JPS6418985A - Production of oxide single crystal - Google Patents

Production of oxide single crystal

Info

Publication number
JPS6418985A
JPS6418985A JP17517387A JP17517387A JPS6418985A JP S6418985 A JPS6418985 A JP S6418985A JP 17517387 A JP17517387 A JP 17517387A JP 17517387 A JP17517387 A JP 17517387A JP S6418985 A JPS6418985 A JP S6418985A
Authority
JP
Japan
Prior art keywords
continuous
single crystal
polycrystal
crystal
converted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17517387A
Other languages
Japanese (ja)
Inventor
Takeshi Hirota
Mitsuo Satomi
Koichi Kugimiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17517387A priority Critical patent/JPS6418985A/en
Publication of JPS6418985A publication Critical patent/JPS6418985A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To produce an oxide continuous single crystal of a modified cross section, by forming a crystal nucleus in a part of a continuous polycrystal to be converted into a single crystal and allowing it to move relatively through a heating zone having a proper temperature gradient and distribution. CONSTITUTION:Al2O3 is combined with an appropriate amount of B2O3 to form a continuous polycrystal sintered product of prescribed dimensions, and the end part of the continuous body is heated with a laser beam over Tc, the temperature at which abnormal grains start to grow, to form a nucleus of crystal growth. The continuous polycrystal is heated in a range from its Tc to the melting point to convert the polycrystal part 4 into the single crystal part 5, as the part 4 is kept at a temperature lower than Tc. The part 5 is allowed to moved from the one to the other, just as in the floating zone, thereby the whole parts of the continuous polycrystal is converted into a continuous single crystal at an increased speed with improved productivity.
JP17517387A 1987-07-14 1987-07-14 Production of oxide single crystal Pending JPS6418985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17517387A JPS6418985A (en) 1987-07-14 1987-07-14 Production of oxide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17517387A JPS6418985A (en) 1987-07-14 1987-07-14 Production of oxide single crystal

Publications (1)

Publication Number Publication Date
JPS6418985A true JPS6418985A (en) 1989-01-23

Family

ID=15991545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17517387A Pending JPS6418985A (en) 1987-07-14 1987-07-14 Production of oxide single crystal

Country Status (1)

Country Link
JP (1) JPS6418985A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591023A (en) * 1995-10-10 1997-01-07 Hitachi Metals, Ltd. Rotary type compressor
EP1004690A1 (en) * 1998-11-27 2000-05-31 General Electric Company Single crystal conversion control
US7127980B2 (en) 2003-05-21 2006-10-31 Aisin Seiki Kabushiki Kaisha Vane, valve timing control device, and sliding member

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591023A (en) * 1995-10-10 1997-01-07 Hitachi Metals, Ltd. Rotary type compressor
EP1004690A1 (en) * 1998-11-27 2000-05-31 General Electric Company Single crystal conversion control
JP2000256089A (en) * 1998-11-27 2000-09-19 General Electric Co <Ge> Method of transformation to single crystal
KR100789005B1 (en) * 1998-11-27 2007-12-26 제너럴 일렉트릭 캄파니 Single crystal conversion control
US7127980B2 (en) 2003-05-21 2006-10-31 Aisin Seiki Kabushiki Kaisha Vane, valve timing control device, and sliding member

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