitronic Ges Elektron Grundstoffe Mbh Method and device for manufacture of silicate ingot of high oxygen content by zone tensile process devoid of crucible

Similar Documents

Publication Publication Date Title
JPS54125190A (en) Crystal growing mehtod
JPS5688896A (en) Growth of single crystal
JPS5567596A (en) Single crystal growing method
JPS5547300A (en) Crystal pulling device
JPS55126597A (en) Single crystal growing method
JPS5777098A (en) Method and apparatus for growing znse in liquid phase
JPS5560092A (en) Production of single crystal
JPS57118086A (en) Manufacture of single crystal
JPS6136192A (en) Crucible for producing single crystal
JPS5659693A (en) Beltlike crystal manufacturing apparatus
JPS5836997A (en) Producing device for single crystal
JPS6479090A (en) Method for stabilizing growth of semiconductor single crystal
JPH02167883A (en) Production of single crystal of compound semiconductor and device therefor
JPS56149399A (en) Liquid phase epitaxial growing method
JPS55126596A (en) Production of single crystal
JPS54141389A (en) Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
JPS55140792A (en) Manufacture of 3-5 group compound semiconductor single crystal
JPS55140800A (en) Crucible for crystal growing crucible device
JPS6437486A (en) Crucible for crystal growth
KR950018696A (en) Monocrystalline manufacturing method and apparatus used therefor
JPS56100195A (en) Growing method for semiconductor single crystal
JPS5738397A (en) Apparatus and method for growing crystal
JPS5562893A (en) Single crystal growth observing device
JP2020158362A (en) SEED CRYSTAL FOR FeGa SINGLE CRYSTAL GROWTH, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING FeGa SINGLE CRYSTAL
MARSHALL et al. Technique for the growth of compositionally ungraded single crystals of solid solutions(Patent)